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1. 发明申请

US20150162167A1 MICROWAVE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：微波等离子体加工设备
公开(公告)号：US20150162167A1
公开(公告)日：2015-06-11
申请号：US14622236
申请日：2015-02-13
申请人： Jin Hyuk CHOI , Sang Chul HAN , Jong Il KEE , Young-Dong LEE , Guen Suk LEE , Seung Hun OH
发明人： Jin Hyuk CHOI , Sang Chul HAN , Jong Il KEE , Young-Dong LEE , Guen Suk LEE , Seung Hun OH
IPC分类号： H01J37/32 , C23C16/511
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括：腔室，其构造成能够等离子体处理，腔室上的上板，上板下的天线，天线被配置为在腔室中产生等离子体; 上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

2. 发明授权

US08039772B2 Microwave resonance plasma generating apparatus and plasma processing system having the same 有权
标题翻译：微波共振等离子体发生装置及其等离子体处理系统
公开(公告)号：US08039772B2
公开(公告)日：2011-10-18
申请号：US11492122
申请日：2006-07-25
申请人： Young-dong Lee , Igor Antonovich Kossyi , Mamikon Aramovich Misakyan , Merab Ivanovich Taktakishvili
发明人： Young-dong Lee , Igor Antonovich Kossyi , Mamikon Aramovich Misakyan , Merab Ivanovich Taktakishvili
IPC分类号： B23K10/00
CPC分类号： H01J37/32229 , H01J37/32192
摘要： A microwave resonance plasma generating apparatus, a plasma processing system having the same and a method of generating a microwave resonance plasma are provided. The apparatus includes a microwave generating unit which generates a microwave, and a plasma producing unit which produces electrons and photons of high energy using the microwave generated from the microwave generating unit. The plasma producing unit includes a coaxial waveguide having an inner electrode disposed adjacent to the microwave generating unit, an outer electrode connected to the microwave generating unit and disposed to coaxially surround a portion of the inner electrode, the outer electrode being shorter than the inner electrode, and a dielectric tube disposed between the inner electrode and the outer electrode to insulate between the inner electrode and the outer electrode. The coaxial waveguide utilizes a principle of “cut or truncated electrode of coaxial waveguide” and a resonance phenomenon of Langmiur.
摘要翻译：提供微波共振等离子体生成装置，具有该等离子体处理系统的等离子体处理系统和产生微波共振等离子体的方法。该装置包括产生微波的微波产生单元和使用从微波产生单元产生的微波产生高能量的电子和光子的等离子体产生单元。等离子体生成单元包括具有与微波发生单元相邻设置的内部电极的同轴波导，外部电极，其与微波发生单元连接并且设置成同轴地围绕内部电极的一部分，外部电极比内部电极短以及设置在内部电极和外部电极之间以在内部电极和外部电极之间绝缘的电介质管。同轴波导采用“同轴波导的切割或截短电极”和Langmiur共振现象的原理。

3. 发明申请

US20060170344A1 Light emitting device using plasma discharge 失效
公开(公告)号：US20060170344A1
公开(公告)日：2006-08-03
申请号：US11179727
申请日：2005-07-13
申请人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
发明人： Young-dong Lee , Hidekazu Hatanaka , Seung-hyun Son , Jai-kwang Shin , Young-mo Kim
IPC分类号： H01J17/49
CPC分类号： H01J11/40 , H01J11/12 , H01J11/28 , H01J11/38 , H01J61/54
摘要： A plasma-discharge light emitting device is provided. The plasma-discharge light emitting device may include: rear and front panels separated from each other in a predetermined interval, wherein at least one discharge cell may be provided between the rear and front panels, and wherein plasma discharge may be generated in the discharge cells; a pair of discharge electrodes provided on at least one of the rear and front panels for each of the discharge cells; a trench provided as a portion of each of the discharge cells between the pair of the discharge electrodes; and electron-emitting material layers provided on both sidewalls of the trench.

4. 发明申请

US20080289576A1 Plasma based ion implantation system 审中-公开
标题翻译：等离子体离子注入系统
公开(公告)号：US20080289576A1
公开(公告)日：2008-11-27
申请号：US12153703
申请日：2008-05-22
申请人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
发明人： Young dong Lee , Yuri Tolmachev , Vladimir Volynets , Vasily Pashkovskiy , Andrey Ushakov , Gyeong Su Keum , Jae Hyun Han , Dong Cheol Kim , Hyung Chul Cho
IPC分类号： C23C16/44
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/32412 , H01J37/3244 , H01J37/3255 , H01J37/32862 , H01L21/2236
摘要： A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece.
摘要翻译：一种等离子体离子注入系统，其能够产生具有用于离子注入的有利特性的电容耦合等离子体，包括仅为离子注入工艺产生必需的离子和自由基，而不是产生电感耦合等离子体，其产生不必要的离子并过度离解激进分子基于等离子体的离子注入系统容易地通过清洁真空室来控制植入的等离子体离子，从而最小化不必要的沉积和污染物的出现的问题，并且通过减少聚合物层在工件上的沉积而增加仅用于等离子体离子注入的组分的数量。基于等离子体的离子注入系统通过使用平面型电极容易地控制等离子体的均匀性，从而容易地确保注入到工件中的等离子体离子的均匀性。

5. 发明申请

US20060076880A1 Flat lamp 审中-公开
标题翻译：平板灯
公开(公告)号：US20060076880A1
公开(公告)日：2006-04-13
申请号：US11200097
申请日：2005-08-10
申请人： Hyoung-bin Park , Young-dong Lee , Gi-young Kim , Seung-hyun Son , Young-mo Kim , Seong-eui Lee , Sang-hun Jang
发明人： Hyoung-bin Park , Young-dong Lee , Gi-young Kim , Seung-hyun Son , Young-mo Kim , Seong-eui Lee , Sang-hun Jang
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J61/305 , H01J61/06
摘要： Provided is a flat lamp that includes: an upper substrate and a lower substrate arranged to face each other and separated by a predetermined distance, with at least one discharge cell formed between the upper and lower substrates; and at least one pair of a first electrode portion and a second electrode portion formed on at least one of the upper and lower substrates, wherein one pair corresponds to one discharge cell, and the first electrode portion is composed of an electrode and the second electrode portion is composed of a plurality of electrodes.
摘要翻译：本发明提供一种扁平灯，包括：上基板和下基板，被布置为彼此面对并分隔预定距离，至少一个放电单元形成在上基板和下基板之间; 以及形成在所述上基板和所述下基板中的至少一个上的至少一对第一电极部分和第二电极部分，其中一对对应于一个放电单元，并且所述第一电极部分由电极和所述第二电极部分由多个电极组成。

6. 发明授权

US09312124B2 Methods of fabricating gate insulating layers in gate trenches and methods of fabricating semiconductor devices including the same 有权
标题翻译：在栅极沟槽中制造栅极绝缘层的方法以及制造包括其的半导体器件的方法
公开(公告)号：US09312124B2
公开(公告)日：2016-04-12
申请号：US13605463
申请日：2012-09-06
申请人： Tai-Su Park , Gun-Joong Lee , Young-Dong Lee , Sang-Chul Han , Joo-Byoung Yoon
发明人： Tai-Su Park , Gun-Joong Lee , Young-Dong Lee , Sang-Chul Han , Joo-Byoung Yoon
IPC分类号： H01L21/02 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L29/42356 , H01L29/4966 , H01L29/78
摘要： A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.
摘要翻译：制造半导体器件的方法可以包括：在衬底中形成限定有源区的场区; 形成栅极沟槽，其中所述有源场区域和所述场区域部分地暴露; 在有源区的表面上形成栅极绝缘层; 在栅极绝缘层和部分曝光的场区域上保形地形成包括金属的栅极阻挡层; 在栅极阻挡层上形成包含金属的栅电极层; 和/或形成栅极覆盖层。形成栅极绝缘层可以包括通过主要氧化有源区的表面形成第一栅极氧化层，并且通过二次氧化活性区的表面在有源区的表面和第一栅极氧化物层之间形成第二栅极氧化物层。栅极覆盖层可以与栅极绝缘层，栅极势垒层和/或栅极电极层接触。

7. 发明申请

US20130171801A1 SEMICONDUCTOR DEVICES HAVING NITRIDED GATE INSULATING LAYER AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有氮化物绝缘层的半导体器件及其制造方法
公开(公告)号：US20130171801A1
公开(公告)日：2013-07-04
申请号：US13604352
申请日：2012-09-05
申请人： Tai-Su PARK , Jin-Hyuk CHOI , Sang-Chul HAN , Jung-Sup OH , Young-Dong LEE
发明人： Tai-Su PARK , Jin-Hyuk CHOI , Sang-Chul HAN , Jung-Sup OH , Young-Dong LEE
IPC分类号： H01L21/28 , H01L21/314
CPC分类号： C23C16/34 , C23C28/04 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L29/0657 , H01L29/42356 , H01L29/518 , H01L29/66621
摘要： Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.
摘要翻译：半导体器件及其制造方法包括在衬底中形成器件隔离区域以限定有源区域，在衬底中形成栅极沟槽以暴露有源区域和器件隔离区域，以共形形成包括氧化硅在内的初步栅极绝缘层在栅极沟槽中暴露的有源区域，使用频率约13.56MHz，功率在约100W至约300W之间的射频偏压来对初级栅极绝缘层进行氮化，以形成氮化预备栅极绝缘层，其包括氮氧化硅，在氮化物预选绝缘层上形成栅电极材料层，部分去除氮化预栅极绝缘层和栅电极材料层，分别形成栅极绝缘层和栅极电极层，并在栅极上形成栅极覆盖层电极层填充栅极沟槽。

8. 发明申请

US20130164919A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING GATE INSULATING LAYERS 有权
标题翻译：制造半导体器件的方法和制造绝缘栅绝缘层的方法
公开(公告)号：US20130164919A1
公开(公告)日：2013-06-27
申请号：US13605463
申请日：2012-09-06
申请人： Tai-Su PARK , Gun-Joong LEE , Young-Dong LEE , Sang-Chul HAN , Joo-Byoung YOON
发明人： Tai-Su PARK , Gun-Joong LEE , Young-Dong LEE , Sang-Chul HAN , Joo-Byoung YOON
IPC分类号： H01L21/31 , H01L21/20
CPC分类号： H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L29/42356 , H01L29/4966 , H01L29/78
摘要： A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench.
摘要翻译：制造半导体器件的方法可以包括在衬底中形成有源和场区域; 形成其中所述有源和场区域被暴露的栅极沟槽; 在所述暴露的有源区的表面上形成栅极绝缘层，其中形成所述栅极绝缘层包括通过主要氧化所述有源区的表面形成第一栅极氧化物层，以及在所述有源区的表面之间形成第二栅极氧化物层区域和第一栅氧化层，通过二次氧化有源区的表面; 在所述栅极绝缘层和所述曝光场区域上保形地形成栅极阻挡层; 在栅极阻挡层上形成栅极电极层; 以及形成与栅极沟槽中的栅极绝缘层，栅极阻挡层和栅电极层接触的栅极覆盖层。

9. 发明授权

US08980047B2 Microwave plasma processing apparatus 有权
标题翻译：微波等离子体处理装置
公开(公告)号：US08980047B2
公开(公告)日：2015-03-17
申请号：US13174938
申请日：2011-07-01
申请人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
发明人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01J37/32
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体，上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

10. 发明申请

US20120000610A1 Microwave Plasma Processing Apparatus 有权
标题翻译：微波等离子体处理设备
公开(公告)号：US20120000610A1
公开(公告)日：2012-01-05
申请号：US13174938
申请日：2011-07-01
申请人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
发明人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
IPC分类号： C23F1/08 , H01L21/00 , C23C16/46 , H01L21/3065 , C23C16/50 , C23C16/458
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体，上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

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