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1. 发明申请

US20070017446A1 Apparatus to treat a substrate 有权
标题翻译：用于处理基材的装置
公开(公告)号：US20070017446A1
公开(公告)日：2007-01-25
申请号：US11417043
申请日：2006-05-04
申请人： Sang-jean Jeon , Jong-rok Park , Sung-yeup Sa , Hee-jeon Yang , Guen-suk Lee
发明人： Sang-jean Jeon , Jong-rok Park , Sung-yeup Sa , Hee-jeon Yang , Guen-suk Lee
IPC分类号： C23F1/00 , C23C16/00 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/3266
摘要： An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.
摘要翻译：处理基板的装置包括处理室，其包括反应空间，其中放置待处理的基板和形成等离子体;铁氧体磁芯，其具有设置在反应空间外侧的多个极和面向反应空间的连接器多个极并且将多个极彼此连接，围绕多个极的线圈绕组，以及向线圈供电的电力单元。

2. 发明授权

US08980047B2 Microwave plasma processing apparatus 有权
标题翻译：微波等离子体处理装置
公开(公告)号：US08980047B2
公开(公告)日：2015-03-17
申请号：US13174938
申请日：2011-07-01
申请人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
发明人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01J37/32
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体，上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

3. 发明申请

US20120000610A1 Microwave Plasma Processing Apparatus 有权
标题翻译：微波等离子体处理设备
公开(公告)号：US20120000610A1
公开(公告)日：2012-01-05
申请号：US13174938
申请日：2011-07-01
申请人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
发明人： Jin Hyuk Choi , Sang Chul Han , Jong Il Kee , Young dong Lee , Guen Suk Lee , Seung Hun Oh
IPC分类号： C23F1/08 , H01L21/00 , C23C16/46 , H01L21/3065 , C23C16/50 , C23C16/458
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括被配置为执行等离子体处理的室，室上的上板，在上板下的天线，天线被配置为在室中产生等离子体，上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

4. 发明申请

US20080017317A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20080017317A1
公开(公告)日：2008-01-24
申请号：US11735549
申请日：2007-04-16
申请人： Sang Jean JEON , Chin Wook Chung , Guen Suk Lee , Seung Yuop Sa , Hyung Chul Cho
发明人： Sang Jean JEON , Chin Wook Chung , Guen Suk Lee , Seung Yuop Sa , Hyung Chul Cho
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/507 , H01J37/321 , H05H1/46
摘要： A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.
摘要翻译：基板处理装置。基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。

5. 发明申请

US20150162167A1 MICROWAVE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：微波等离子体加工设备
公开(公告)号：US20150162167A1
公开(公告)日：2015-06-11
申请号：US14622236
申请日：2015-02-13
申请人： Jin Hyuk CHOI , Sang Chul HAN , Jong Il KEE , Young-Dong LEE , Guen Suk LEE , Seung Hun OH
发明人： Jin Hyuk CHOI , Sang Chul HAN , Jong Il KEE , Young-Dong LEE , Guen Suk LEE , Seung Hun OH
IPC分类号： H01J37/32 , C23C16/511
CPC分类号： H01J37/3222 , C23C16/511 , H01L21/67069
摘要： In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.
摘要翻译：根据示例性实施例，等离子体处理设备包括：腔室，其构造成能够等离子体处理，腔室上的上板，上板下的天线，天线被配置为在腔室中产生等离子体; 上板和天线和上绝缘体覆盖天线的顶部，覆盖天线的底部的下绝缘体，被配置为将天线固定到上板的天线支撑环和粘附到天线支撑环的金属垫片。

6. 发明授权

US08404080B2 Apparatus to treat a substrate 有权
标题翻译：用于处理基材的装置
公开(公告)号：US08404080B2
公开(公告)日：2013-03-26
申请号：US11417043
申请日：2006-05-04
申请人： Sang-jean Jeon , Jong-rok Park , Sung-yeup Sa , Hee-jeon Yang , Guen-suk Lee
发明人： Sang-jean Jeon , Jong-rok Park , Sung-yeup Sa , Hee-jeon Yang , Guen-suk Lee
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/3266
摘要： An apparatus to treat a substrate includes a processing chamber including a reaction space where a substrate to be treated is placed and a plasma is formed, a ferrite core having a plurality of poles disposed outside the reaction space and a connector facing the reaction space across the plurality of poles and connecting the plurality of the poles each other, a coil winding around the plurality of poles, and an electric power unit supplying electric power to the coil.
摘要翻译：处理基板的装置包括处理室，其包括反应空间，其中放置待处理的基板和形成等离子体;铁氧体磁芯，其具有设置在反应空间外侧的多个极和面向反应空间的连接器多个极并且将多个极彼此连接，围绕多个极的线圈绕组，以及向线圈供电的电力单元。

7. 发明授权

US08343309B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08343309B2
公开(公告)日：2013-01-01
申请号：US11735549
申请日：2007-04-16
申请人： Sang Jean Jeon , Chin Wook Chung , Guen Suk Lee , Seung Yuop Sa , Hyung Chul Cho
发明人： Sang Jean Jeon , Chin Wook Chung , Guen Suk Lee , Seung Yuop Sa , Hyung Chul Cho
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： C23C16/507 , H01J37/321 , H05H1/46
摘要： A substrate processing apparatus. The substrate processing apparatus includes a vacuum chamber having a reaction space to generate plasma in which a target substrate is located, a low frequency antenna unit located outside the reaction space to generate plasma in the reaction space, a low frequency power supply to apply low frequency power to the low frequency antenna unit, a high frequency antenna unit located outside the reaction space to generate plasma in the reaction space, and a high frequency power supply to apply high frequency power to the high frequency antenna unit. The apparatus allows the ignition of plasma to be performed efficiently via the high frequency antenna unit, and improves efficiency of inductive coupling between plasma and a low frequency antenna via the low frequency antenna unit, thereby improving plasma generation efficiency.
摘要翻译：基板处理装置。基板处理装置包括具有反应空间以产生目标基板的等离子体的真空室，位于反应空间外侧的低频天线单元，用于在反应空间中产生等离子体;低频电源，以施加低频低频天线单元的功率，位于反应空间外部的高频天线单元，以在反应空间中产生等离子体;以及高频电源，向高频天线单元施加高频功率。该装置允许通过高频天线单元有效地执行等离子体的点火，并且通过低频天线单元提高等离子体和低频天线之间的电感耦合的效率，从而提高等离子体产生效率。

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