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    • 2. 发明授权
    • Process for the chemical modification of aluminum oxide supported
rhodium catalysts and associated automotive catalyst
    • 氧化铝负载铑催化剂和相关汽车催化剂的化学改性方法
    • US5028575A
    • 1991-07-02
    • US515385
    • 1990-04-27
    • John T. Yates, Jr.Dilip K. PaulTodd H. Ballinger
    • John T. Yates, Jr.Dilip K. PaulTodd H. Ballinger
    • B01D53/94B01J23/46
    • B01D53/945B01J23/464Y02T10/22
    • A process for chemically removing surface hydroxyl groups present on an aluminum oxide supported rhodium catalyst that is suitable for use as an automotive catalyst in controlling automative exhaust emissions is disclosed. The process includes removing the hydroxyl groups from the aluminum oxide supported catalyst by silation at a temperature preferably equal to or greater than about 450 K so that the conversion of active metallic rhodium Rh.sub.x (0) to oxidized rhodium species Rh.sup.(I) cannot substantially occur by reduction of the active hydroxyl groups. The silation is carried out by exposing the aluminum oxide supported rhodium catalyst to a gas phase alkylhalosilane. Subsequent to the silation, evacuation of the alkylhalosilane treated aluminum oxide supported rhodium catalyst is effected to remove substantially all unreacted alkylhalosilane. An associated catalyst suitable for use in automotive catalytic converter technology for environmental protection is also provided.
    • 公开了一种用于化学去除存在于氧化铝负载的铑催化剂上的表面羟基的方法,其适用于控制汽车尾气排放物中的汽车催化剂。 该方法包括通过在优选等于或大于约450K的温度下进行硅酸化从氧化铝负载的催化剂中除去羟基,使得活性金属铑Rhx(0)转化成氧化铑类Rh(I)不能基本上发生 通过还原活性羟基。 通过将氧化铝负载的铑催化剂暴露于气相烷基卤代硅烷来进行硅酸盐化。 在沉淀之后,进行烷基卤代硅烷处理的氧化铝负载的铑催化剂的抽真空以除去基本上所有未反应的烷基卤硅烷。 还提供了适用于环境保护的汽车催化转化器技术的相关催化剂。
    • 5. 发明授权
    • Method for fluorination of diamond surfaces and associated product
    • 金刚石表面及相关产品的氟化方法
    • US5840426A
    • 1998-11-24
    • US798311
    • 1997-02-07
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • B05D3/06B05D5/08C01B31/06C04B41/50C23C16/26C23C16/56G11B5/725G11B5/84B32B9/00
    • C23C16/26B05D3/06B05D5/08C01B31/065C04B41/5019C04B41/5093C23C16/56G11B5/725G11B5/8408Y10T428/30
    • An improved method for the fluorination of a diamond surfaces comprises condensing a layer of perfluorinated alkyl iodides consisting of C.sub.n F.sub.2n+1 I (where n is a positive integer from 1 to 13) on the diamond surface, producing perfluorinated alkyl free radicals by photodecomposing C--I bonds of said perfluorinated alkyl iodides on the diamond surface, reacting the diamond surface with photochemically produced perfluorinated alkyl radicals thereby anchoring photochemically induced photofragments of the perfluorinated alkyl iodides to the diamond surface forming a perfluorinated alkyl layer, and decomposing the perfluorinated alkyl layer on the diamond surface to cause the fluorination of the diamond surface by atomic F. The method achieves greater than one fluorine atom per surface carbon atom chemisorbed on the diamond using C.sub.4 F.sub.9 I. A fluorinated diamond made by the above method is also disclosed wherein a fluorinating perfluoroalkyl iodide, C.sub.n F.sub.2n+1 I, is selected from the group consisting of n=1 to 5. In one case, the fluorinating perfluoroalkyl iodide is C.sub.4 F.sub.9 I. In another case, it is CF.sub.3 I.
    • 用于金刚石表面氟化的改进方法包括将由CnF2n + 1I(其中n为1至13的正整数)组成的全氟化烷基碘层凝集在金刚石表面上,通过光致分解CI键来产生全氟化烷基自由基 所述金刚石表面上的全氟化烷基碘化物使金刚石表面与光化学产生的全氟化烷基反应,从而将全氟化烷基碘化物的光化学诱导的光致斑片锚定到形成全氟化烷基层的金刚石表面,并将金刚石表面上的全氟化烷基层分解成 导致金刚石表面被原子F氟化。该方法使用C4F9I在金刚石上化学吸附表面碳原子上大于一个氟原子。 还公开了通过上述方法制备的氟化金刚石,其中氟化全氟烷基碘CnF2n + 1I选自n = 1至5.在一种情况下,氟化全氟烷基碘为C 4 F 9 I。 在另一种情况下,它是CF3I。
    • 7. 发明授权
    • Method for lubrication of diamond-like carbon surfaces
    • 类金刚石表面的润滑方法
    • US5698272A
    • 1997-12-16
    • US764392
    • 1996-12-11
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • Vincent S. SmentkowskiJohn T. Yates, Jr.
    • B05D3/06B05D5/08C01B31/06C04B41/50C23C16/26C23C16/56G11B5/725G11B5/84
    • B05D3/06B05D5/08C01B31/065C04B41/5019C04B41/5093C23C16/26C23C16/56G11B5/725G11B5/8408
    • An improved method for the lubrication of diamond-like carbon surfaces comprises condensing a layer of perflourinated alkyl halides of the formula C.sub.n F.sub.2n+1 X, wherein n is a positive integer from 1 to 13 and X is selected from I, Br and Cl, on the diamond-like carbon surface. Perflourinated alkyl free radicals are then produced by photodecomposing C--X bonds of said perflourinated alkyl halides on the surface. The diamond-like carbon surface is reacted with photochemically produced perflourinated alkyl radicals thereby anchoring photochemically induced photofragments of the perflourinated alkyl halides to the surface forming a perflourinated alkyl layer. The perfluorinated alkyl layer is preferably decomposed on the diamond-like carbon surface to cause the fluorination of the surface by atomic F. The method preferably achieves greater than one fluorine atom per surface carbon atom chemisorbed on the diamond-like carbon. The fluorination process produces lubricated diamond-like carbon surfaces that are particularly suitable for computer hard disks.
    • 用于润滑类金刚石碳表面的改进方法包括将式CnF2n + 1X的全氟化烷基卤化物层,其中n是1至13的正整数,X选自I,Br和Cl, 类金刚石表面。 然后通过在所述表面上光刻分解所述全氟化烷基卤化物的C-X键来产生经过饱和的烷基自由基。 将类金刚石碳表面与光化学产生的全氟化烷基反应,从而将全氟化烷基卤化物的光化学诱导的光片锚定到形成全氟化烷基层的表面。 全氟化烷基层优选在类金刚石碳表面上分解,以通过原子F使表面氟化。该方法优选在金刚石状碳上化学吸附表面碳原子上大于一个氟原子。 氟化过程产生特别适用于计算机硬盘的润滑的类金刚石碳表面。
    • 10. 发明授权
    • Method for forming pure group III-V compound semi-conductor films
    • 纯III-V族复合半导体薄膜的制备方法
    • US5573592A
    • 1996-11-12
    • US361838
    • 1994-12-22
    • Andreas H ubnerScott R. LucasWilliam D. PartlowW. J. ChoykeJ. A. Sch aferJohn T. Yates, Jr.
    • Andreas H ubnerScott R. LucasWilliam D. PartlowW. J. ChoykeJ. A. Sch aferJohn T. Yates, Jr.
    • C30B25/02C30B25/20
    • C30B25/02C30B29/40C30B29/406
    • This invention discloses a method of synthesizing a Group III-V compound semi-conducting film from a Group III metal alkyl and Group V hydride wherein the method comprises providing a vacuum chamber in which the synthesis takes place, adsorbing at least one monolayer of said Group III metal alkyl on an inert surface, backfilling the chamber with a Group V hydride, adsorbing the Group V hydride on the inert surface, providing atomic hydrogen atoms from electron-induced dissociation of Group V hydride adsorbed on the surface, inducing an electron-induced depletion of carbon at a rate which is dependent on the pressure of the Groups V hydride, retaining substantially all Group III metal on the surface and providing a thermally stable Group III-V compound semi-conducting film on the inert SiO.sub.2 surface. Methods for synthesizing a multilayer Group III-V semi-conducting film and specifically a GaN film are also disclosed, along with the apparatus for the synthesis of Group III-V compound semi-conducting films.
    • 本发明公开了一种由III族金属烷基和V族氢化物合成III-V族化合物半导电膜的方法,其中所述方法包括提供其中发生合成的真空室,吸附所述组的至少一个单层 III族金属烷基在惰性表面上,用V族氢化物回填室,将V族氢化物吸附在惰性表面上,从吸附在表面上的V族氢化物的电子诱导解离提供原子氢原子,诱导电子诱导 以取决于V族氢化物的压力的速率消耗碳,并在表面上保留基本上所有的III族金属,并在惰性SiO 2表面上提供热稳定的III-V族化合物半导电膜。 还公开了用于合成III-V族化合物半导体膜的多层III-V族半导体膜,特别是GaN膜的方法。