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    • 8. 发明授权
    • Data input unit of synchronous semiconductor memory device, and data input method using the same
    • 同步半导体存储器件的数据输入单元及其数据输入方法
    • US07016256B2
    • 2006-03-21
    • US10734804
    • 2003-12-12
    • Young Jin YoonSeung Min LeeSi Hong Kim
    • Young Jin YoonSeung Min LeeSi Hong Kim
    • G11C8/00
    • G11C7/1087G11C7/1078G11C7/1093G11C2207/107
    • Provided is a data input unit of a synchronous semiconductor memory device comprising: means for generating a rising edge signal and a falling edge signal at a rising edge and a falling edge of a data strobe signal DQS to be input; means for generating a second falling edge signal whenever two falling edge signals are generated in response to the data strobe signal; a data transforming means for dividing input data into four and latching the four divided data in response to the rising edge signal and falling edge signal, and then latching again the four divided data in response to the second falling edge signal; and a global input/output signal generator for transmitting the data from the data transforming means to a global input/output line in response to a strobe clock.
    • 提供了一种同步半导体存储器件的数据输入单元,包括:用于在要输入的数据选通信号DQS的上升沿和下降沿产生上升沿信号和下降沿信号的装置; 用于响应数据选通信号产生两个下降沿信号时产生第二下降沿信号的装置; 数据变换装置,用于将输入数据分成四个,并响应于上升沿信号和下降沿信号锁存四个划分的数据,然后响应于第二下降沿信号再次锁存四个划分的数据; 以及全局输入/输出信号发生器,用于响应于选通时钟将数据从数据变换装置发送到全局输入/输出线。
    • 9. 发明授权
    • DDR SDRAM for stable read operation
    • DDR SDRAM用于稳定的读取操作
    • US06504774B2
    • 2003-01-07
    • US09742815
    • 2000-12-19
    • Young-Jin YoonKwan-Weon Kim
    • Young-Jin YoonKwan-Weon Kim
    • G11C1300
    • G11C7/1066G11C7/1048G11C11/4076G11C11/4096
    • A synchronous memory device which comprises global I/O lines for data input and output from and to a memory core and a pipeline latch circuit for latching data from the global I/O lines. The synchronous memory device includes a circuit that precharges the global I/O lines when a read command signal interrupts a write operation signal, and disables the pipeline latch circuit in order to prevent write data on the global I/O lines from being latched in the pipeline latch circuit. Accordingly, the write data is prevented from being transferred to the pipeline latch circuit at an early stage of the read operation.
    • 一种同步存储器件,其包括用于数据输入和从存储器核心输出的全局I / O线以及用于锁存来自全局I / O线的数据的流水线锁存电路。 同步存储装置包括当读命令信号中断写操作信号时预充电全局I / O线的电路,并且禁止流水线锁存电路以防止全局I / O线上的写数据被锁存在 流水线锁存电路。 因此,在读取操作的早期阶段,防止写入数据被传送到流水线锁存电路。
    • 10. 发明授权
    • Method for coating using film coating apparatus
    • 使用薄膜涂布装置涂布的方法
    • US07462374B2
    • 2008-12-09
    • US10949210
    • 2004-09-27
    • Dae Kyu ParkKyoung Duck KimYoung Jin Yoon
    • Dae Kyu ParkKyoung Duck KimYoung Jin Yoon
    • B05D3/12B05B17/00B05B13/02
    • B05C5/027B05C5/0208B05C5/0241B05C5/0254B05C5/0258B05C11/1021B05C11/1023
    • A coating method includes rotatably supporting both ends of the piston or product to be coated; injecting coating material to a first parts of the piston or product to be coated through a first nozzle while rotating the piston, and simultaneously spreading to a uniform film thickness the coating material applied to the first part of the piston or product to be coated thereby removing excess coating material; fixedly supporting both ends of the piston or product to be coated; injecting coating material to a second pad of the piston or product to be coated through a second nozzle while sliding the second nozzle in an axial direction of the piston or product to be coated, and simultaneously spreading to a uniform film thickness the coating material applied to the second part of the piston or product to be coated thereby removing excess coating material.
    • 涂覆方法包括可旋转地支撑要被涂覆的活塞或产品的两端; 在旋转活塞的同时,通过第一喷嘴将涂料注入到要被涂覆的活塞或产品的第一部分上,同时将涂覆材料施加到待涂覆的活塞或产品的第一部分上,从而除去 过量涂料; 固定地支撑要被涂覆的活塞或产品的两端; 将喷涂材料注入活塞的第二垫或通过第二喷嘴进行涂覆的产品,同时沿着要被涂覆的活塞或产品的轴向方向滑动第二喷嘴,同时将涂覆材料涂覆到均匀的膜厚度 活塞或产品的第二部分被涂覆,从而去除多余的涂层材料。