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1. 发明授权

US08514134B2 MIMO antenna having parasitic elements 有权
标题翻译：具有寄生元件的MIMO天线
公开(公告)号：US08514134B2
公开(公告)日：2013-08-20
申请号：US13202589
申请日：2009-10-19
申请人： Chan Ho Kim , Jin Myung Kim , Chang-Gyu Choi , Gyoung Rok Beak , Young Hun Park , Heung Ju Ahn , Yeon Ho Yang
发明人： Chan Ho Kim , Jin Myung Kim , Chang-Gyu Choi , Gyoung Rok Beak , Young Hun Park , Heung Ju Ahn , Yeon Ho Yang
IPC分类号： H01Q1/38
CPC分类号： H01Q21/28 , H01Q1/243 , H01Q5/364 , H01Q5/385
摘要： A Multiple-Input Multiple-Output (MIMO) antenna having parasitic elements is provided. The MIMO antenna includes a plurality of antenna elements, a plurality of parasitic elements, and a bridge. The plurality of antenna elements is symmetrically disposed on one side surface of a board while maintaining a predetermined distance therebetween. The plurality of parasitic elements is disposed on the other side surface of the board in a one-to-one correspondence with the plurality of antenna elements. The bridge is formed of a metal pattern line, and is configured to connect the plurality of parasitic elements to each other.
摘要翻译：提供了具有寄生元件的多输入多输出（MIMO）天线。 MIMO天线包括多个天线元件，多个寄生元件和桥接器。多个天线元件对称地设置在板的一个侧表面上，同时保持其间的预定距离。所述多个寄生元件与所述多个天线元件一一对应地配置在所述基板的另一侧面上。桥由金属图案线形成，并且被配置为将多个寄生元件彼此连接。

2. 发明申请

US20110128186A1 PATCH ANTENNA 有权
标题翻译： PATCH天线
公开(公告)号：US20110128186A1
公开(公告)日：2011-06-02
申请号：US12823340
申请日：2010-06-25
申请人： Tae Inn Chung , Byoung-Nam Kim , Tae-Hwan Yoo , Young-Hun Park
发明人： Tae Inn Chung , Byoung-Nam Kim , Tae-Hwan Yoo , Young-Hun Park
IPC分类号： H01Q9/04
CPC分类号： H01Q9/0428 , H01Q1/243
摘要： The present invention relates to a technology for forming a patch antenna generating both linearly and circularly polarized waves at the same time, so as to reduce a propagation loss during transmission/receiving operations between a circularly polarized antenna and a linearly polarized antenna.
摘要翻译：本发明涉及同时产生线性和圆偏振波的贴片天线的形成技术，以减少圆极化天线与线极化天线之间的发送/接收操作期间的传播损耗。

3. 发明申请

US20080237461A1 Autofocus method in a scanning electron microscope 审中-公开
标题翻译：自动对焦法在扫描电子显微镜下
公开(公告)号：US20080237461A1
公开(公告)日：2008-10-02
申请号：US12079166
申请日：2008-03-25
申请人： Jong-Deok Kim , Byung-Am Lee , Kyung-Ho Kim , Byung-Seol Ahn , Young-Hun Park , Kong-Jung Sa
发明人： Jong-Deok Kim , Byung-Am Lee , Kyung-Ho Kim , Byung-Seol Ahn , Young-Hun Park , Kong-Jung Sa
IPC分类号： G21K7/00
CPC分类号： H01J37/21 , H01J37/222 , H01J37/28 , H01J2237/216
摘要： In an autofocus method, an electron beam is scanned onto a subject through a condensing member. A setting condition of the condensing member is changed within a first range. An image evaluation value is measured using a secondary electron current from the subject according to the setting condition within the first range. A second range adjacent to the first range and including the setting condition corresponding to the first maximum is set when a first maximum of the image evaluation value is not a peak value. The setting condition is changed within the second range. An image evaluation value is measured using a secondary electron current according to the setting condition within the second range. The condensing member is set with the setting condition corresponding to a second maximum of the image evaluation value when the second maximum value is the peak value.
摘要翻译：在自动聚焦方法中，电子束通过聚光部件被扫描到被摄体上。聚光部件的设定状态在第一范围内变化。根据第一范围内的设定条件，使用来自被检体的二次电子流测定图像评价值。当图像评估值的第一最大值不是峰值时，设置与第一范围相邻并且包括与第一最大值相对应的设置条件的第二范围。设定条件在第二范围内变化。根据第二范围内的设定条件，使用二次电子电流测定图像评价值。当第二最大值是峰值时，聚光构件被设置为与图像评估值的第二最大值相对应的设置条件。

4. 发明授权

US5488007A Method of manufacture of a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5488007A
公开(公告)日：1996-01-30
申请号：US42490
申请日：1993-04-16
申请人： Kyeong-Tae Kim , Yun-seung Shin , Young-hun Park , Won-mo Park , Ji-hong Ahn
发明人： Kyeong-Tae Kim , Yun-seung Shin , Young-hun Park , Won-mo Park , Ji-hong Ahn
IPC分类号： H01L21/3205 , H01L21/3105 , H01L21/768 , H01L21/8242 , H01L27/10 , H01L27/105 , H01L27/108 , H01L21/00
CPC分类号： H01L27/10808 , H01L21/31056 , H01L21/76819 , H01L27/105 , Y10S438/926
摘要： A method for manufacturing a semiconductor device having a closed step portion and a global step portion including an insulating layer is provided. A dummy pattern is formed by forming an insulating layer on the global step portion and then patterning through a photolithography process. After forming the dummy pattern for compensating steps in the global step portion and between the closed step portion and the global step portion, a BPSG layer is formed on both the closed step portion and the global step portion, and then the BPSG layer is heat-treated to cause it to reflow. The BPSG layer as an insulating interlayer having a planarized surface. The improved planarization decreases the occurrence of notching and discontinuities in the succeeding metallization processes thereby enhancing the yield and electrical characteristics of the semiconductor device.
摘要翻译：提供了一种制造具有封闭台阶部分和包括绝缘层的全局台阶部分的半导体器件的方法。通过在全局台阶部分上形成绝缘层，然后通过光刻工艺进行图案化，形成虚拟图案。在形成用于补偿全局台阶部分之间和闭合台阶部分与全局台阶部分之间的步骤的虚拟图案之后，在封闭台阶部分和全局台阶部分上形成BPSG层，然后BPSG层被热封，处理以使其回流。作为具有平坦化表面的绝缘中间层的BPSG层。改进的平面化减少了随后的金属化处理中的开槽和不连续的发生，从而提高了半导体器件的产量和电特性。

5. 发明授权

US08552920B2 Patch antenna synchronously generating linearly polarized wave and circularly polarized wave and generating method thereof 有权
标题翻译：贴片天线同步产生线偏振波和圆偏振波及其产生方法
公开(公告)号：US08552920B2
公开(公告)日：2013-10-08
申请号：US12954361
申请日：2010-11-24
申请人： Tae Inn Chung , Byung-Nam Kim , Tae-Hwan Yoo , Young-Hun Park
发明人： Tae Inn Chung , Byung-Nam Kim , Tae-Hwan Yoo , Young-Hun Park
IPC分类号： H01Q19/10
CPC分类号： H01Q9/0414 , H01Q9/0428 , H01Q9/0464
摘要： A patch antenna synchronously generating a circularly polarized wave and a linearly polarized wave comprises a first radiator radiating a circularly polarized wave with respect to an antenna signal, a first substrate provided at a part or the whole of the rear surface of the first radiator, a second radiator provided at a part or the whole of the rear surface of the first substrate and radiating a linearly polarized wave with respect to the antenna signal, and a second substrate provided at a part or the whole of the rear surface of the second radiator.
摘要翻译：同步产生圆偏振波和线偏振波的贴片天线包括相对于天线信号辐射圆偏振波的第一辐射体，设置在第一辐射体的后表面的一部分或全部的第一基底，第二散热器设置在所述第一基板的背面的一部分或全部，并相对于所述天线信号照射线偏振波;以及第二基板，设置在所述第二散热器的后表面的一部分或全部。

6. 发明授权

US06589837B1 Buried contact structure in semiconductor device and method of making the same 失效
标题翻译：半导体器件中的掩埋接触结构及其制造方法
公开(公告)号：US06589837B1
公开(公告)日：2003-07-08
申请号：US09688275
申请日：2000-10-12
申请人： Hyo-Dong Ban , Young-Hun Park
发明人： Hyo-Dong Ban , Young-Hun Park
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , H01L27/10811 , H01L27/10814
摘要： A first interlayer insulating layer is formed over a semiconductor substrate having a semiconductor element. A first line is formed on the first interlayer insulating layer and is connected to the semiconductor element via a contact hole. A second interlayer insulating layer is formed over the first line and the first interlayer insulating layer. An etch barrier layer is formed on the second interlayer insulating layer. A buried contract hole extends through the etch barrier layer and the first and second interlayer insulating layers. An insulating spacer is formed on the side walls of the buried contact hole. A second line is formed on the etch barrier layer and connected to the semiconductor element via the buried contact hole. The buried contact hole has a substantially vertical profile at a top end thereof to provide a sufficient misalignment margin between the buried contact hole and the second line.
摘要翻译：在具有半导体元件的半导体衬底上形成第一层间绝缘层。第一线形成在第一层间绝缘层上，并通过接触孔与半导体元件连接。在第一线和第一层间绝缘层上形成第二层间绝缘层。在第二层间绝缘层上形成蚀刻阻挡层。掩埋的合金孔延伸穿过蚀刻阻挡层和第一和第二层间绝缘层。在埋入式接触孔的侧壁上形成绝缘间隔物。第二线形成在蚀刻阻挡层上，并通过埋入接触孔与半导体元件连接。埋置的接触孔在其顶端处具有基本垂直的轮廓，以在埋入的接触孔和第二线之间提供足够的未对准余量。

7. 发明授权

US06346473B1 Methods for fabricating microelectronic device interconnects with spun-on glass regions 有权
标题翻译：用纺丝玻璃区域制造微电子器件互连的方法
公开(公告)号：US06346473B1
公开(公告)日：2002-02-12
申请号：US09550363
申请日：2000-04-19
申请人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
发明人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
IPC分类号： H01L214763
CPC分类号： H01L21/76819
摘要： An interconnect in a microelectronic device is formed by forming a first mesa on a substrate. A first insulation layer is then formed on the substrate, the first insulation layer covering the first mesa to define a step at an edge thereof A second mesa is formed on the first insulation layer adjacent the step, the second mesa being lower than the step. A second insulation layer is formed on the substrate, covering the second mesa and forming a step in the second insulation layer overlying the step in the first insulation layer. A spun-on-glass (SOG) layer on the second insulation layer, and then is planarized to expose a first portion of the second insulation layer at the step in the second insulation layer and to expose a second portion of the second insulation layer overlying the second mesa, thereby defining a planarized SOG region between the step and the second mesa. A third insulation layer is formed on the substrate, covering the planarized SOG region, and portions of the second and third insulation layers overlying the second mesa are then removed to expose a portion of the second mesa. An interconnecting region is formed n the second insulation layer which extends through the second and third insulation layers to contact the exposed portion of the second mesa. Microelectronic devices so formed are also discussed.
摘要翻译：微电子器件中的互连通过在衬底上形成第一台面而形成。然后在基板上形成第一绝缘层，第一绝缘层覆盖第一台面以限定其边缘处的台阶。第二绝缘层形成在与台阶相邻的第一绝缘层上，第二台面低于台阶。第二绝缘层形成在衬底上，覆盖第二台面，并且在第二绝缘层中形成覆盖第一绝缘层中的台阶的台阶。在第二绝缘层上的旋涂玻璃（SOG）层，然后被平坦化以在第二绝缘层中的台阶处露出第二绝缘层的第一部分，并暴露第二绝缘层的第二部分第二台面，从而在步骤和第二台面之间限定平坦化的SOG区域。在基板上形成覆盖平坦化的SOG区域的第三绝缘层，然后去除覆盖在第二台面上的第二绝缘层和第三绝缘层的部分以露出第二台面的一部分。互连区形成在第二绝缘层上，第二绝缘层延伸穿过第二和第三绝缘层以接触第二台面的暴露部分。还讨论了如此形成的微电子器件。

8. 发明授权

US5591670A Method of manufacturing a semiconductor device having self aligned contact hole 失效
标题翻译：制造具有自对准接触孔的半导体器件的方法
公开(公告)号：US5591670A
公开(公告)日：1997-01-07
申请号：US465103
申请日：1995-06-05
申请人： Won-mo Park , Jung-hyun Shin , Young-hun Park
发明人： Won-mo Park , Jung-hyun Shin , Young-hun Park
IPC分类号： H01L21/28 , H01L21/336 , H01L21/60 , H01L21/768 , H01L23/485 , H01L23/522 , H01L29/78 , H01L21/44
CPC分类号： H01L21/76897 , H01L23/485 , H01L2924/0002 , Y10S438/978
摘要： A highly integrated semiconductor device and method for manufacturing the same are disclosed. The device has a self-aligned contact structure for increasing a contact margin upon forming a self-aligned buried contact hole. An oxide film of an upper portion of a gate electrode is chamfered in order to form a self-aligned buried contact hole. Therefore, a self-aligned contact hole can be formed without enhancing the step, and as a result, the step between the cell and the peripheral portion of the cell can be reduced.
摘要翻译：公开了一种高度集成的半导体器件及其制造方法。该器件具有自对准的接触结构，用于在形成自对准的埋入接触孔时增加接触余量。为了形成自对准埋入接触孔，对栅电极的上部的氧化膜进行倒角处理。因此，可以在不改善步骤的情况下形成自对准的接触孔，结果，可以减小电池与电池的周边部分之间的步骤。

9. 发明申请

US20110298666A1 MIMO ANTENNA HAVING PARASITIC ELEMENTS 有权
标题翻译： MIMO天线具有PARASITIC元素
公开(公告)号：US20110298666A1
公开(公告)日：2011-12-08
申请号：US13202589
申请日：2009-10-19
申请人： Chan Ho Kim , Jin Myung Kim , Chang-Gyu Choi , Gyoung Rok Beak , Young Hun Park , Heung Ju Ahn , Yeon Ho Yang
发明人： Chan Ho Kim , Jin Myung Kim , Chang-Gyu Choi , Gyoung Rok Beak , Young Hun Park , Heung Ju Ahn , Yeon Ho Yang
IPC分类号： H01Q9/04
CPC分类号： H01Q21/28 , H01Q1/243 , H01Q5/364 , H01Q5/385
摘要： A Multiple-Input Multiple-Output (MIMO) antenna having parasitic elements is provided. The MIMO antenna includes a plurality of antenna elements, a plurality of parasitic elements, and a bridge. The plurality of antenna elements is symmetrically disposed on one side surface of a board while maintaining a predetermined distance therebetween. The plurality of parasitic elements is disposed on the other side surface of the board in a one-to-one correspondence with the plurality of antenna elements. The bridge is formed of a metal pattern line, and is configured to connect the plurality of parasitic elements to each other.
摘要翻译：提供了具有寄生元件的多输入多输出（MIMO）天线。 MIMO天线包括多个天线元件，多个寄生元件和桥接器。多个天线元件对称地设置在板的一个侧表面上，同时保持其间的预定距离。所述多个寄生元件与所述多个天线元件一一对应地配置在所述基板的另一侧面上。桥由金属图案线形成，并且被配置为将多个寄生元件彼此连接。

10. 发明授权

US6043165A Methods of forming electrically interconnected lines using ultraviolet radiation as an organic compound cleaning agent 失效
标题翻译：使用紫外线辐射作为有机化合物清洗剂形成电互连线的方法
公开(公告)号：US6043165A
公开(公告)日：2000-03-28
申请号：US890578
申请日：1997-07-09
申请人： Young-hun Park , Sung-hoon Ko , Jong-seob Lee
发明人： Young-hun Park , Sung-hoon Ko , Jong-seob Lee
IPC分类号： H01L21/3205 , H01L21/3105 , H01L21/311 , H01L21/768 , H01L23/522 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31055 , H01L21/31133 , Y10S438/94 , Y10S438/963
摘要： Methods of forming electrically interconnected lines using organic compound cleaning agents include the steps of forming a first electrically conductive line on a substrate and then forming a first electrically insulating layer on the first electrically conductive line to electrically isolate the first conductive line from adjacent regions and lines. An organic spin-on-glass (SOG) passivation layer is then formed as a planarization layer on the first electrically insulating layer. The organic SOG layer is then etched-back to define a first etched surface thereon, using a carbon-fluoride gas which also preferably contains argon. The organic SOG layer may even be sufficiently etched back to expose an upper surface of the first electrically insulating layer. The first etched surface is then exposed to an organic compound cleaning agent so that organic residues can be removed from the etched surface so that layers subsequently formed on the etched surface are less susceptible to lift-off and flaking. The organic compound cleaning agents preferably consist of ultraviolet radiation and/or an oxygen containing plasma. After the first etched surface has been cleaned, the first electrically insulating layer is patterned to define a via therein which exposes an underlying portion of the first electrically conductive line. A second electrically conductive line (e.g., second level metallization) is then preferably formed in ohmic contact with the exposed portions of the first electrically conductive line and the ohmic contact therebetween is preferably free of organic residues which might adversely affect contact reliability and resistance.
摘要翻译：使用有机化合物清洁剂形成电互连线的方法包括以下步骤：在衬底上形成第一导电线，然后在第一导电线上形成第一电绝缘层，以将第一导电线与相邻区域和线电隔离。然后在第一电绝缘层上形成有机旋涂玻璃（SOG）钝化层作为平坦化层。然后使用也优选含有氩的氟化碳气体将有机SOG层回蚀刻以限定其上的第一蚀刻表面。有机SOG层甚至可以被充分地回蚀刻以暴露第一电绝缘层的上表面。然后将第一蚀刻表面暴露于有机化合物清洁剂，使得可以从蚀刻表面除去有机残留物，使得随后在蚀刻表面上形成的层不易剥离和剥落。有机化合物清洗剂优选由紫外线辐射和/或含氧等离子体组成。在第一蚀刻表面已经被清洁之后，第一电绝缘层被图案化以限定其中暴露第一导电线的下面部分的通孔。优选地，第二导电线（例如，第二级金属化）与第一导电线的暴露部分欧姆接触形成，并且其之间的欧姆接触优选不含可能不利地影响接触可靠性和电阻的有机残余物。

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