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1. 发明授权

US06567454B1 Coupled-resonator vertical-cavity lasers with two active gain regions 有权
标题翻译：具有两个有源增益区域的耦合谐振器垂直腔激光器
公开(公告)号：US06567454B1
公开(公告)日：2003-05-20
申请号：US09847177
申请日：2001-05-01
申请人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
发明人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
IPC分类号： H01S3082
CPC分类号： H01S5/426 , H01S5/0622 , H01S5/1021 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S5/4087
摘要： A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.
摘要翻译：已经开发了一类新型的耦合谐振器垂直腔半导体激光器。这些激光器具有包含有源激光介质区域的多个谐振腔，产生具有广泛新颖特性的多端子激光器部件。

2. 发明授权

US06608846B1 Bistable laser device with multiple coupled active vertical-cavity resonators 有权
标题翻译：双稳态激光器件，具有多个耦合的有源垂直腔谐振器
公开(公告)号：US06608846B1
公开(公告)日：2003-08-19
申请号：US09846874
申请日：2001-05-01
申请人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
发明人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
IPC分类号： H01S330
CPC分类号： H01S5/426 , H01S5/0622 , H01S5/1021 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S5/4087
摘要： A new class of bistable coupled-resonator vertical-cavity semiconductor laser devices has been developed. These bistable laser devices can be switched, either electrically or optically, between lasing and non-lasing states. A switching signal with a power of a fraction of a milliwatt can change the laser output of such a device by a factor of a hundred, thereby enabling a range of optical switching and data encoding applications.
摘要翻译：已经开发了一类新型的双稳态耦合谐振器垂直腔半导体激光器件。这些双稳态激光器件可以在激光和非激光状态之间以电或光学方式进行切换。功率为百万分之一的开关信号可以将这种器件的激光输出改变百倍，从而实现一定范围的光学切换和数据编码应用。

3. 发明授权

US4730325A Two-dimensional phase locked semiconductor laser array 失效
标题翻译：二维锁相半导体激光阵列
公开(公告)号：US4730325A
公开(公告)日：1988-03-08
申请号：US840620
申请日：1986-03-17
申请人： Weng W. Chow
发明人： Weng W. Chow
IPC分类号： H01S5/18 , H01S5/42 , H01S3/19 , H01S3/08
CPC分类号： H01S5/42 , H01S5/18
摘要： A phase locked two-dimensional semiconductor laser array is disclosed that emits a unified wavefront using columns of individual lasers, each laser having a slant mirror between it and other lasers in its column. The individual lasers are all evanescently coupled to the neighboring lasers. The slant mirrors reflect the light from the lasers next to it upwards out of the face of the array. The phase locking is accomplished by the evanescent wave coupling. The plane (uniform) wavefront is accomplished by the design of the array in which: each laser in an i.sup.th column forms an optical path length of x.sub.i with the slant mirror adjacent to it; and the optical path length between mirrors and lasers in the (i+l).sup.th column is given by: x.sub.i =x.sub.i+l .+-.n(.lambda./2) where .lambda. equals a measure of wavelength of the light transmitted out of the array, and n is an odd integer.
摘要翻译：公开了一种锁相二维半导体激光器阵列，其使用各个激光器列发射统一的波阵面，每个激光器在其与列中的其它激光器之间具有倾斜镜。单个激光器全部消逝地耦合到相邻的激光器。倾斜的镜子将来自激光器的光反射到阵列的表面之上。相位锁定是通过ev逝波耦合实现的。平面（均匀）波前通过阵列的设计来实现，其中：第i列中的每个激光器与邻近其的倾斜镜形成xi的光程长度; 并且第（i + 1）列中的反射镜和激光器之间的光程长度由下式给出：xi = xi + 1 +/- n（λ/ 2）其中λ等于从阵列传输的光的波长的量度，n为奇整数。

4. 发明授权

US06600761B1 Semiconductor laser with multiple lasing wavelengths 有权
标题翻译：具有多个激光波长的半导体激光器
公开(公告)号：US06600761B1
公开(公告)日：2003-07-29
申请号：US09847178
申请日：2001-05-01
申请人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
发明人： Arthur J. Fischer , Kent D. Choquette , Weng W. Chow
IPC分类号： H01S500
CPC分类号： H01S5/426 , H01S5/0622 , H01S5/1021 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S5/4087
摘要： A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.
摘要翻译：已经开发了一类新型的多端子垂直腔半导体激光器部件。这些多端子激光器部件可以在不同的激光波长之间以电或光学方式切换，或者可以在多个波长下同时切换。

5. 发明授权

US06504859B1 Light sources based on semiconductor current filaments 有权
标题翻译：基于半导体电流灯丝的光源
公开(公告)号：US06504859B1
公开(公告)日：2003-01-07
申请号：US09489243
申请日：2000-01-21
申请人： Fred J. Zutavern , Guillermo M. Loubriel , Malcolm T. Buttram , Alan Mar , Wesley D. Helgeson , Martin W. O'Malley , Harold P. Hjalmarson , Albert G. Baca , Weng W. Chow , G. Allen Vawter
发明人： Fred J. Zutavern , Guillermo M. Loubriel , Malcolm T. Buttram , Alan Mar , Wesley D. Helgeson , Martin W. O'Malley , Harold P. Hjalmarson , Albert G. Baca , Weng W. Chow , G. Allen Vawter
IPC分类号： H01S500
CPC分类号： H01S5/04 , H01S5/0425 , H01S5/3013
摘要： The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.
摘要翻译：本发明提供一种能够产生高峰值功率输出而不是注入，电子束或光泵浦的新型半导体光源。本发明能够产生高质量的相干或非相干光发射。不同于基于p-n结的常规半导体激光器，本发明基于当前的灯丝。本发明提供一种由当前灯丝内的电子 - 空穴等离子体形成的光源。电子空穴等离子体可以是几百微米的直径和几厘米长。目前的灯丝可以光学地或与电子束一起启动，但是可以在大的绝缘区域上被电泵浦。可以在高增益光导半导体开关中产生当前的灯丝。由本发明提供的光源具有潜在的大体积，因此具有从单个（相干）半导体激光器可获得的每脉冲潜在的大能量或峰值功率。像其他半导体激光器一样，这些光源将发射在带隙能量附近的波长（对于GaAs 875nm或近红外线）。本发明的即时潜在应用包括高能量，短脉冲，紧凑，低成本的激光器和其它非相干光源。

6. 发明授权

US08687665B1 Mutually injection locked lasers for enhanced frequency response 有权
标题翻译：相互注入锁定的激光器，用于增强频率响应
公开(公告)号：US08687665B1
公开(公告)日：2014-04-01
申请号：US13233221
申请日：2011-09-15
申请人： Anna Tauke-Pedretti , Erik J. Skogen , Gregory A. Vawter , Weng W. Chow
发明人： Anna Tauke-Pedretti , Erik J. Skogen , Gregory A. Vawter , Weng W. Chow
IPC分类号： H01S3/082 , H01S5/00
CPC分类号： H01S5/06256 , H01S5/0265 , H01S5/0425 , H01S5/1021 , H01S5/22 , H01S5/4006
摘要： Semiconductor light-emitting devices; methods of forming semi-conductor light emitting devices, and methods of operating semi-conductor light emitting devices are provided. A semiconductor light-emitting device includes a first laser section monolithically integrated with a second laser section on a common substrate. Each laser section has a phase section, a gain section and at least one distributed Bragg reflector (DBR) structure. The first laser section and the second laser section are optically coupled to permit optical feedback therebetween. Each phase section is configured to independently tune a respective one of the first laser section and second laser section relative to each other.
摘要翻译：半导体发光器件; 提供形成半导体发光器件的方法以及半导体发光器件的操作方法。半导体发光器件包括与公共衬底上的第二激光器部分单片集成的第一激光器部分。每个激光器部分具有相位部分，增益部分和至少一个分布式布拉格反射器（DBR）结构。第一激光部分和第二激光部分被光学耦合以允许它们之间的光学反馈。每个相位部分被配置为相对于彼此独立地调谐第一激光部分和第二激光部分中的相应一个。

7. 发明授权

US5712865A Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof 失效
标题翻译：不敏感的垂直腔表面发射激光器及其制造方法
公开(公告)号：US5712865A
公开(公告)日：1998-01-27
申请号：US535597
申请日：1995-09-28
申请人： Weng W. Chow , Kent D. Choquette , Paul L. Gourley
发明人： Weng W. Chow , Kent D. Choquette , Paul L. Gourley
IPC分类号： H01S5/068 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2301/04 , H01S5/02469 , H01S5/1221 , H01S5/2213 , H01S5/3418 , H01S5/3432
摘要： A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.
摘要翻译：不敏感的垂直腔表面发射激光器（VCSEL）及其制造方法。温度不敏感的VCSEL包括在谐振腔内的量子阱有源区域，有源区域具有增益谱，具有对其增益和平坦化增益谱的高阶子带（n> / = 2）贡献，从而大大减少 VCSEL在感兴趣的温度范围内的工作特性的任何变化。用于形成温度不敏感VCSEL的方法包括以下步骤：提供衬底并在其上形成多个层以提供第一和第二分布布拉格反射镜（DBR）反射镜叠层，其中夹在其间的有源区域，该有源区域包括至少一个提供具有高阶子带（n> / = 2）增益贡献的增益谱的量子阱层，以及具有预定层组成和厚度的DBR反射镜叠层，用于在与增益光谱基本重叠的预定波长范围内提供空腔谐振。

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