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    • 3. 发明授权
    • Electrolyte membrane, process for its production and polymer electrolyte fuel cell
    • 电解质膜,其生产工艺及聚合物电解质燃料电池
    • US07749629B2
    • 2010-07-06
    • US11092908
    • 2005-03-30
    • Satoru HommuraYoshiaki HiguchiHiromitsu Kusano
    • Satoru HommuraYoshiaki HiguchiHiromitsu Kusano
    • H01M8/10H01M8/08H01M8/14C25B13/00C25C7/04
    • C08J5/22H01B1/122H01M8/10H01M8/1004H01M8/1023H01M8/1039H01M8/106H01M8/1062Y02P70/56
    • An electrolyte membrane characterized by comprising a porous body formed from a melt-moldable fluororesin and having interconnected pores and an ion exchange resin with which the interconnected pores are filled, is provided. Specifically, the porous body is formed, for example, from an ethylene/tetrafluoroethylene copolymer, a tetrafluoroethylene/perfluoro(alkyl vinyl ether) copolymer, a tetrafluoroethylene/hexafluoropropylene copolymer, a tetrafluoroethylene/[CF2═CF—(OCF2CFY)a—Oc—(CF2)b—SO3H] copolymer (wherein Y is a fluorine atom or a trifluoromethyl group, a is an integer of 0 to 3, b is an integer of from 0 to 12, and c is 0 or 1, provided that when b=0, C=0), or the like. An electrolyte membrane reinforced by such a porous body has high mechanical strength even if it is thin, and is excellent in dimensional stability when hydrated, and a polymer electrolyte fuel cell with a membrane-electrode assembly having the electrolyte membrane provides a high output and is excellent in durability.
    • 一种电解质膜,其特征在于,包括由可熔融成型的氟树脂形成并具有互连孔的多孔体和填充有互连孔的离子交换树脂。 具体地说,多孔体例如由乙烯/四氟乙烯共聚物,四氟乙烯/全氟(烷基乙烯基醚)共聚物,四氟乙烯/六氟丙烯共聚物,四氟乙烯/ [CF 2 = CF-(OCF 2 CFY)a-Oc- (CF 2)b -SO 3 H]共聚物(其中Y为氟原子或三氟甲基,a为0〜3的整数,b为0〜12的整数,c为0或1,条件是当b = 0,C = 0)等。 由这样的多孔体增强的电解质膜即使较薄也具有高的机械强度,水合时的尺寸稳定性优异,具有电解质膜的膜电极组件的固体高分子型燃料电池提供高输出量 耐用性好。
    • 4. 发明申请
    • RELEASE FILM FOR SEMICONDUCTOR RESIN MOLDS
    • 用于半导体树脂胶片的胶片
    • US20100096772A1
    • 2010-04-22
    • US12644855
    • 2009-12-22
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • B29C45/14
    • B29C33/68H01L21/566H01L2924/0002Y10T428/3154Y10T428/31678Y10T428/31692H01L2924/00
    • A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5×10−15 (kmol m/(s·m2·kPa)) at 170° C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5 μm, exhibiting a satin-finish.
    • 通过使半导体衬底与包括真空抽吸的模具形式的阻气性隔离膜的脱模层(I)的表面接触来密封半导体衬底的工艺; 在半导体基板和模具之间注入密封树脂; 以及从其上具有所述密封树脂的所述半导体衬底释放所述模具,其中所述阻气性隔离膜具有脱模层(I),其具有优异的剥离性; 支撑脱模层的塑料支撑层(II); 和存在于剥离层和支撑层之间的金属或金属氧化物气体限制层(III),其中阻气性剥离膜的二甲苯气体渗透率为5×10-15以下(km / m /(s·s) m2·kPa)),所述剥离层(I)的表面的算术表面粗糙度为0.15〜3.5μm,呈缎纹。
    • 6. 发明授权
    • Release film for semiconductor resin molds
    • 半导体树脂模具剥离膜
    • US08268218B2
    • 2012-09-18
    • US12644855
    • 2009-12-22
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • B29C45/14
    • B29C33/68H01L21/566H01L2924/0002Y10T428/3154Y10T428/31678Y10T428/31692H01L2924/00
    • A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5×10−15 (kmol m/(s·m2·kPa)) at 170° C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5 μm, exhibiting a satin-finish.
    • 通过使半导体衬底与包括真空抽吸的模具形式的阻气性隔离膜的脱模层(I)的表面接触来密封半导体衬底的工艺; 在半导体基板和模具之间注入密封树脂; 以及从其上具有所述密封树脂的所述半导体衬底释放所述模具,其中所述阻气性隔离膜具有脱模层(I),其具有优异的剥离性; 支撑脱模层的塑料支撑层(II); 和存在于剥离层和支撑层之间的金属或金属氧化物气体限制层(III),其中阻气性剥离膜的二甲苯气体渗透率为5×10-15以下(km / m /(s·s) m2·kPa)),所述剥离层(I)的表面的算术表面粗糙度为0.15〜3.5μm,呈缎纹。