会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Release film for semiconductor resin molds
    • 半导体树脂模具剥离膜
    • US08268218B2
    • 2012-09-18
    • US12644855
    • 2009-12-22
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • B29C45/14
    • B29C33/68H01L21/566H01L2924/0002Y10T428/3154Y10T428/31678Y10T428/31692H01L2924/00
    • A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5×10−15 (kmol m/(s·m2·kPa)) at 170° C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5 μm, exhibiting a satin-finish.
    • 通过使半导体衬底与包括真空抽吸的模具形式的阻气性隔离膜的脱模层(I)的表面接触来密封半导体衬底的工艺; 在半导体基板和模具之间注入密封树脂; 以及从其上具有所述密封树脂的所述半导体衬底释放所述模具,其中所述阻气性隔离膜具有脱模层(I),其具有优异的剥离性; 支撑脱模层的塑料支撑层(II); 和存在于剥离层和支撑层之间的金属或金属氧化物气体限制层(III),其中阻气性剥离膜的二甲苯气体渗透率为5×10-15以下(km / m /(s·s) m2·kPa)),所述剥离层(I)的表面的算术表面粗糙度为0.15〜3.5μm,呈缎纹。
    • 2. 发明申请
    • RELEASE FILM FOR SEMICONDUCTOR RESIN MOLDS
    • 用于半导体树脂胶片的胶片
    • US20100096772A1
    • 2010-04-22
    • US12644855
    • 2009-12-22
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • Tamao OkuyaHiroshi ArugaYoshiaki Higuchi
    • B29C45/14
    • B29C33/68H01L21/566H01L2924/0002Y10T428/3154Y10T428/31678Y10T428/31692H01L2924/00
    • A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5×10−15 (kmol m/(s·m2·kPa)) at 170° C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5 μm, exhibiting a satin-finish.
    • 通过使半导体衬底与包括真空抽吸的模具形式的阻气性隔离膜的脱模层(I)的表面接触来密封半导体衬底的工艺; 在半导体基板和模具之间注入密封树脂; 以及从其上具有所述密封树脂的所述半导体衬底释放所述模具,其中所述阻气性隔离膜具有脱模层(I),其具有优异的剥离性; 支撑脱模层的塑料支撑层(II); 和存在于剥离层和支撑层之间的金属或金属氧化物气体限制层(III),其中阻气性剥离膜的二甲苯气体渗透率为5×10-15以下(km / m /(s·s) m2·kPa)),所述剥离层(I)的表面的算术表面粗糙度为0.15〜3.5μm,呈缎纹。