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1. 发明授权

US06346473B1 Methods for fabricating microelectronic device interconnects with spun-on glass regions 有权
标题翻译：用纺丝玻璃区域制造微电子器件互连的方法
公开(公告)号：US06346473B1
公开(公告)日：2002-02-12
申请号：US09550363
申请日：2000-04-19
申请人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
发明人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
IPC分类号： H01L214763
CPC分类号： H01L21/76819
摘要： An interconnect in a microelectronic device is formed by forming a first mesa on a substrate. A first insulation layer is then formed on the substrate, the first insulation layer covering the first mesa to define a step at an edge thereof A second mesa is formed on the first insulation layer adjacent the step, the second mesa being lower than the step. A second insulation layer is formed on the substrate, covering the second mesa and forming a step in the second insulation layer overlying the step in the first insulation layer. A spun-on-glass (SOG) layer on the second insulation layer, and then is planarized to expose a first portion of the second insulation layer at the step in the second insulation layer and to expose a second portion of the second insulation layer overlying the second mesa, thereby defining a planarized SOG region between the step and the second mesa. A third insulation layer is formed on the substrate, covering the planarized SOG region, and portions of the second and third insulation layers overlying the second mesa are then removed to expose a portion of the second mesa. An interconnecting region is formed n the second insulation layer which extends through the second and third insulation layers to contact the exposed portion of the second mesa. Microelectronic devices so formed are also discussed.
摘要翻译：微电子器件中的互连通过在衬底上形成第一台面而形成。然后在基板上形成第一绝缘层，第一绝缘层覆盖第一台面以限定其边缘处的台阶。第二绝缘层形成在与台阶相邻的第一绝缘层上，第二台面低于台阶。第二绝缘层形成在衬底上，覆盖第二台面，并且在第二绝缘层中形成覆盖第一绝缘层中的台阶的台阶。在第二绝缘层上的旋涂玻璃（SOG）层，然后被平坦化以在第二绝缘层中的台阶处露出第二绝缘层的第一部分，并暴露第二绝缘层的第二部分第二台面，从而在步骤和第二台面之间限定平坦化的SOG区域。在基板上形成覆盖平坦化的SOG区域的第三绝缘层，然后去除覆盖在第二台面上的第二绝缘层和第三绝缘层的部分以露出第二台面的一部分。互连区形成在第二绝缘层上，第二绝缘层延伸穿过第二和第三绝缘层以接触第二台面的暴露部分。还讨论了如此形成的微电子器件。

2. 发明授权

US6072225A Microelectronic devices having interconnects with planarized spun-on glass regions 失效
标题翻译：具有与平面化旋涂玻璃区域互连的微电子器件
公开(公告)号：US6072225A
公开(公告)日：2000-06-06
申请号：US929591
申请日：1997-09-15
申请人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
发明人： Seung-hyun Chang , Suck-tae Kim , Young-hun Park
IPC分类号： H01L21/31 , H01L21/316 , H01L21/768 , H01L23/522 , H01L31/00 , H01L23/48 , H01L23/52 , H01L23/58
CPC分类号： H01L21/76819
摘要： An interconnect in a microelectronic device is formed by forming a first mesa on a substrate. A first insulation layer is then formed on the substrate, the first insulation layer covering the first mesa to define a step at an edge thereof. A second mesa is formed on the first insulation layer adjacent the step, the second mesa being lower than the step. A second insulation layer is formed on the substrate, covering the second mesa and forming a step in the second insulation layer overlying the step in the first insulation layer. A spun-on-glass (SOG) layer on the second insulation layer, and then is planarized to expose a first portion of the second insulation layer at the step in the second insulation layer and to expose a second portion of the second insulation layer overlying the second mesa, thereby defining a planarized SOG region between the step and the second mesa. A third insulation layer is formed on the substrate, covering the planarized SOG region, and portions of the second and third insulation layers overlying the second mesa are then removed to expose a portion of the second mesa. An interconnecting region is formed on the second insulation layer which extends through the second and third insulation layers to contact the exposed portion of the second mesa. Microelectronic devices so formed are also discussed.
摘要翻译：微电子器件中的互连通过在衬底上形成第一台面而形成。然后在衬底上形成第一绝缘层，第一绝缘层覆盖第一台面以在其边缘处限定一个台阶。在与台阶相邻的第一绝缘层上形成第二台面，第二台面低于台阶。第二绝缘层形成在衬底上，覆盖第二台面，并且在第二绝缘层中形成覆盖第一绝缘层中的台阶的台阶。在第二绝缘层上的旋涂玻璃（SOG）层，然后被平坦化以在第二绝缘层中的台阶处露出第二绝缘层的第一部分，并暴露第二绝缘层的第二部分第二台面，从而在步骤和第二台面之间限定平坦化的SOG区域。在基板上形成覆盖平坦化的SOG区域的第三绝缘层，然后去除覆盖在第二台面上的第二绝缘层和第三绝缘层的部分以露出第二台面的一部分。互连区域形成在第二绝缘层上，第二绝缘层延伸穿过第二和第三绝缘层以接触第二台面的暴露部分。还讨论了如此形成的微电子器件。

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