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1. 发明授权

US06584987B1 Method for improved cleaning in HDP-CVD process with reduced NF3 usage 有权
标题翻译：改善HDP-CVD工艺清洗方法，减少NF3使用的方法
公开(公告)号：US06584987B1
公开(公告)日：2003-07-01
申请号：US09808929
申请日：2001-03-16
申请人： Yi-Lung Cheng , Chun-Ching Tsan , Wen-Kung Cheng , Yin-Lang Wang
发明人： Yi-Lung Cheng , Chun-Ching Tsan , Wen-Kung Cheng , Yin-Lang Wang
IPC分类号： B08B704
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S438/905
摘要： A method for cleaning residual material from a chemical vapor deposition (CVD) apparatus in situ employing dry etching. There is first employed a high density plasma chemical vapor deposition (HDP-CVD) method to deposit layers of silicon oxide material upon substrates within a chemical vapor deposition reactor apparatus. After removal of substrates, the reactor chamber is closed off. The interior of the reactor is then filled with a gas and a plasma formed therewithin, to which oxygen is added and the reactor allowed to come to an increased temperature and bake for a period of time. The reactor power is then turned off and the reactor evacuated. There is then carried out a normal cleaning step within the reactor chamber employing a reactive gas such as NF3, with greater cleaning efficiency due to the increased temperature caused by the baking step.
摘要翻译：一种从化学气相沉积（CVD）装置中原位采用干法蚀刻来清除残余物质的方法。首先采用高密度等离子体化学气相沉积（HDP-CVD）方法在化学气相沉积反应器装置中的衬底上沉积氧化硅材料层。在移除基板之后，关闭反应室。然后将反应器的内部填充有在其中形成的气体和等离子体，向其中加入氧并使反应器升温并烘烤一段时间。然后关闭反应堆功率，反应器排空。然后，使用反应气体如NF3在反应器室内进行正常的清洗步骤，由于烘烤步骤引起的温度升高，清洗效率更高。

2. 发明授权

US06499222B1 Template for measuring edge width and method of using 有权
标题翻译：用于测量边缘宽度的模板和使用方法
公开(公告)号：US06499222B1
公开(公告)日：2002-12-31
申请号：US09240414
申请日：1999-01-29
申请人： Hung-Ju Chien , Ying-Hsiang Chen , Wen-Kung Cheng , Yin-Lang Wang
发明人： Hung-Ju Chien , Ying-Hsiang Chen , Wen-Kung Cheng , Yin-Lang Wang
IPC分类号： G01B314
CPC分类号： G01B3/14
摘要： A template for measuring the edge width on a disk that is not covered by a coating layer on a top surface of the disk and a method for using such template are disclosed. The template is made of a substantially transparent sheet that has a contour substantially the same as the contour of the disk to be measured. A series of marks are provided on a top surface of the sheet along a peripheral edge of the sheet at numerous predetermined distances from the peripheral edge. The marks may be provided in scribed thin lines, or the marks may be provided in scribed thin lines that are color coded for easier identification purpose. The present invention novel template can be most suitably used on a silicon wafer of any size. However, it can also be used on a disk of any shape or contour to produce the same desirable result.
摘要翻译：公开了一种用于测量不被盘顶表面上的涂层覆盖的盘上的边缘宽度的模板以及使用该模板的方法。该模板由基本上透明的片材制成，其具有与要测量的盘的轮廓基本相同的轮廓。沿着片材的周边边缘以距离周边边缘多个预定距离的方式，在片材的顶表面上提供一系列标记。标记可以以划线的细线提供，或者标记可以以划线的细线提供，其颜色编码以便于识别目的。本发明的新型模板可以最适用于任何尺寸的硅晶片。然而，它也可以用于任何形状或轮廓的盘上以产生相同的期望结果。

3. 发明授权

US06235653B1 Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer 有权
标题翻译：用于双镶嵌和/或接触蚀刻停止层的基于Ar的富Si氧氮化物膜
公开(公告)号：US06235653B1
公开(公告)日：2001-05-22
申请号：US09324924
申请日：1999-06-04
申请人： Hung-Ju Chien , Yuan-Hung Chiu , Wen-Kung Cheng , Yin-Lang Wang
发明人： Hung-Ju Chien , Yuan-Hung Chiu , Wen-Kung Cheng , Yin-Lang Wang
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , H01L21/3145 , H01L21/76807
摘要： A new method of forming a plasma-enhanced silicon-rich oxynitride layer having improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity by using argon as the inert carrier gas is described. A semiconductor substrate is provided which may include semiconductor device structures. An Argon-based silicon-rich oxynitride etch stop layer is deposited overlying the semiconductor substrate. An oxide layer is deposited overlying the Argon-based silicon-rich oxynitride etch stop layer. An opening is etched through the oxide layer stopping at the Argon-based silicon-rich oxynitride etch stop layer. Thereafter, the Argon-based silicon-rich oxynitride etch stop layer within the opening is removed. The opening is filled with a conducting layer. This Argon-based silicon-rich oxynitride layer has improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity as compared with a helium-based silicon-rich oxynitride layer.
摘要翻译：描述了通过使用氩作为惰性载气，在层厚度，折射率和反射率方面形成了具有改善的晶片均匀性的等离子体增强的富硅氧氮化物层的新方法。提供一种可包括半导体器件结构的半导体衬底。沉积在半导体衬底上的基于氩的富硅氧氮化物蚀刻停止层。覆盖基于氩的富硅氧氮化物蚀刻停止层上的氧化物层。蚀刻通过在氩基富硅氧氮化物蚀刻停止层处停止的氧化物层的开口。此后，除去开口内的基于氩的富硅氧氮化物蚀刻停止层。开口填充有导电层。与基于氦的富硅氧氮化物层相比，这种基于氩的富硅氧氮化物层在层厚度，折射率和反射率方面具有改善整个晶片的均匀性。

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