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1. 发明申请

US20130157451A1 METHODS OF FORMING GATE STRUCTURES FOR REDUCED LEAKAGE 有权
标题翻译：形成用于减少泄漏的门结构的方法
公开(公告)号：US20130157451A1
公开(公告)日：2013-06-20
申请号：US13331055
申请日：2011-12-20
申请人： Wuu-Cherng Lin , Fangyun Richter , Che Ta Hsu , Wen Sun Wu
发明人： Wuu-Cherng Lin , Fangyun Richter , Che Ta Hsu , Wen Sun Wu
IPC分类号： H01L21/3205 , G06F17/50
CPC分类号： G06F17/5081
摘要： Integrated circuits containing transistors are provided. A transistor may include a gate structure formed over an associated well region. The well region may be actively biased and may serve as a body terminal. The well region of one transistor may be formed adjacent to a gate structure of a neighboring transistor. If the gate structure of the neighboring transistor and the well region of the one transistor are both actively biased and are placed close to one another, substantial leakage may be generated. Computer-aided design tools may be used to identify actively driven gate terminals and well regions and may be used to determine whether each gate-well pair is spaced sufficiently far from one another. If a gate-well pair is too close, the design tools may locate an existing gate cut layer and extend the existing gate cut layer to cut the actively driven gate structure.
摘要翻译：提供了包含晶体管的集成电路。晶体管可以包括形成在相关联的阱区上的栅极结构。阱区可以被主动偏置并且可以用作身体终端。一个晶体管的阱区可以邻近相邻晶体管的栅极结构形成。如果相邻晶体管的栅极结构和一个晶体管的阱区都被主动偏置并且彼此靠近放置，则可能产生大量的泄漏。可以使用计算机辅助设计工具来识别主动驱动的栅极端子和阱区域，并且可以用于确定每个栅极 - 阱对是否彼此间隔得足够远。如果栅极阱对太靠近，则设计工具可以定位现有的栅极切割层并延伸现有的栅极切割层以切割主动驱动的栅极结构。

2. 发明授权

US08217464B2 N-well/P-well strap structures 有权
标题翻译： N井/ P井带结构
公开(公告)号：US08217464B2
公开(公告)日：2012-07-10
申请号：US12851805
申请日：2010-08-06
申请人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
发明人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
IPC分类号： H01L29/78
CPC分类号： H01L21/823493 , H01L21/32055 , H01L21/76224 , H01L21/823475 , H01L21/823481 , H01L21/823871 , H01L21/823892 , H01L27/0207 , H01L29/7833
摘要： Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.
摘要翻译：公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。

3. 发明申请

US20120032276A1 N-WELL/P-WELL STRAP STRUCTURES 有权
标题翻译： N-WELL / P-WELL STRAP STRUCTURES
公开(公告)号：US20120032276A1
公开(公告)日：2012-02-09
申请号：US12851805
申请日：2010-08-06
申请人： Dustin Do , Andy Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
发明人： Dustin Do , Andy Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L21/823493 , H01L21/32055 , H01L21/76224 , H01L21/823475 , H01L21/823481 , H01L21/823871 , H01L21/823892 , H01L27/0207 , H01L29/7833
摘要： Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.
摘要翻译：公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。

4. 发明授权

US09449962B2 N-well/P-well strap structures 有权
标题翻译： N井/ P井带结构
公开(公告)号：US09449962B2
公开(公告)日：2016-09-20
申请号：US13814590
申请日：2011-08-04
申请人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
发明人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
IPC分类号： H01L27/04 , H01L21/8234 , H01L21/8238 , H01L27/02 , H01L27/092 , H01L29/78
CPC分类号： H01L27/04 , H01L21/823493 , H01L21/823892 , H01L27/0207 , H01L27/092 , H01L29/7833
摘要： Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.
摘要翻译：公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带来实现的较低要求。

5. 发明授权

US08921217B2 Methods of forming gate structures for reduced leakage 有权
标题翻译：形成栅极结构以减少泄漏的方法
公开(公告)号：US08921217B2
公开(公告)日：2014-12-30
申请号：US13331055
申请日：2011-12-20
申请人： Wuu-Cherng Lin , Fangyun Richter , Che Ta Hsu , Wen Sun Wu
发明人： Wuu-Cherng Lin , Fangyun Richter , Che Ta Hsu , Wen Sun Wu
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： G06F17/5081
摘要： Integrated circuits containing transistors are provided. A transistor may include a gate structure formed over an associated well region. The well region may be actively biased and may serve as a body terminal. The well region of one transistor may be formed adjacent to a gate structure of a neighboring transistor. If the gate structure of the neighboring transistor and the well region of the one transistor are both actively biased and are placed close to one another, substantial leakage may be generated. Computer-aided design tools may be used to identify actively driven gate terminals and well regions and may be used to determine whether each gate-well pair is spaced sufficiently far from one another. If a gate-well pair is too close, the design tools may locate an existing gate cut layer and extend the existing gate cut layer to cut the actively driven gate structure.
摘要翻译：提供了包含晶体管的集成电路。晶体管可以包括形成在相关联的阱区上的栅极结构。阱区可以被主动偏置并且可以用作身体终端。一个晶体管的阱区可以邻近相邻晶体管的栅极结构形成。如果相邻晶体管的栅极结构和一个晶体管的阱区都被主动偏置并且彼此靠近放置，则可能产生大量的泄漏。可以使用计算机辅助设计工具来识别主动驱动的栅极端子和阱区域，并且可以用于确定每个栅极 - 阱对是否彼此间隔得足够远。如果栅极阱对太靠近，则设计工具可以定位现有的栅极切割层并延伸现有的栅极切割层以切割主动驱动的栅极结构。

6. 发明申请

US20130140640A1 N-WELL/P-WELL STRAP STRUCTURES 审中-公开
标题翻译： N-WELL / P-WELL STRAP STRUCTURES
公开(公告)号：US20130140640A1
公开(公告)日：2013-06-06
申请号：US13814590
申请日：2011-08-04
申请人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin
发明人： Dustin Do , Andy L. Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin
IPC分类号： H01L27/04
CPC分类号： H01L27/04 , H01L21/823493 , H01L21/823892 , H01L27/0207 , H01L27/092 , H01L29/7833
摘要： Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.
摘要翻译：公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带来实现的较低要求。

7. 发明申请

US20120261738A1 N-Well/P-Well Strap Structures 审中-公开
标题翻译： N井/ P井带结构
公开(公告)号：US20120261738A1
公开(公告)日：2012-10-18
申请号：US13538438
申请日：2012-06-29
申请人： Dustin Do , Andy Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
发明人： Dustin Do , Andy Lee , Giles V. Powell , Bradley Jensen , Swee Aun Lau , Wuu-Cherng Lin , Thomas H. White
IPC分类号： H01L29/788
CPC分类号： H01L27/0207 , H01L21/823814 , H01L21/823828 , H01L21/823871 , H01L21/823878
摘要： Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.
摘要翻译：公开了N阱或P阱带结构的实施例，其通过在一个或多个浮动多晶硅栅极指的两侧形成带而获得较低的空间要求。

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