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1. 发明申请

US20110320910A1 STORAGE MANAGEMENT METHOD AND STORAGE SYSTEM 审中-公开
标题翻译：存储管理方法和存储系统
公开(公告)号：US20110320910A1
公开(公告)日：2011-12-29
申请号：US12825355
申请日：2010-06-29
申请人： Yi-Chun Liu , Yun-Tai Kao Yang
发明人： Yi-Chun Liu , Yun-Tai Kao Yang
IPC分类号： G06F11/08 , G06F15/16 , G06F12/10
CPC分类号： G06F12/0246 , G06F11/10 , G06F2212/7201
摘要： A storage system is provided. The storage system comprises a storage media, a storage controller and a host. The storage controller is connected to the storage media. The host is connected to the storage controller, and performs a physical resource management algorithm for managing a physical resource of the storage media, so as to output at least a media operation command to the storage controller. The storage controller performs the media operation command to manage the storage media. A storage management method is also provided.
摘要翻译：提供存储系统。存储系统包括存储介质，存储控制器和主机。存储控制器连接到存储介质。主机连接到存储控制器，并且执行用于管理存储介质的物理资源的物理资源管理算法，以至少将媒体操作命令输出到存储控制器。存储控制器执行媒体操作命令来管理存储介质。还提供存储管理方法。

2. 发明授权

US07775954B2 Cutter shifting mechanism for center machine 失效
标题翻译：中心机切刀换档机构
公开(公告)号：US07775954B2
公开(公告)日：2010-08-17
申请号：US11767599
申请日：2007-06-25
申请人： Yi-Chun Liu
发明人： Yi-Chun Liu
IPC分类号： B23Q3/157
CPC分类号： B23Q3/1554 , B23Q2003/155428 , B23Q2003/155439 , Y10T483/1755 , Y10T483/1767
摘要： A cutter shifting mechanism includes a main body having a longitudinal cylinder casing and a shaft is located in the longitudinal cylinder casing. An arm is connected to a lower end of the shaft so as to be connected with cutters. A longitudinal pushing device is connected to a top end of the shaft and a gear is rotatably mounted to the shaft. The gear is movable along a longitudinal axis of the shaft. A threaded rod is engaged with the gear and connected with a latitude pushing device. Each of the longitudinal and latitude pushing devices includes a pneumatic cylinder. The mechanism includes simple structure and can be manufactured at low cost. The pneumatic cylinders accurately operate the parts of the mechanism.
摘要翻译：切刀移动机构包括具有纵向气缸壳体的主体，并且轴位于纵向气缸壳体中。臂连接到轴的下端，以便与切割器连接。纵向推动装置连接到轴的顶端，齿轮可旋转地安装在轴上。齿轮可沿着轴的纵向轴线移动。螺纹杆与齿轮接合并与纬度推动装置连接。纵向和纬度推动装置中的每一个包括气缸。该机构结构简单，可以低成本制造。气缸精确地操作机构的部件。

3. 发明申请

US20070245064A1 Method Of Flash Memory Management 失效
标题翻译：闪存管理方法
公开(公告)号：US20070245064A1
公开(公告)日：2007-10-18
申请号：US11279889
申请日：2006-04-15
申请人： Yi-Chun Liu
发明人： Yi-Chun Liu
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7211 , G11C16/349 , G11C16/3495 , G11C29/76
摘要： A wear-leveling method for managing flash memory is provided, including an access process to consult a translation table when accessing a data block in the data region, and a reconstruction process to reconstruct the translation table when powering on the flash memory. The translation table is defined to include a plurality of entries, and each entry includes a physical address field and an enduring counter field. The logical address of a data block is used as input to map to the entry in the translation table. The access process, further including a read process and an erase/program process, maps the logical address to the physical address, and uses the enduring counter to determine whether an update is required to avoid the disturbance. The reconstruct process uses the information stored in the spare data region to reconstruct the translation table for the access process to consult during flash memory accesses.
摘要翻译：提供了一种用于管理闪速存储器的磨损均衡方法，包括当访问数据区域中的数据块时参考翻译表的访问过程，以及重新启动过程以在对闪存进行上电时重建转换表。翻译表被定义为包括多个条目，并且每个条目包括物理地址字段和持续的计数器字段。数据块的逻辑地址用作输入，以映射到转换表中的条目。访问过程还包括读取处理和擦除/编程处理，将逻辑地址映射到物理地址，并且使用持续计数器来确定是否需要更新以避免干扰。重建过程使用存储在备用数据区域中的信息来重建用于在闪速存储器访问期间进行访问的访问过程的转换表。

4. 发明申请

US20140089564A1 METHOD OF DATA COLLECTION IN A NON-VOLATILE MEMORY 审中-公开
标题翻译：数据收集在非易失性存储器中的方法
公开(公告)号：US20140089564A1
公开(公告)日：2014-03-27
申请号：US13628651
申请日：2012-09-27
申请人： Yi Chun Liu , JiunHsien Lu
发明人： Yi Chun Liu , JiunHsien Lu
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202 , G06F2212/7205
摘要： A method of data collection is performed in a non-volatile memory that has a number of blocks and each block has multiple pages. A timestamp is recorded associated with a data written to the non-volatile memory. Some of the written data are moved from a plurality of different pages respectively to a first block according to the timestamps associated with the plurality of written data stored in the plurality of different pages.
摘要翻译：在具有多个块的非易失性存储器中执行数据采集的方法，并且每个块具有多个页面。记录与写入非易失性存储器的数据相关联的时间戳。根据与存储在多个不同页面中的多个写入数据相关联的时间戳，一些书写数据分别从多个不同页面移动到第一块。

5. 发明授权

US08671239B2 Nonvolatile memory apparatus for performing wear-leveling and method for controlling the same 有权
标题翻译：用于进行磨损平整的非易失性存储装置及其控制方法
公开(公告)号：US08671239B2
公开(公告)日：2014-03-11
申请号：US12963379
申请日：2010-12-08
申请人： Wun Mo Yang , Yi Chun Liu
发明人： Wun Mo Yang , Yi Chun Liu
IPC分类号： G06F12/00 , G11C11/34
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： Various embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the nonvolatile memory apparatus may include: a host interface; a memory controller coupled to the host interface; and a memory area including a plurality of chips controlled by the memory controller. The memory controller may be configured to assign logical addresses to the plurality of chips to form a plurality of virtual logical groups, set a plurality of threshold values and a plurality of scan ranges depending on the total erase count (TEC) of each logical group, and perform wear-leveling in stages.
摘要翻译：公开了非易失性存储装置的各种实施例。在一个示例性实施例中，非易失性存储装置可以包括：主机接口; 耦合到所述主机接口的存储器控制器; 以及包括由该存储器控制器控制的多个芯片的存储区域。存储器控制器可以被配置为将逻辑地址分配给多个芯片以形成多个虚拟逻辑组，根据每个逻辑组的总擦除次数（TEC）设置多个阈值和多个扫描范围，并分阶段进行磨损均衡。

6. 发明申请

US20120160551A1 EMBEDDED STRUCTURE OF CIRCUIT BOARD 审中-公开
标题翻译：电路板嵌入式结构
公开(公告)号：US20120160551A1
公开(公告)日：2012-06-28
申请号：US13413666
申请日：2012-03-07
申请人： Yi-Chun Liu , Wei-Ming Cheng , Tsung-Yuan Chen , Shu-Sheng Chiang
发明人： Yi-Chun Liu , Wei-Ming Cheng , Tsung-Yuan Chen , Shu-Sheng Chiang
IPC分类号： H05K1/09 , H05K1/02 , H05K1/11
CPC分类号： H05K3/107 , H05K3/0032 , H05K3/0055 , H05K3/184 , H05K3/426 , H05K2201/0236 , H05K2203/0571 , H05K2203/1388 , Y10T29/49117 , Y10T29/49144 , Y10T29/49155 , Y10T29/49165
摘要： An embedded structure of circuit board is provided. The embedded structure of the present invention includes a dielectric layer, a pad opening disposed in the dielectric layer, and a via disposed in the pad opening and in the dielectric layer, wherein the outer surface of the dielectric layer has a substantially even surface.
摘要翻译：提供电路板的嵌入式结构。本发明的嵌入式结构包括电介质层，设置在电介质层中的焊盘开口以及布置在焊盘开口和电介质层中的通孔，其中电介质层的外表面具有基本均匀的表面。

7. 发明申请

US20090301997A1 FABRICATING PROCESS OF STRUCTURE WITH EMBEDDED CIRCUIT 有权
标题翻译：嵌入式电路结构的制作工艺
公开(公告)号：US20090301997A1
公开(公告)日：2009-12-10
申请号：US12211637
申请日：2008-09-16
申请人： Yi-Chun Liu
发明人： Yi-Chun Liu
IPC分类号： H01B13/00
CPC分类号： H05K3/107 , H05K3/045 , H05K3/184 , H05K3/465 , H05K3/4661 , H05K2201/0236 , H05K2203/1173 , H05K2203/1338 , Y10T29/49155
摘要： A fabricating process of a structure with an embedded circuit is described as follows. Firstly, a substrate having an upper surface and a lower surface opposite to the upper surface is provided. Afterward, a dielectric layer is formed on the upper surface of the substrate. Next, a plating-resistant layer is formed on the dielectric layer. Then, the plating-resistant layer and the dielectric layer are patterned for forming an recess pattern on the dielectric layer. Subsequently, a conductive base layer is formed in the recess pattern by using a chemical method, and the plating-resistant layer is exposed by the conductive base layer. After that, the plating-resistant layer is removed.
摘要翻译：具有嵌入电路的结构的制造工艺描述如下。首先，提供具有与上表面相对的上表面和下表面的基板。之后，在基板的上表面形成电介质层。接下来，在电介质层上形成耐电镀层。然后，对电镀层和电介质层进行图案化以在电介质层上形成凹陷图案。随后，通过使用化学方法在凹陷图案中形成导电性基底层，并且通过导电性基底层露出耐电镀层。之后，除去耐电镀层。

8. 发明授权

US07158302B2 Wire grid polarizer with double metal layers 有权
标题翻译：带双层金属层的线栅偏振器
公开(公告)号：US07158302B2
公开(公告)日：2007-01-02
申请号：US10820421
申请日：2004-04-08
申请人： Chih-Ho Chiu , Hui-Lung Kuo , Yi-Chun Liu , Ping-Chen Chen
发明人： Chih-Ho Chiu , Hui-Lung Kuo , Yi-Chun Liu , Ping-Chen Chen
IPC分类号： G02B27/28
CPC分类号： G02B5/3058
摘要： A wire grid polarizer with double metal layers for the visible spectrum. Parallel dielectric layers having a period (p) of 10˜250 nm and a trench between adjacent dielectric layers overlie a transparent substrate. A first metal layer having a first thickness (d1) of 30˜150 nm is disposed in the trench. A second metal layer having a second thickness (d2) of 30˜150 nm and a width (w) overlies on the top surface of each dielectric layer. The first and second metal layers are separated by a vertical distance (l) of 10˜100 nm. The first thickness (d1) is the same as the second thickness (d2). A ratio of the width (w) to the period (p) is 25˜75%.
摘要翻译：具有可见光谱双金属层的线栅偏振器。具有10〜250nm的周期（p）的平行电介质层和相邻电介质层之间的沟槽覆盖在透明基板上。具有30〜150nm的第一厚度（d 1）的第一金属层设置在沟槽中。具有30〜150nm的第二厚度（d 2）和宽度（w）的第二金属层覆盖在每个介电层的顶表面上。第一和第二金属层被隔开10〜100nm的垂直距离（l）。第一厚度（d 1）与第二厚度（d 2）相同。宽度（w）与周期（p）的比率为25〜75％。

9. 发明授权

US07089651B2 Process of manufacturing coil layers using a novel combination of photoexposure and thermal curing to achieve shape control of a photoresist material 失效
标题翻译：使用光曝光和热固化的新颖组合制造线圈层以实现光致抗蚀剂材料的形状控制的工艺
公开(公告)号：US07089651B2
公开(公告)日：2006-08-15
申请号：US09971277
申请日：2001-10-05
申请人： Yi Zheng , Yi-Chun Liu
发明人： Yi Zheng , Yi-Chun Liu
IPC分类号： G11B5/17 , G03F7/00
CPC分类号： G11B5/313 , G11B5/17 , G11B5/3116 , G11B5/3163 , Y10T29/49034 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064 , Y10T29/49073
摘要： A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.
摘要翻译：一种用于形成具有超短磁轭的磁写头的至少两层电线圈及其支撑电阻层的方法，使得第二和任何附加线圈层形成在平坦电阻表面上，以消除与中间和/ 层间短路和线圈与轭之间短路。电阻层通过使用新型的两步光致抗蚀剂方案形成具有平坦表面和期望的顶角，其中光致抗蚀剂层首先被光曝光和显影，然后再次光照曝光以固化在最终的期间保持平坦的表面区域低温固化工艺。

10. 发明申请

US20050088739A1 Wire grid polarizer with double metal layers 有权
标题翻译：带双层金属层的线栅偏振器
公开(公告)号：US20050088739A1
公开(公告)日：2005-04-28
申请号：US10820421
申请日：2004-04-08
申请人： Chih-Ho Chiu , Hui-Lung Kuo , Yi-Chun Liu , Pin-Chen Chen
发明人： Chih-Ho Chiu , Hui-Lung Kuo , Yi-Chun Liu , Pin-Chen Chen
IPC分类号： G02B5/30 , G02B27/28
CPC分类号： G02B5/3058
摘要： A wire grid polarizer with double metal layers for the visible spectrum. Parallel dielectric layers having a period (p) of 10˜250 nm and a trench between adjacent dielectric layers overlie a transparent substrate. A first metal layer having a first thickness (d1) of 30˜150 nm is disposed in the trench. A second metal layer having a second thickness (d2) of 30˜150 nm and a width (w) overlies on the top surface of each dielectric layer. The first and second metal layers are separated by a vertical distance (l) of 10˜100 nm. The first thickness (d1) is the same as the second thickness (d2). A ratio of the width (w) to the period (p) is 25˜75%.
摘要翻译：具有可见光谱双金属层的线栅偏振器。具有10〜250nm的周期（p）的平行电介质层和相邻电介质层之间的沟槽覆盖在透明基板上。具有30〜150nm的第一厚度（d 1）的第一金属层设置在沟槽中。具有30〜150nm的第二厚度（d 2）和宽度（w）的第二金属层覆盖在每个介电层的顶表面上。第一和第二金属层被隔开10〜100nm的垂直距离（l）。第一厚度（d 1）与第二厚度（d 2）相同。宽度（w）与周期（p）的比率为25〜75％。

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