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1. 发明授权

US09490039B2 Strip of Cu—Co—Si-based copper alloy for electronic materials and the method for producing the same 有权
标题翻译：电子材料用Cu-Co-Si系铜合金带及其制造方法
公开(公告)号：US09490039B2
公开(公告)日：2016-11-08
申请号：US14008035
申请日：2012-03-15
申请人： Hiroshi Kuwagaki , Yasuhiro Okafuji
发明人： Hiroshi Kuwagaki , Yasuhiro Okafuji
IPC分类号： C22C9/06 , C22F1/08 , H01B1/02 , H01L23/495 , C22C9/00
CPC分类号： H01B1/026 , C22C9/00 , C22F1/08 , H01L23/49579 , H01L2924/0002 , H01L2924/00
摘要： Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied.(a) A diffraction peak height at β angle 120° among diffraction peak intensities by β scanning at α=25° in a {200} pole figure is at least 10 times that of standard copper powder.
摘要翻译：（a）在{200}极数中，α= 25°时，通过β扫描得到的衍射峰强度的β角120°处的衍射峰高度为标准铜粉末的至少10倍。

2. 发明申请

US20130180630A1 Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于电子材料的Cu-Co-Si基合金及其制造方法
公开(公告)号：US20130180630A1
公开(公告)日：2013-07-18
申请号：US13876185
申请日：2011-09-06
申请人： Yasuhiro Okafuji , Takuma Onda , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Takuma Onda , Hiroshi Kuwagaki
IPC分类号： H01B1/02
CPC分类号： H01B1/026 , C22C9/06 , C22F1/08 , H01H1/025
摘要： A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm2 is 5 μm or less.
摘要翻译：提供具有机械性能并且具有良好机械和电学性质的Cu-Co-Si基合金作为电子材料的铜合金。用于电子材料的铜合金包含0.5质量％至3.0质量％的Co，0.1质量％至1.0质量％的Si，余量为不可避免的杂质。平均粒径在3μm〜15μm的范围内，每个观察场中的最大粒径和最小粒径之间的平均差为0.05mm 2以下。

3. 发明授权

US09076569B2 Cu—Co—Si alloy material and manufacturing method thereof 有权
标题翻译： Cu-Co-Si合金材料及其制造方法
公开(公告)号：US09076569B2
公开(公告)日：2015-07-07
申请号：US13637731
申请日：2011-03-25
申请人： Yasuhiro Okafuji
发明人： Yasuhiro Okafuji
IPC分类号： C22C9/06 , C22F1/08 , H01B1/02 , C22C1/10 , C22F1/00 , C22C9/00
CPC分类号： H01B1/026 , C22C1/10 , C22C9/00 , C22C9/06 , C22F1/00 , C22F1/08
摘要： A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm2 having diameters of from 0.20 μm or more to less than 1.00 μm, having a grain size of 10 μm or less, an electrical conductivity of 60% IACS or more, and good bending workability. The above alloy material contains 10 to 1,000 second phase particles per mm2 having diameters of from 1.00 to 5.00 μm, the 0.2% yield strength may be 600 MPa or more, the temperature of hot heating performed after casting and before solution treatment is a temperature that is 45° C. or more higher than the solution treatment temperature selected below, the cooling rate from the temperature at the start of hot rolling to 600° C. is 100° C./min or lower, the solution treatment temperature is selected from (50×Co wt %+775)° C. or more to (50×Co wt %+825)° C. or less, and can be manufactured employing aging treatment after solution treatment preferably at 450 to 650° C. for 1 to 20 hours.
摘要翻译：适合于电子电气设备的材料的铜合金材料，例如具有优异的弯曲加工性并且能够显示高导电性的可移动连接器的材料通过含有1.5-2.5重量％的Co和0.3至 0.7重量％的Co / Si元素比率为3.5〜5.0，含有每平方毫米直径为0.20微米以上且小于1.00微米的3000〜150,000的第二相粒子，粒径为10μm以下，电导率为60％IACS以上，弯曲加工性良好。上述合金材料含有直径为1.00〜5.00μm的每1mm 2的10〜1000个第二相粒子，0.2％屈服强度可以为600MPa以上，铸造后和固溶处理前的热加热温度为比以下选择的固溶处理温度高45℃以上，从热轧开始至600℃的冷却速度为100℃/分钟以下，固溶处理温度选自（50×Co wt％+ 775）℃以上至（50×Cowt％+ 825）℃以下，并且可以在固溶处理后优选在450〜650℃下进行时效处理而制造1 至20小时。

4. 发明申请

US20140014241A1 STRIP OF Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND THE METHOD FOR PRODUCING THE SAME 有权
标题翻译：用于电子材料的Cu-Co-Si系铜合金条及其制造方法
公开(公告)号：US20140014241A1
公开(公告)日：2014-01-16
申请号：US14008035
申请日：2012-03-15
申请人： Hiroshi Kuwagaki , Yasuhiro Okafuji
发明人： Hiroshi Kuwagaki , Yasuhiro Okafuji
IPC分类号： H01B1/02
CPC分类号： H01B1/026 , C22C9/00 , C22F1/08 , H01L23/49579 , H01L2924/0002 , H01L2924/00
摘要： Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at β angle 120° among diffraction peak intensities by β scanning at α=25° in a {200} pole figure is at least 10 times that of standard copper powder.
摘要翻译：提供了不仅在强度和导电性之间保持良好平衡而且抑制悬垂卷曲的Cu-Co-Si基合金带。用于电子材料的铜合金带包括Co的0.5-2.5质量％，Si的0.1-0.7质量％，余量的Cu和不可避免的杂质，其中，根据从X射线衍射极数的测量得到的结果，使用轧制表面作为参考平面，满足以下（a）。（a）在{200}极数中，α= 25°时β扫描的衍射峰强度之间的β角120°的衍射峰高度至少为标准铜粉的10倍。

5. 发明申请

US20140014240A1 Cu-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：用于电子材料的Cu-Si-Co系铜合金及其制造方法
公开(公告)号：US20140014240A1
公开(公告)日：2014-01-16
申请号：US14006735
申请日：2012-03-02
申请人： Yasuhiro Okafuji , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Hiroshi Kuwagaki
IPC分类号： H01B1/02
CPC分类号： H01B1/026 , C22C1/02 , C22C9/06 , C22F1/08
摘要： A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.
摘要翻译：提供了具有增强的弹簧极限的Cu-Si-Co基合金。铜合金含有0.5-2.5质量％的Co，0.1-0.7质量％的Si，余量为Cu和不可避免的杂质，其中，从使用轧制表面作为参考的X射线衍射极图的测量得到的结果在{111} Cu平面中的相对于{200} Cu平面的衍射峰中的角度为90°处的峰值高度为α= 35°时的β扫描，至少为标准铜粉末的2.5倍。

6. 发明申请

US20130209825A1 COPPER-COBALT-SILICON ALLOY FOR ELECTRODE MATERIAL 审中-公开
标题翻译：铜 - 钴合金电极材料
公开(公告)号：US20130209825A1
公开(公告)日：2013-08-15
申请号：US13818455
申请日：2011-08-24
申请人： Yasuhiro Okafuji
发明人： Yasuhiro Okafuji
IPC分类号： H01B1/02 , C22C9/00
CPC分类号： H01B1/026 , C22C9/00 , C22C9/06 , C22C9/10 , C22F1/08 , Y10T428/12014
摘要： Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≦Co/Si≦5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.
摘要翻译：公开了一种用于电子材料的铜 - 钴 - 硅（Cu-Co-Si）合金，其电导率，强度和弯曲成形性之间的平衡改善，其包含0.5〜3.0质量％的Co，0.1〜1.0质量％的Si和余量的Cu和不可避免的杂质，其具有Co / Si（Co / Si）的质量百分比与以3.5≤Co/ Si @ 5.0给出的平均粒径为第二相颗粒的比例在该范围内在与轧制方向平行取得的截面中观察到的1〜50μm的粒径为2〜10nm，相邻的第2相粒子的平均距离为10〜50nm。

7. 发明授权

US09478323B2 Cu—Si—Co-based copper alloy for electronic materials and method for producing the same 有权
标题翻译：用于电子材料的Cu-Si-Co基铜合金及其制造方法
公开(公告)号：US09478323B2
公开(公告)日：2016-10-25
申请号：US14006735
申请日：2012-03-02
申请人： Yasuhiro Okafuji , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , H01B1/02 , C22F1/08 , C22C1/02
CPC分类号： H01B1/026 , C22C1/02 , C22C9/06 , C22F1/08
摘要： A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.
摘要翻译：提供了具有增强的弹簧极限的Cu-Si-Co基合金。铜合金含有0.5-2.5质量％的Co，0.1-0.7质量％的Si，余量为Cu和不可避免的杂质，其中，从使用轧制表面作为参考的X射线衍射极图的测量得到的结果在α= 35°下通过β扫描相对于{200} Cu平面的{111} Cu平面中的衍射峰之间的角度为90°的峰高度为标准铜粉末的至少2.5倍。

8. 发明申请

US20130019997A1 CU-CO-SI ALLOY MATERIAL 有权
标题翻译： CU-CO-SI合金材料
公开(公告)号：US20130019997A1
公开(公告)日：2013-01-24
申请号：US13637731
申请日：2011-03-25
申请人： Yasuhiro Okafuji
发明人： Yasuhiro Okafuji
IPC分类号： C22C9/00 , C22F1/08
CPC分类号： H01B1/026 , C22C1/10 , C22C9/00 , C22C9/06 , C22F1/00 , C22F1/08
摘要： A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm2 having diameters of from 0.20 μm or more to less than 1.00 μm, having a grain size of 10 μm or less, an electrical conductivity of 60% IACS or more, and good bending workability. The above alloy material contains 10 to 1,000 second phase particles per mm2 having diameters of from 1.00 to 5.00 μm, the 0.2% yield strength may be 600 MPa or more, the temperature of hot heating performed after casting and before solution treatment is a temperature that is 45° C. or more higher than the solution treatment temperature selected below, the cooling rate from the temperature at the start of hot rolling to 600° C. is 100° C./min or lower, the solution treatment temperature is selected from (50×Co wt %+775)° C. or more to (50×Co wt %+825)° C. or less, and can be manufactured employing aging treatment after solution treatment preferably at 450 to 650° C. for 1 to 20 hours.
摘要翻译：适合于电子电气设备的材料的铜合金材料，例如具有优异的弯曲加工性并且能够显示高导电性的可移动连接器的材料通过含有1.5-2.5重量％的Co和0.3至 0.7重量％的Co / Si元素比率为3.5〜5.0，含有每平方毫米直径为0.20微米以上且小于1.00微米的3000〜150,000的第二相粒子，粒径为10μm以下，电导率为60％IACS以上，弯曲加工性良好。上述合金材料含有直径为1.00〜5.00μm的每1mm 2的10〜1000个第二相粒子，0.2％屈服强度可以为600MPa以上，铸造后和固溶处理前的热加热温度为比以下选择的固溶处理温度高45℃以上，从热轧开始至600℃的冷却速度为100℃/分钟以下，固溶处理温度选自（50×Co wt％+ 775）℃以上至（50×Cowt％+ 825）℃以下，并且可以在固溶处理后优选在450〜650℃下进行时效处理而制造1 至20小时。

9. 发明授权

US10056166B2 Copper-cobalt-silicon alloy for electrode material 有权
公开(公告)号：US10056166B2
公开(公告)日：2018-08-21
申请号：US13818455
申请日：2011-08-24
申请人： Yasuhiro Okafuji
发明人： Yasuhiro Okafuji
IPC分类号： C22C9/00 , C22C9/06 , C22F1/08 , H01B1/02 , C22C9/10
CPC分类号： H01B1/026 , C22C9/00 , C22C9/06 , C22C9/10 , C22F1/08 , Y10T428/12014
摘要： Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≤Co/Si≤5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

10. 发明申请

US20130284323A1 Cu-Co-Si-Zr ALLOY MATERIAL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： Cu-Co-Si-Zr合金材料及其制造方法
公开(公告)号：US20130284323A1
公开(公告)日：2013-10-31
申请号：US13979103
申请日：2012-01-12
申请人： Yasuhiro Okafuji
发明人： Yasuhiro Okafuji
IPC分类号： C22F1/08 , C22C9/06
CPC分类号： C22F1/08 , C22C9/06 , H01B1/026
摘要： The present invention relates to a Cu—Co—Si—Zr alloy material which contains 1.0-2.5 wt % of Co, 0.2-0.7 wt % of Si and 0.001-0.5 wt % of Zr with the elemental ratio Co/Si being 3.5-5.0. The Cu—Co—Si—Zr alloy material contains second phase particles having a diameter of 0.20 μm or more but less than 1.00 μm at a density of 3,000-500,000 particles/mm2, and has a crystal grain size of 10 μm or less, an electrical conductivity of 60% IACS or more and good bending workability. The alloy material can be produced by setting the temperature of heating that is carried out after casting and before a solution heat treatment to a temperature that is higher than the later-described solution heat treatment temperature by 45° C. or more, by setting the cooling rate from the start temperature of hot rolling to 600° C. to 100° C./min or less, and by selecting the solution heat treatment temperature from (50× Co wt %+775)° C. to (50× Co wt %+825)° C. (inclusive). The aging treatment after the solution heat treatment is preferably carried out at 450-650° C. for 1-20 hours.
摘要翻译：本发明涉及一种Cu-Co-Si-Zr合金材料，其包含1.0-2.5重量％的Co，0.2-0.7重量％的Si和0.001-0.5重量％的Zr，元素比Co / Si为3.5- 5.0。 Cu-Co-Si-Zr合金材料的密度为3000-500,000个/ mm 2，包含直径为0.20μm以上且小于1.00μm的第二相粒子，其结晶粒径为10μm以下，电导率为60％IACS以上，弯曲加工性良好。合金材料可以通过将铸造后进行的加热温度和固溶热处理之前的加热温度设定为比后述的固溶热处理温度高45℃以上的温度，从热轧开始温度到600℃〜100℃/分钟以下的冷却速度，通过从（50×Co wt％+ 775）℃选择固溶热处理温度至（50×Co wt％+ 825）℃（含）。固溶热处理后的时效处理优选在450〜650℃进行1-20小时。

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