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1. 发明申请

US20200274106A1 OLED DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20200274106A1
公开(公告)日：2020-08-27
申请号：US16492162
申请日：2019-04-08
申请人： Lei WANG , Wenxu XIANYU , Wenliang GONG , Xiaowen HUANG , Zesheng CHEN
发明人： Lei WANG , Wenxu XIANYU , Wenliang GONG , Xiaowen HUANG , Zesheng CHEN
IPC分类号： H01L51/52 , H01L27/32 , H01L51/00 , H01L51/56 , G06F3/045
摘要： An organic light emitting diode (OLED) display device includes an OLED display panel, a first insulating layer disposed on the OLED display panel, a first metal layer disposed on the first insulating layer, a second insulating layer disposed on the first metal layer and the first insulating layer, a second metal layer disposed on the second insulating layer, a black matrix disposed on the second metal layer, a hard mask disposed on the black matrix, and color resists disposed on the OLED display panel. The OLED display panel includes sub-pixels. Openings extend through the second metal layer, the black matrix, and the hard mask and are positioned corresponding to the sub-pixels. Each color resist is disposed in the openings. The present invention can effectively eliminate reflective light under strong light, and provide a manufacturing process implemented with a small number of masks at a lower product cost.

2. 发明申请

US20130161587A1 GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
公开(公告)号：US20130161587A1
公开(公告)日：2013-06-27
申请号：US13475098
申请日：2012-05-18
申请人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
发明人： Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
IPC分类号： H01L29/16 , H01L29/786 , H01L21/336
CPC分类号： H01L29/78684 , H01L27/1266 , H01L29/1606 , H01L29/66045 , H01L29/66742 , H01L29/78603
摘要： A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

3. 发明申请

US20110057195A1 POLY-SI THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME 有权
公开(公告)号：US20110057195A1
公开(公告)日：2011-03-10
申请号：US12947002
申请日：2010-11-16
申请人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
发明人： Huaxiang YIN , Takashi NOGUCHI , Hyuk LIM , Wenxu XIANYU , Hans S. CHO
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.

4. 发明授权

US07859054B2 Poly-Si thin film transistor and organic light-emitting display having the same 有权
标题翻译：聚硅薄膜晶体管和有机发光显示器
公开(公告)号：US07859054B2
公开(公告)日：2010-12-28
申请号：US11561572
申请日：2006-11-20
申请人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Takashi Noguchi , Hyuk Lim , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L27/12 , H01L29/78609 , H01L29/78696
摘要： A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
摘要翻译：薄膜晶体管包括具有非线性电子移动路径的Si基通道，设置在沟道两侧的源极和漏极，设置在沟道上方的栅极，介于通道和栅极之间的绝缘体，以及支撑通道的基板，分别设置在通道的两侧的源极和漏极。

5. 发明授权

US07842994B2 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
标题翻译：具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法
公开(公告)号：US07842994B2
公开(公告)日：2010-11-30
申请号：US12007037
申请日：2008-01-04
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L29/788
CPC分类号： H01L27/0688 , H01L21/8221 , H01L27/11521 , H01L27/11551 , H01L29/7854
摘要： A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.
摘要翻译：提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。该器件可以包括从半导体衬底向上突出的活性鳍片。可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。至少一个第一控制栅极线可以在有源鳍上交叉。层间绝缘层可以形成在至少一个第一控制栅极线上。多晶硅鳍可以形成在层间介电层上。可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

6. 发明申请

US20100200834A1 Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
标题翻译：结晶纳米线基板及其制造方法以及使用其制造薄膜晶体管的方法
公开(公告)号：US20100200834A1
公开(公告)日：2010-08-12
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/775 , H01L29/04 , H01L29/02 , H01L27/12
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法。制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。

7. 发明授权

US07511381B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07511381B2
公开(公告)日：2009-03-31
申请号：US11248620
申请日：2005-10-13
申请人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02598 , H01L21/02532 , H01L21/02667 , H01L21/2026 , H01L27/1281 , H01L29/66772
摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided. The TFT includes a transparent substrate, an insulating layer on a region of the transparent substrate, a monocrystalline silicon layer, which includes source, drain, and channel regions, on the insulating layer and a gate insulating film and a gate electrode on the channel region of the monocrystalline silicon layer.
摘要翻译：提供薄膜晶体管（TFT）及其制造方法。 TFT包括透明基板，在透明基板的区域上的绝缘层，在绝缘层上包括源极，漏极和沟道区的单晶硅层，以及沟道区上的栅极绝缘膜和栅极电极的单晶硅层。

8. 发明授权

US07479442B2 Method of manufacturing single crystal Si film 有权
标题翻译：制造单晶Si膜的方法
公开(公告)号：US07479442B2
公开(公告)日：2009-01-20
申请号：US11071175
申请日：2005-03-04
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L21/461
CPC分类号： H01L21/76254
摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.
摘要翻译：提供制造单晶Si膜的方法。该方法包括：制备其上形成有第一氧化物层的Si衬底和形成有第二氧化物层的绝缘衬底; 通过从所述第一氧化物层上方注入氢离子，从所述Si衬底的表面形成预定深度的分隔层; 将绝缘基板接合到Si衬底，使得第一氧化物层接触第二氧化物层; 以及通过从绝缘基板上方照射激光束切割分隔层，在绝缘基板上形成具有预定厚度的单晶硅膜。因此，可以在绝缘基板上形成具有预定厚度的单晶Si膜。

9. 发明申请

US20080118754A1 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure 有权
标题翻译：单晶硅棒制造方法和单晶硅棒结构
公开(公告)号：US20080118754A1
公开(公告)日：2008-05-22
申请号：US11976009
申请日：2007-10-19
申请人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
发明人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
IPC分类号： C30B13/06 , B32B9/00
CPC分类号： C30B29/06 , C30B13/24 , C30B25/02 , C30B29/60 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02664 , H01L21/02675 , H01L29/42392 , H01L29/78696 , Y10T428/2962
摘要： A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
摘要翻译：制造单晶硅棒的方法可以包括在衬底上形成绝缘层，在绝缘层中形成孔，选择性地生长孔中的硅，在孔和绝缘层上形成硅层，形成棒在相对于孔的非径向的方向上在硅层上形成图案，并且通过照射形成棒图案的硅层上的激光束来熔化硅层并使硅层结晶，从而在硅层上产生成核位置对应于孔的位置。根据该方法，可以形成没有缺陷的单晶硅棒。

10. 发明申请

US20080099875A1 Structure of strained silicon on insulator and method of manufacturing the same 失效
公开(公告)号：US20080099875A1
公开(公告)日：2008-05-01
申请号：US12003040
申请日：2007-12-19
申请人： Young-soo Park , Wenxu Xianyu , Takashi Noguchi
发明人： Young-soo Park , Wenxu Xianyu , Takashi Noguchi
IPC分类号： H01L29/00
CPC分类号： H01L21/76259 , H01L21/32134 , H01L21/76256 , H01L27/1266 , H01L29/7842 , H01L29/78603 , H01L29/78687 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer.

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