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1. 发明授权

US08148230B2 Method of making damascene diodes using selective etching methods 有权
标题翻译：使用选择性蚀刻方法制造镶嵌二极管的方法
公开(公告)号：US08148230B2
公开(公告)日：2012-04-03
申请号：US12656306
申请日：2010-01-25
申请人： Vance Dunton , Raghuveer S. Makala , Michael Chan
发明人： Vance Dunton , Raghuveer S. Makala , Michael Chan
IPC分类号： H01L21/20
CPC分类号： H01L27/101 , H01L21/32134 , H01L27/1021 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16
摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the first conductivity type semiconductor layer in the plurality of openings, and selectively etching the second conductivity type semiconductor layer using an upper surface of the first conductivity type semiconductor layer as a stop to form a recess in the plurality of openings.
摘要翻译：制造半导体器件的方法包括提供包含多个开口的绝缘层，在多个开口中形成第一导电类型半导体层，在多个开口中的第一导电类型半导体层上形成第二导电类型半导体层并且使用第一导电类型半导体层的上表面作为停止来选择性地蚀刻第二导电类型半导体层，以在多个开口中形成凹部。

2. 发明授权

US06565416B2 Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process 有权
标题翻译：激光干涉测量端点检测与无窗抛光垫的化学机械抛光工艺
公开(公告)号：US06565416B2
公开(公告)日：2003-05-20
申请号：US09805860
申请日：2001-03-13
申请人： Samuel Vance Dunton , Yizhi Xiong
发明人： Samuel Vance Dunton , Yizhi Xiong
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/12 , B24D7/12
摘要： A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad. Non-scattered light is absorbed by the first polishing pad. The wafer is also polished at a second station. During polishing a final endpoint is detected. The final endpoint is detected by generating optical radiation by a second light source. The second optical radiation travels through a translucent area in a surface of a second platen and travels through a window embedded in a second polishing pad. After being reflected by the wafer, the optical radiation returns through the window embedded in the second polishing pad, through the translucent area in the surface of the second platen, to a second optical radiation detector.
摘要翻译：多台板化学机械抛光系统用于抛光晶片。晶片在第一站被抛光。在抛光期间，检测到一个端点。通过由第一光源产生光辐射来检测端点。第一光辐射穿过第一压板的表面中的半透明区域并且穿过第一抛光垫。在被晶片反射之后，光辐射通过第一抛光垫通过半透明窗口返回到第一光学辐射检测器。第一抛光垫具有均匀的表面，因为第一抛光垫的表面的任何部分都不包括透明材料，通过该透明材料，源自第一光源的非散射光辐射可以通过第一光学辐射检测器检测。穿过第一抛光垫并由第一光学辐射检测器检测的光辐射是由第一抛光垫内的夹杂物散射的雾。非散射光被第一抛光垫吸收。晶片也在第二站抛光。在抛光期间，检测到最终的终点。通过由第二光源产生光辐射来检测最终端点。第二光辐射穿过第二压板的表面中的半透明区域并且穿过嵌入第二抛光垫中的窗口。在被晶片反射之后，光学辐射通过嵌入第二抛光垫中的窗口通过第二压板的表面中的半透明区域返回到第二光学辐射检测器。

3. 发明授权

US06196900B1 Ultrasonic transducer slurry dispenser 有权
标题翻译：超声波传感器浆液分配器
公开(公告)号：US06196900B1
公开(公告)日：2001-03-06
申请号：US09390455
申请日：1999-09-07
申请人： Liming Zhang , Samuel Vance Dunton , Milind Ganesh Weling
发明人： Liming Zhang , Samuel Vance Dunton , Milind Ganesh Weling
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B1/04 , B24B41/061 , B24B57/02
摘要： The present invention is an ultrasonic transducer slurry dispensing device and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device includes a slurry dispensing slot, a slurry chamber coupled and an ultrasonic transducer. The slurry chamber receives the slurry and transports it to the slurry dispensing slots that apply slurry to a polishing pad. The ultrasonic transducer transmits ultrasonic energy to the slurry. The transmitted ultrasonic energy permits an ultrasonic transducer slurry dispensing device and method of the present invention to achieve a relatively consistent removal rate and a smoother polished wafer surface by facilitating particle disbursement, polishing pad conditioning and uniform slurry distribution.
摘要翻译：本发明是一种用于高效分散浆料的超声波换能器浆料分配装置和方法。本发明利用超声波能量来促进IC晶片制造工艺中有效的浆料应用，以允许在IC晶片制造期间减少制造时间和浆料消耗。在一个实施例中，化学机械抛光（CMP）超声换能器浆料分配器装置包括浆料分配槽，耦合的浆料室和超声换能器。浆料室接收浆料并将其输送到将浆料施加到抛光垫的浆料分配槽。超声波换能器将超声波能量传递给浆料。透射的超声波能量允许本发明的超声波换能器浆料分配装置和方法通过促进粒子分配，抛光垫调节和均匀的浆料分布来实现相对一致的去除速率和更光滑的抛光晶片表面。

4. 发明授权

US6028013A Moisture repellant integrated circuit dielectric material combination 有权
标题翻译：防潮集成电路电介质材料组合
公开(公告)号：US6028013A
公开(公告)日：2000-02-22
申请号：US306239
申请日：1999-05-06
申请人： Rao V. Annapragada , Samuel Vance Dunton , Milind Ganesh Weling , Subhas Bothra
发明人： Rao V. Annapragada , Samuel Vance Dunton , Milind Ganesh Weling , Subhas Bothra
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L21/44
CPC分类号： H01L21/02129 , H01L21/02131 , H01L21/022 , H01L21/02274 , H01L21/02362 , H01L21/31625 , H01L21/31629 , H01L21/76801 , H01L21/76829 , H01L21/76837 , H01L21/31053 , H01L21/76819
摘要： A method of making an inter-metal oxide layer over a patterned metallization layer of a substrate, and the resulting structure having the inter-metal oxide layer are provided. The method includes depositing a fluorine doped high density plasma (HDP) oxide layer over the patterned metallization layer. The fluorine doped HDP oxide layer is configured to evenly deposit in high aspect ratio regions of the patterned metallization layer. The method also includes depositing a plasma enhanced chemical vapor deposition (PECVD) oxide layer over the fluorine doped HDP oxide layer. The PECVD oxide layer is doped with a phosphorous material. A CMP operation is then performed over the PECVD oxide layer to remove topographical oxide variations, such that the CMP operation will be configured to preferably leave at least a coating of the PECVD oxide layer over the HDP oxide layer. In this example, the phosphorous material in the PECVD oxide is configured to assist in creating a substantial moisture barrier over the fluorine doped HDP oxide layer and thus protect metallization lines from corrosion. In an alternative example, a non-conductive, highly moisture resistant barrier layer can be deposited in between the fluorine doped HDP oxide layer and the PECVD oxide.
摘要翻译：提供了在衬底的图案化金属化层上形成金属间氧化物层的方法，并且提供了所得到的具有金属间氧化物层的结构。该方法包括在图案化的金属化层上沉积氟掺杂的高密度等离子体（HDP）氧化物层。氟掺杂的HDP氧化物层被配置为均匀沉积在图案化金属化层的高纵横比区域中。该方法还包括在氟掺杂的HDP氧化物层上沉积等离子体增强化学气相沉积（PECVD）氧化物层。 PECVD氧化物层掺杂有磷材料。然后在PECVD氧化物层上执行CMP操作以去除形貌氧化物变化，使得CMP操作将被配置为优选地将PECVD氧化物层的至少一层涂层留在HDP氧化物层上。在该实施例中，PECVD氧化物中的磷材料被配置成有助于在氟掺杂的HDP氧化物层上产生显着的湿气阻挡层，从而保护金属化线不受腐蚀。在替代实例中，可以在氟掺杂的HDP氧化物层和PECVD氧化物之间沉积非导电，高度防潮的阻挡层。

5. 发明授权

US08329512B2 Patterning method for high density pillar structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US08329512B2
公开(公告)日：2012-12-11
申请号：US13463260
申请日：2012-05-03
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/82
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

6. 发明授权

US07927977B2 Method of making damascene diodes using sacrificial material 有权
标题翻译：使用牺牲材料制造镶嵌二极管的方法
公开(公告)号：US07927977B2
公开(公告)日：2011-04-19
申请号：US12458543
申请日：2009-07-15
申请人： Raghuveer S. Makala , Vance Dunton , Yoichiro Tanaka , Steven Maxwell , Tong Zhang , Steven J. Radigan
发明人： Raghuveer S. Makala , Vance Dunton , Yoichiro Tanaka , Steven Maxwell , Tong Zhang , Steven J. Radigan
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L27/1021 , H01L27/101 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/16
摘要： A method of making a semiconductor device includes forming a first layer comprising a seed material over an underlying layer, forming a second layer comprising a sacrificial material over the first layer, the sacrificial material being different from the seed material, patterning the first layer and the second layer into a plurality of separate features, forming an insulating filling material between the plurality of the separate features, removing the sacrificial material from the separate features to form a plurality of openings in the insulating filling material such that the seed material is exposed in the plurality of openings, and growing a semiconductor material on the exposed seed material in the plurality of openings.
摘要翻译：制造半导体器件的方法包括在下层上形成包括种子材料的第一层，在第一层上形成包含牺牲材料的第二层，牺牲材料与种子材料不同，图案化第一层和在多个单独的特征之间形成绝缘填充材料，从所述分离的特征中移除所述牺牲材料以在所述绝缘填充材料中形成多个开口，使得所述种子材料暴露在所述第二层中多个开口，以及在多个开口中的暴露的种子材料上生长半导体材料。

7. 发明授权

US06103634A Removal of inorganic anti-reflective coating using fluorine etch process 有权
标题翻译：使用氟蚀刻工艺去除无机抗反射涂层
公开(公告)号：US06103634A
公开(公告)日：2000-08-15
申请号：US215071
申请日：1998-12-18
申请人： Samuel Vance Dunton
发明人： Samuel Vance Dunton
IPC分类号： H01L21/027 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/0276
摘要： A method for fabricating semiconductor devices that allows for the integration of anti-reflective coatings into the fabrication process. A method for removing an inorganic anti-reflective coating is disclosed that includes the step of exposing the layer of inorganic anti-reflective coating to atomic fluorine. An asher is used to generate fluorine atoms from NF.sub.3 precursor gas. The NF.sub.3 precursor gas is mixed with an inert carrier such as helium. In one embodiment, sequential etch steps are performed in an asher so as to sequentially remove both a layer of photoresist and a layer of inorganic anti-reflective coating.
摘要翻译：一种制造半导体器件的方法，其允许将抗反射涂层集成到制造工艺中。公开了一种去除无机抗反射涂层的方法，其包括将无机抗反射涂层层暴露于原子氟的步骤。用Asher从NF3前驱体气体中产生氟原子。 NF3前驱体气体与诸如氦的惰性载体混合。在一个实施例中，顺序蚀刻步骤在灰化器中进行，以顺序地去除光致抗蚀剂层和无机抗反射涂层。

8. 发明申请

US20120276744A1 Patterning Method for High Density Pillar Structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US20120276744A1
公开(公告)日：2012-11-01
申请号：US13463260
申请日：2012-05-03
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/302
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

9. 发明授权

US08241969B2 Patterning method for high density pillar structures 有权
公开(公告)号：US08241969B2
公开(公告)日：2012-08-14
申请号：US13216688
申请日：2011-08-24
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L21/82
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.

10. 发明申请

US20110306174A1 Patterning Method for High Density Pillar Structures 有权
标题翻译：高密度柱结构图案化方法
公开(公告)号：US20110306174A1
公开(公告)日：2011-12-15
申请号：US13216688
申请日：2011-08-24
申请人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
发明人： Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen , Raghuveer Makala , Vance Dunton
IPC分类号： H01L45/00
CPC分类号： H01L21/0274 , H01L21/0337 , H01L27/1021 , Y10S438/947 , Y10S438/948 , Y10S438/949
摘要： A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.
摘要翻译：制造器件的方法包括在牺牲层上形成第一光致抗蚀剂层，图案化第一光致抗蚀剂层以形成第一光致抗蚀剂特征，使得第一光致抗蚀剂特征不溶于溶剂，在第一光致抗蚀剂特征上形成第二光致抗蚀剂层，第二光致抗蚀剂层以形成第二光致抗蚀剂特征，在第一和第二光致抗蚀剂特征上形成间隔层，蚀刻间隔层以形成间隔物特征并暴露第一和第二光致抗蚀剂特征，在间隔物特征之间形成第三光致抗蚀剂特征，去除间隔物特征，并且使用第一，第二和第三光致抗蚀剂特征作为掩模来图案化牺牲层以形成牺牲特征。

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