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1. 发明授权

US09048430B2 Non-halogenated etchant and method of manufacturing a display substrate using the non-halogenated etchant 有权
标题翻译：非卤化蚀刻剂和使用非卤化蚀刻剂制造显示衬底的方法
公开(公告)号：US09048430B2
公开(公告)日：2015-06-02
申请号：US13330657
申请日：2011-12-19
申请人： Seon-Il Kim , Shin-Il Choi , Ji-Young Park , Sang-Gab Kim , O-Byoung Kwon , Dong-Ki Kim , Sang-Tae Kim , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Min-Ki Lim , Sang-Hoon Jang , Young-Jun Jin
发明人： Seon-Il Kim , Shin-Il Choi , Ji-Young Park , Sang-Gab Kim , O-Byoung Kwon , Dong-Ki Kim , Sang-Tae Kim , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Min-Ki Lim , Sang-Hoon Jang , Young-Jun Jin
IPC分类号： H01L21/00 , H01L51/00
CPC分类号： H01L51/0023 , H01L2251/308
摘要： Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water.
摘要翻译：本发明的示例性实施方案公开了用于蚀刻氧化铟层的非卤化蚀刻剂和使用非卤化蚀刻剂制造显示衬底的方法，非卤化蚀刻剂包括硝酸，硫酸，包括铵的腐蚀抑制剂，环胺类化合物和水。

2. 发明申请

US20100120209A1 ETCHANT COMPOSITION, AND METHOD OF FABRICATING METAL PATTERN AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：蚀刻组合物，以及使用其制造金属图案和薄膜晶体管阵列板的方法
公开(公告)号：US20100120209A1
公开(公告)日：2010-05-13
申请号：US12432437
申请日：2009-04-29
申请人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
发明人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
IPC分类号： H01L21/336 , C09K13/06 , G03F7/20
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/18 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
摘要翻译：提供蚀刻剂组合物。蚀刻剂组合物包括约40至约65重量％的磷酸，约2至约5重量％的硝酸，约2至约20重量％的乙酸，约0.1至约2重量％的含磷酸盐的化合物，约0.1至约2重量％的同时含有氨基和羧基的化合物，以及组合物总重量的剩余重量百分数。

3. 发明授权

US5953617A Method for manufacturing optoelectronic integrated circuits 失效
标题翻译：制造光电集成电路的方法
公开(公告)号：US5953617A
公开(公告)日：1999-09-14
申请号：US951870
申请日：1997-10-17
申请人： Joon-Woo Lee
发明人： Joon-Woo Lee
IPC分类号： H01L27/14 , H01L21/331 , H01L27/15 , H01L27/30 , H01L29/205 , H01L29/73 , H01L29/737 , H01L31/00 , H01L31/10 , H01L31/18 , H01L21/70
CPC分类号： H01L31/1804 , H01L27/305 , H01L27/15 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing an optoelectronic integrated circuit including a photo diode for transforming light into electric signals, an HBT for amplifying said electric signals from said photo diode, a capacitor, and a resistor is disclosed. An HBT including an emitter, a base, and a collector on a predetermined location of a semiconductor substrate, and a photo diode including an N type metal, non doped layer, and a P type metal are formed. A lower electrode of a capacitor is formed on the semiconductor substrate located in a place separated by a predetermined space from said photo diode. A SiN film is deposited over the surface of the resulting structure of the semiconductor substrate. The above described SiN film is patterned to exist only on the surfaces of the HBT, photo diode, lower electrode, and semiconductor substrate separated from the lower electrode by a predetermined space. Furthermore, a resistor is formed on the SiN film existing on a predetermined surface of the semiconductor substrate.
摘要翻译：公开了一种制造光电集成电路的方法，该光电集成电路包括用于将光转换成电信号的光电二极管，用于放大来自所述光电二极管的电信号的HBT，电容器和电阻器。形成包括在半导体衬底的预定位置上的发射极，基极和集电极的HBT以及包括N型金属，非掺杂层和P型金属的光电二极管。电容器的下电极形成在位于与所述光电二极管隔开预定空间的位置的半导体衬底上。在半导体衬底的所得结构的表面上沉积SiN膜。上述SiN膜被图案化，仅存在于与下电极分离预定空间的HBT，光电二极管，下电极和半导体衬底的表面上。此外，在存在于半导体基板的预定表面上的SiN膜上形成电阻器。

4. 发明授权

US08409999B2 Etching composition for etching a transparent electrode 有权
标题翻译：用于蚀刻透明电极的蚀刻组合物
公开(公告)号：US08409999B2
公开(公告)日：2013-04-02
申请号：US12947296
申请日：2010-11-16
申请人： Byeong-Jin Lee , Hong-Sick Park , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Suck-Jun Lee , Seung-Jae Yang , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Hye-Ra Shin , Yu-Jin Lee
发明人： Byeong-Jin Lee , Hong-Sick Park , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Suck-Jun Lee , Seung-Jae Yang , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Hye-Ra Shin , Yu-Jin Lee
IPC分类号： H01L21/461
CPC分类号： H01L29/401 , C09K13/06 , H01L27/124 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.
摘要翻译：提供了用于蚀刻透明电极的蚀刻剂组合物，蚀刻剂组合物包括无机酸，含铵（NH 4 +）的化合物，环胺化合物和剩余量的水。

5. 发明申请

US20110183476A1 ETCHING SOLUTION COMPOSITION AND METHOD OF ETCHING USING THE SAME 有权
标题翻译：蚀刻溶液组合物和使用其蚀刻的方法
公开(公告)号：US20110183476A1
公开(公告)日：2011-07-28
申请号：US12947296
申请日：2010-11-16
申请人： Byeong-Jin LEE , Hong-Sick Park , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Suck-Jun Lee , Seung-Jae Yang , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Hye-Ra Shin , Yu-Jin Lee
发明人： Byeong-Jin LEE , Hong-Sick Park , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Suck-Jun Lee , Seung-Jae Yang , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Hye-Ra Shin , Yu-Jin Lee
IPC分类号： H01L21/336 , C09K13/06 , H01B13/00
CPC分类号： H01L29/401 , C09K13/06 , H01L27/124 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH4+)-containing compound, a cyclic amine compound, and the remaining amount of water.
摘要翻译：提供了用于蚀刻透明电极的蚀刻剂组合物，蚀刻剂组合物包括无机酸，含铵（NH 4 +）的化合物，环胺化合物和剩余量的水。

6. 发明授权

US07968000B2 Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same 有权
标题翻译：蚀刻剂组合物，以及使用其制造金属图案和薄膜晶体管阵列面板的方法
公开(公告)号：US07968000B2
公开(公告)日：2011-06-28
申请号：US12432437
申请日：2009-04-29
申请人： Young-Joo Choi , Bong-Kyun Kim , Byeong-Jin Lee , Jong-Hyun Choung , Sun-Young Hong , Nam-Seok Suh , Hong-Sick Park , Ky-Sub Kim , Seung-Yong Lee , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Seung-Jae Yang , Hyun-Kyu Lee , Sang-Hoon Jang , Min-Ki Lim
发明人： Young-Joo Choi , Bong-Kyun Kim , Byeong-Jin Lee , Jong-Hyun Choung , Sun-Young Hong , Nam-Seok Suh , Hong-Sick Park , Ky-Sub Kim , Seung-Yong Lee , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Seung-Jae Yang , Hyun-Kyu Lee , Sang-Hoon Jang , Min-Ki Lim
IPC分类号： C09K13/00 , C03C15/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/18 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
摘要翻译：提供蚀刻剂组合物。蚀刻剂组合物包括约40至约65重量％的磷酸，约2至约5重量％的硝酸，约2至约20重量％的乙酸，约0.1至约2重量％的含磷酸盐的化合物，约0.1至约2重量％的同时含有氨基和羧基的化合物，以及组合物总重量的剩余重量百分数。

7. 发明申请

US20060043332A1 Etchant composition for indium oxide layer and etching method using the same 有权
标题翻译：用于氧化铟层的蚀刻剂组合物和使用其的蚀刻方法
公开(公告)号：US20060043332A1
公开(公告)日：2006-03-02
申请号：US11208545
申请日：2005-08-23
申请人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
发明人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
IPC分类号： C09K13/06
CPC分类号： C09K13/06
摘要： An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
摘要翻译：用于除去氧化铟层的蚀刻剂包括硫酸作为主要氧化剂，辅助氧化剂如H 3 PO 4，HNO 3， CH 3 COOH，HClO 4，H 2 O 2，以及通过将钾过硫酸氢盐（2KHSO 5），硫酸氢钾（KHSO 4）和硫酸钾（K 2 SO 4）一起以5：3：2的比例，包含铵基材料的蚀刻抑制剂和水。蚀刻剂可以去除铟氧化物层的期望部分，而不损害光致抗蚀剂图案或氧化铟层下面的层。

8. 发明申请

US20120208310A1 NON-HALOGENATED ETCHANT AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE NON-HALOGENATED ETCHANT 有权
标题翻译：非对位蚀刻剂和使用非底物蚀刻剂制造显示基板的方法
公开(公告)号：US20120208310A1
公开(公告)日：2012-08-16
申请号：US13330657
申请日：2011-12-19
申请人： Seon-Il KIM , Shin-Il Choi , Ji-Young Park , Sang-Gab Kim , O-Byoung Kwon , Dong-Ki Kim , Sang-Tae Kim , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Min-Ki Lim , Sang-Hoon Jang , Young-Jun JIN
发明人： Seon-Il KIM , Shin-Il Choi , Ji-Young Park , Sang-Gab Kim , O-Byoung Kwon , Dong-Ki Kim , Sang-Tae Kim , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Min-Ki Lim , Sang-Hoon Jang , Young-Jun JIN
IPC分类号： H01L33/08
CPC分类号： H01L51/0023 , H01L2251/308
摘要： Exemplary embodiments of the present invention disclose a non-halogenated etchant for etching an indium oxide layer and a method of manufacturing a display substrate using the non-halogenated etchant, the non-halogenated etchant including nitric acid, sulfuric acid, a corrosion inhibitor including ammonium, a cyclic amine-based compound, and water.
摘要翻译：本发明的示例性实施方案公开了用于蚀刻氧化铟层的非卤化蚀刻剂和使用非卤化蚀刻剂制造显示衬底的方法，非卤化蚀刻剂包括硝酸，硫酸，包括铵的腐蚀抑制剂，环胺类化合物和水。

9. 发明授权

US08785935B2 Etchant, display device and method for manufacturing display device using the same 有权
标题翻译：蚀刻剂，显示装置及使用其的显示装置的制造方法
公开(公告)号：US08785935B2
公开(公告)日：2014-07-22
申请号：US13168408
申请日：2011-06-24
申请人： Hong-Sick Park , Wang-Woo Lee , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Young-Jin Yoon , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Dong-Ki Kim
发明人： Hong-Sick Park , Wang-Woo Lee , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Young-Jin Yoon , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Dong-Ki Kim
IPC分类号： H01L29/04 , H01L27/12
CPC分类号： H01L27/127 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/41733
摘要： An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.
摘要翻译：蚀刻剂包括：5〜20重量％的过硫酸盐，1〜10重量％的至少一种无机酸化合物，无机酸盐或其混合物，0.3〜5重量％的环状胺化合物，1〜 10重量％的至少一种有机酸化合物，有机酸盐或其混合物，0.1至5重量％的对甲苯磺酸和水，基于蚀刻剂的总重量。另外，铜 - 钛蚀刻剂还含有0.01〜2重量％的含氟化合物。还公开了使用蚀刻剂形成显示装置的方法和显示装置。

10. 发明申请

US20120252148A1 ECHTANT AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME 有权
标题翻译：用于制造使用该显示装置的显示装置的方法和方法
公开(公告)号：US20120252148A1
公开(公告)日：2012-10-04
申请号：US13223958
申请日：2011-09-01
申请人： Ji-Young PARK , Shin-Il CHOI , Jong-Hyun CHOUNG , Sang Gab KIM , Seon-Il KIM , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Yu-Jin LEE
发明人： Ji-Young PARK , Shin-Il CHOI , Jong-Hyun CHOUNG , Sang Gab KIM , Seon-Il KIM , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Yu-Jin LEE
IPC分类号： H01L33/36 , C09K13/08
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/32134 , H01L27/1259 , H01L29/41733
摘要： An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.
摘要翻译：根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％％的有机酸或有机酸盐，和水。

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