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    • 3. 发明授权
    • Synergistic multiple bit error correction for memory of array chips
    • 用于阵列芯片存储器的协同多位纠错
    • US5418796A
    • 1995-05-23
    • US675994
    • 1991-03-26
    • Donald W. PriceYee-Ming Ting
    • Donald W. PriceYee-Ming Ting
    • G06F11/10G06F12/16H03M13/00
    • G06F11/1028
    • A two-level multiple bit error correction scheme includes at the first level a memory chip with a memory error detection capability that produces a chip error signal (CES) when it detects errors in the bits leaving that chip and at the second level an off-chip ECC facility which interprets generated syndrome bits and chip error signals in order to determine which bits are bad. There are two types of codes distinguished by the absence or presence of parity bits. The use of parity bits allows for the detection of single bit errors in data read from the chip. Therefore, the CES is active only for detected multiple bit errors. Chips not using parity bits are less expensive, but the CES must be active for both single bit and multiple bit errors.
    • 两级多位错误校正方案在第一级包括具有存储器错误检测能力的存储器芯片,当存储器芯片检测到离开该芯片的位中的错误并且在第二级处产生偏移信号时产生芯片误差信号(CES) 芯片ECC设备,其解释生成的校正子位和码片错误信号,以便确定哪些位是坏的。 有两种类型的代码是由不存在或存在奇偶校验位来区分的。 奇偶校验位的使用允许检测从芯片读取的数据中的单位错误。 因此,CES只对检测到的多个位错误有效。 不使用奇偶校验位的芯片成本较低,但CES必须对单位和多位错误都有效。