会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
    • 制造取向控制单晶线的方法及其制造具有该晶体管的晶体管的方法
    • US07566364B2
    • 2009-07-28
    • US11483586
    • 2006-07-11
    • Wenxu XianyuYoung-Soo ParkTakashi NoguchiHans S. ChoXiaoxin ZhangHuaxiang Yin
    • Wenxu XianyuYoung-Soo ParkTakashi NoguchiHans S. ChoXiaoxin ZhangHuaxiang Yin
    • C30B25/04
    • C30B29/06C30B25/005C30B29/08C30B29/60
    • Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.
    • 可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。 该方法可以包括:在衬底上形成模板层,模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔,孔设置在模板层中的第一侧表面和第二侧表面之间,并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。 纳米线可以由例如Si或SiGe的结晶材料制成,并且可以与基底平行地形成。 可以形成其取向可以被控制的更高质量的纳米线。 可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。