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1. 发明授权

US07842994B2 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
标题翻译：具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法
公开(公告)号：US07842994B2
公开(公告)日：2010-11-30
申请号：US12007037
申请日：2008-01-04
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L29/788
CPC分类号： H01L27/0688 , H01L21/8221 , H01L27/11521 , H01L27/11551 , H01L29/7854
摘要： A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.
摘要翻译：提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。该器件可以包括从半导体衬底向上突出的活性鳍片。可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。至少一个第一控制栅极线可以在有源鳍上交叉。层间绝缘层可以形成在至少一个第一控制栅极线上。多晶硅鳍可以形成在层间介电层上。可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

2. 发明申请

US20080118754A1 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure 有权
标题翻译：单晶硅棒制造方法和单晶硅棒结构
公开(公告)号：US20080118754A1
公开(公告)日：2008-05-22
申请号：US11976009
申请日：2007-10-19
申请人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
发明人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
IPC分类号： C30B13/06 , B32B9/00
CPC分类号： C30B29/06 , C30B13/24 , C30B25/02 , C30B29/60 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02664 , H01L21/02675 , H01L29/42392 , H01L29/78696 , Y10T428/2962
摘要： A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
摘要翻译：制造单晶硅棒的方法可以包括在衬底上形成绝缘层，在绝缘层中形成孔，选择性地生长孔中的硅，在孔和绝缘层上形成硅层，形成棒在相对于孔的非径向的方向上在硅层上形成图案，并且通过照射形成棒图案的硅层上的激光束来熔化硅层并使硅层结晶，从而在硅层上产生成核位置对应于孔的位置。根据该方法，可以形成没有缺陷的单晶硅棒。

3. 发明申请

US20060292313A1 Methods of forming a more highly-oriented silicon layer and substrate having the same 有权
标题翻译：形成更高取向硅层的方法和具有该硅层的基板的方法
公开(公告)号：US20060292313A1
公开(公告)日：2006-12-28
申请号：US11473067
申请日：2006-06-23
申请人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
发明人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
IPC分类号： C09K19/00
CPC分类号： C30B29/06 , Y10T428/10
摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
摘要翻译：提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。该方法可用于制造具有较高载流子迁移率的半导体器件。

4. 发明申请

US20100208368A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20100208368A1
公开(公告)日：2010-08-19
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： G02B7/02
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

5. 发明授权

US08508009B2 Microlens and an image sensor including a microlens 失效
标题翻译：微透镜和包括微透镜的图像传感器
公开(公告)号：US08508009B2
公开(公告)日：2013-08-13
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L27/146 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

6. 发明授权

US08187905B2 Method of forming a microlens and a method for manufacturing an image sensor 失效
标题翻译：形成微透镜的方法和图像传感器的制造方法
公开(公告)号：US08187905B2
公开(公告)日：2012-05-29
申请号：US12805821
申请日：2010-08-20
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

7. 发明申请

US20110008920A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20110008920A1
公开(公告)日：2011-01-13
申请号：US12805821
申请日：2010-08-20
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L33/00 , H01L31/18
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

8. 发明授权

US07566364B2 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same 有权
标题翻译：制造取向控制单晶线的方法及其制造具有该晶体管的晶体管的方法
公开(公告)号：US07566364B2
公开(公告)日：2009-07-28
申请号：US11483586
申请日：2006-07-11
申请人： Wenxu Xianyu , Young-Soo Park , Takashi Noguchi , Hans S. Cho , Xiaoxin Zhang , Huaxiang Yin
发明人： Wenxu Xianyu , Young-Soo Park , Takashi Noguchi , Hans S. Cho , Xiaoxin Zhang , Huaxiang Yin
IPC分类号： C30B25/04
CPC分类号： C30B29/06 , C30B25/005 , C30B29/08 , C30B29/60
摘要： Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.
摘要翻译：可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。该方法可以包括：在衬底上形成模板层，模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔，孔设置在模板层中的第一侧表面和第二侧表面之间，并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。纳米线可以由例如Si或SiGe的结晶材料制成，并且可以与基底平行地形成。可以形成其取向可以被控制的更高质量的纳米线。可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。

9. 发明申请

US20080026547A1 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device 有权
标题翻译：形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
公开(公告)号：US20080026547A1
公开(公告)日：2008-01-31
申请号：US11713738
申请日：2007-03-05
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
摘要翻译：形成多晶硅图案的方法可以包括在下层上形成非晶硅图案; 在覆盖所述非晶硅图案的所述基板上形成覆盖层; 使用准分子激光退火工艺多晶结晶非晶硅图案; 并去除覆盖层。

10. 发明授权

US08405062B2 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device 有权
标题翻译：形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
公开(公告)号：US08405062B2
公开(公告)日：2013-03-26
申请号：US11713738
申请日：2007-03-05
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L47/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
摘要翻译：形成多晶硅图案的方法可以包括在下层上形成非晶硅图案; 在覆盖所述非晶硅图案的所述基板上形成覆盖层; 使用准分子激光退火工艺多晶结晶非晶硅图案; 并去除覆盖层。

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