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1. 发明授权

US5942057A Process for producing TiAl intermetallic compound-base alloy materials having properties at high temperatures 失效
标题翻译：具有高温性能的TiAl金属间化合物基合金材料的制造方法
公开(公告)号：US5942057A
公开(公告)日：1999-08-24
申请号：US714049
申请日：1997-04-11
申请人： Toshihiro Hanamura , Youji Mizuhara , Keizo Hashimoto
发明人： Toshihiro Hanamura , Youji Mizuhara , Keizo Hashimoto
IPC分类号： B22D11/06 , B22F3/22 , C22C1/02 , C22C1/03 , C22C14/00 , C22C32/00 , C22F1/18
CPC分类号： B22F3/225 , B22D11/0622 , B22D11/0697 , C22C1/02 , C22C1/03 , C22C14/00 , C22C32/00 , C22C32/0031 , C22C32/0047 , C22C32/0073 , B22F2998/00
摘要： A TiAl intermetallic compound-base alloy material having excellent strength properties at high temperatures and ductility, characterized by comprising: a fine alumina (Al.sub.2 O.sub.3) dispersed so as to give an O.sub.2 concentration of 1000 to 5000 ppm by weight and in a particle diameter of 200 to 500 nm; a boride (TiB.sub.2) dispersed to give a B concentration of 0.1 to 10 at % and in a particle diameter of not more than 500 nm; 1 to 3 at % of at least one of Cr, Mn, and V; and TiAl having a Ti content of 50 to 53 at % and an Al content of 47 to 50 at %, said TiAl intermetallic compound-base alloy material having been directly cast at a cooling rate of 10.sup.3 to 10.sup.5 .degree. C./sec and a process for producing the same. According to the present invention, exhaust valves for automobiles and materials for engine turbines for jet airplanes and the like having excellent tensile strength at high temperatures and ductility at high temperatures and room temperature are provided.
摘要翻译： PCT No.PCT / JP95 / 00387 Sec。 371日期1997年04月11日 102（e）日期1997年4月11日PCT提交1995年3月9日PCT公布。出版物WO95 / 24511 日期1995年9月14日一种TiAl金属间化合物基合金材料，其在高温和延展性方面具有优异的强度性能，其特征在于包括：分散以使O 2浓度为1000-5000ppm重量的细氧化铝（Al 2 O 3）粒径为200〜500nm; 硼化物（TiB 2）分散，得到B浓度为0.1〜10at％，粒径为500nm以下; 1〜3at％的Cr，Mn和V中的至少一种; TiAl的Ti含量为50〜53原子％，Al含量为47〜50原子％的TiAl金属间化合物系合金材料，以103〜105℃/秒的冷却速度直接铸造，生产方法根据本发明，提供了用于汽车的排气门和用于喷气式飞机的发动机涡轮机的材料等，其在高温下具有优异的拉伸强度和在高温和室温下的延展性。

2. 发明授权

US5898563A Chip composite electronic component with improved moisture resistance and method of manufacturing the same 失效
标题翻译：具有改善的耐湿性的片式复合电子元件及其制造方法
公开(公告)号：US5898563A
公开(公告)日：1999-04-27
申请号：US864969
申请日：1997-05-29
申请人： Toshihiro Hanamura
发明人： Toshihiro Hanamura
IPC分类号： H01C17/24 , H01C7/00 , H01G4/33 , H01G4/40 , H03H1/02 , H05K1/16 , H05K3/28 , H01G4/06
CPC分类号： H01G4/40 , H05K1/162 , H05K1/167 , H05K3/28
摘要： Disclosed are a structure and a method of manufacture of a chip composite electronic component with improved moisture resistance. A pair of end electrodes are formed on a surface of the substrate at opposite end portions thereof. An intermediate electrode is formed at a location between the end electrodes on the surface of the substrate. The intermediate electrode includes a lower electrode, a resistor electrode and a pad electrode formed continuous therebetween. Another element is formed on the lower electrode so as to be electrically connected between the lower electrode and one of the end electrodes. A resistance element is formed between the other of the end electrodes and the resistor electrode. A glass layer is formed to cover another element, the resistance element and the pad electrode. A protective layer of a synthetic resin is formed to cover the entire surface of the glass layer and part of each the end electrode.
摘要翻译：公开了具有改善的耐湿性的芯片复合电子部件的制造结构和方法。一对端电极形成在基板的相对端部的表面上。中间电极形成在基板的表面上的端电极之间的位置处。中间电极包括下电极，电阻电极和连续形成的焊盘电极。在下电极上形成另一元件，以便电连接在下电极和一个端电极之间。在另一个端电极和电阻电极之间形成电阻元件。形成玻璃层以覆盖另一元件，电阻元件和焊盘电极。形成合成树脂的保护层以覆盖玻璃层的整个表面和每个端电极的一部分。

3. 发明授权

US5815065A Chip resistor device and method of making the same 失效
标题翻译：片式电阻器件及其制造方法
公开(公告)号：US5815065A
公开(公告)日：1998-09-29
申请号：US779108
申请日：1997-01-06
申请人： Toshihiro Hanamura
发明人： Toshihiro Hanamura
IPC分类号： H01C7/00 , H01C17/00 , H01C1/012
CPC分类号： H01C17/006
摘要： A chip resistor device includes an insulating chip substrate having a top surface formed with a resistor film which is covered by a protective coating. The top surface of the substrate is also formed with a pair of terminal electrodes provided at both ends of the chip substrate. Each of the terminal electrodes includes a main top electrode layer formed on the top surface of the chip substrate in electrical conduction with the resistor film, an auxiliary top electrode layer formed on the main top electrode layer, a side electrode layer formed on a corresponding end face of the chip substrate, and a plated metal electrode layer formed on the auxiliary top electrode layer and the side electrode layer. The auxiliary top electrode layer is formed with a cutout at which the plated metal electrode layer is held in direct contact with the main top electrode layer.
摘要翻译：芯片电阻器件包括绝缘芯片基板，其具有形成有被保护涂层覆盖的电阻膜的顶表面。基板的顶面也形成有设置在芯片基板的两端的一对端子电极。每个端子电极包括形成在芯片基板的顶表面上的与电阻器膜导通的主顶电极层，形成在主顶电极层上的辅助顶电极层，形成在相应端部的侧电极层并且在辅助顶电极层和侧电极层上形成电镀金属电极层。辅助顶电极层形成有电镀金属电极层保持与主顶电极层直接接触的切口。

4. 发明授权

US5379190A Chip-type composite electronic part and manufacturing method therefor 失效
标题翻译：片式复合电子部件及其制造方法
公开(公告)号：US5379190A
公开(公告)日：1995-01-03
申请号：US021762
申请日：1993-02-24
申请人： Toshihiro Hanamura , Kaotu Sakai
发明人： Toshihiro Hanamura , Kaotu Sakai
IPC分类号： H01C7/00 , H01C1/16 , H01C13/02 , H01C17/00 , H01C17/24 , H01C17/242 , H05K1/16
CPC分类号： H01C1/16 , Y10T29/49082 , Y10T29/49101 , Y10T29/49155 , Y10T29/49156 , Y10T29/49789
摘要： When resistor elements, common electrodes and individual electrodes are formed on a substrate, a disconnected portion, i.e., open portion is formed in one of the common electrodes. After the respective resistor elements are trimmed, the disconnected portion of the one common electrode is bridged by a conductor.
摘要翻译：当在基板上形成电阻元件，公共电极和单独电极时，在一个公共电极中形成断开部分，即开放部分。在各个电阻元件被修整之后，一个公共电极的断开部分由导体桥接。

5. 发明授权

US5348594A Ti-Al intermetallic compound with Se 失效
标题翻译： Ti-Al金属间化合物
公开(公告)号：US5348594A
公开(公告)日：1994-09-20
申请号：US58840
申请日：1993-05-06
申请人： Toshihiro Hanamura , Ryuji Uemori , Mitsuru Tanino , Jin-ichi Takamura
发明人： Toshihiro Hanamura , Ryuji Uemori , Mitsuru Tanino , Jin-ichi Takamura
IPC分类号： C22C14/00
CPC分类号： C22C14/00
摘要： A Ti--Al intermetallic compound has a compressibility of at least 25% at room temperature and a superior high temperature oxidation resistance and consists essentially of about 40 to 52 atomic percent of Ti, about 48 to 60 atomic percent of Al, and 10 to 1000 atomic ppm of at least one of P, As, Se, or Te.
摘要翻译： Ti-Al金属间化合物在室温下具有至少25％的压缩性和优异的高温抗氧化性，并且基本上由约40至52原子％的Ti，约48至60原子％的Al和10至1000 P，As，Se或Te中的至少一个的原子ppm。

6. 发明授权

US5331305A Chip network resistor 失效
标题翻译：芯片网络电阻
公开(公告)号：US5331305A
公开(公告)日：1994-07-19
申请号：US51091
申请日：1993-04-21
申请人： Shigeru Kanbara , Toshihiro Hanamura
发明人： Shigeru Kanbara , Toshihiro Hanamura
IPC分类号： H01C1/14 , H01C13/02
CPC分类号： H01C1/14
摘要： A chip network resistor includes a plurality of discrete electrodes and common electrodes which are connected to a plurality of resistance elements according to a predetermined pattern. The configuration of the common electrodes is larger more than that of the discrete electrodes. Thereby, the contact resistance between the terminal of a measuring instrument and a common electrode is reducible when a value of resistance is measured.
摘要翻译：芯片网络电阻器包括根据预定图案连接到多个电阻元件的多个分立电极和公共电极。公共电极的构造比离散电极的构造大。因此，当测量电阻值时，测量仪器的端子和公共电极之间的接触电阻可以减小。

7. 发明授权

US5232661A .gamma. and .beta. dual phase TiAl based intermetallic compound alloy having superplasticity 失效
标题翻译：具有超塑性的γ和β双相TiAl基金属间化合物合金
公开(公告)号：US5232661A
公开(公告)日：1993-08-03
申请号：US742846
申请日：1991-08-08
申请人： Munetsugu Matsuo , Naoya Masahashi , Keizo Hashimoto , Toshihiro Hanamura , Hideki Fujii , Masao Kimura , Youji Mizuhara , Hiroo Suzuki
发明人： Munetsugu Matsuo , Naoya Masahashi , Keizo Hashimoto , Toshihiro Hanamura , Hideki Fujii , Masao Kimura , Youji Mizuhara , Hiroo Suzuki
IPC分类号： C22C14/00 , C22F1/00 , C22F1/18
CPC分类号： C22C14/00
摘要： This invention relates to TiAl based intermetallic compound alloy and process for producing; the object of this invention is to improve high temperature deformability. The alloy comprises basic components: Ti.sub.y AlCr.sub.x, wherein 1%.ltoreq.X.ltoreq.5%, 47.5%.ltoreq.Y.ltoreq.52%, and X+ 2Y.gtoreq.100%, and comprises a fine-grain structure with a .beta. phase precipitated on a grain boundary of equiaxed .gamma. grain having grain size of less than 30 .mu.m, and possessing a superplasticity such that the strain rate sensitivity factors (m value) is 0.40 or more and tensile elongation is 400% or more tested at 1200.degree. C. and a strain rate of 5.times.10.sup.-4 S.sup.-1.
摘要翻译：本发明涉及TiAl基金属间化合物合金及其制造方法。本发明的目的是提高高温变形性。该合金包括碱性组分：TiyAlCrx，其中1％，X = 5％，47.5％，Y = 52％，X + 2Y> / = 100％，并且包括具有在晶粒尺寸小于30μm的等轴γ晶粒的晶界上析出β相，并且具有超塑性，使得应变速率敏感性因子（m值）为0.40以上，拉伸伸长率为400％以上在1200℃，应变速率为5×10 -4 S -1。

8. 发明授权

US5928766A Chip-type composite part 失效
标题翻译：芯片型复合件
公开(公告)号：US5928766A
公开(公告)日：1999-07-27
申请号：US106144
申请日：1993-08-13
申请人： Toshihiro Hanamura
发明人： Toshihiro Hanamura
IPC分类号： H01C7/00 , H01C13/00 , H01G4/40 , H03H1/02 , B32B3/00
CPC分类号： H01G4/40 , Y10S428/901 , Y10T428/23 , Y10T428/24851 , Y10T428/24917 , Y10T428/24926
摘要： On the front surface of an insulating substrate, there are formed first and second terminal electrodes at one end portion of the substrate, a third terminal electrode at the other end portion, a resistor portion connected to the first and second terminal electrodes, and a capacitor portion connected to the second and third terminal electrodes. The capacitor portion has a multilayer structure consisting of a bottom electrode, dielectric layer and a top electrode.
摘要翻译：在绝缘基板的前表面上，在基板的一个端部形成有第一和第二端子电极，在另一端部形成第三端子电极，连接到第一和第二端子电极的电阻器部分，以及电容器连接到第二和第三端子电极的部分。电容器部分具有由底部电极，电介质层和顶部电极组成的多层结构。

9. 发明授权

US5699224A Thick-film capacitor and chip-type composite electronic component utilizing the same 失效
标题翻译：厚膜电容器和利用其的片式复合电子元件
公开(公告)号：US5699224A
公开(公告)日：1997-12-16
申请号：US735996
申请日：1996-10-23
申请人： Toshihiro Hanamura , Masanori Tanimura
发明人： Toshihiro Hanamura , Masanori Tanimura
IPC分类号： H01G4/40 , H01L27/01 , H01G4/005
CPC分类号： H01L27/013 , H01G4/40
摘要： Disclosed are a thick-film capacitor and a chip-type composite electronic component. A pair of end electrodes are formed on the insulator substrate. A lower electrode is formed on the insulator substrate. A dielectric layer is formed on the lower electrode. An upper electrode formed on the dielectric layer. One of the lower electrode and the upper electrode has a broad-width portion having a width wider than the remaining portion thereof. The one of the lower and upper electrode at the broad-width portion is directly connected to one of the end electrodes. The thick-film capacitor is provided with a capacitor electrode arranged to provide positive connection, even where the width of the capacitor electrode is determined narrow to meet a small capacitance value.
摘要翻译：公开了一种厚膜电容器和芯片型复合电子部件。在绝缘体基板上形成一对端电极。在绝缘体基板上形成下电极。电介质层形成在下电极上。形成在电介质层上的上电极。下电极和上电极中的一个具有宽度比其余部分宽的宽度部分。宽宽部分的下电极和上电极中的一个直接连接到一个端电极。厚膜电容器设置有电容电极，其布置成提供正连接，即使电容器电极的宽度被确定为窄以满足小的电容值。

10. 发明授权

US5256202A Ti-A1 intermetallic compound sheet and method of producing same 失效
标题翻译： Ti-A1金属间化合物片及其制造方法
公开(公告)号：US5256202A
公开(公告)日：1993-10-26
申请号：US752628
申请日：1991-08-23
申请人： Toshihiro Hanamura , Munetsugu Matsuo , Toshiaki Mizoguchi , Kenichi Miyazawa , Masao Kimura , Naoya Masahashi
发明人： Toshihiro Hanamura , Munetsugu Matsuo , Toshiaki Mizoguchi , Kenichi Miyazawa , Masao Kimura , Naoya Masahashi
IPC分类号： B22D11/06 , C22C14/00 , C22C21/00
CPC分类号： C22C14/00 , B22D11/0622 , B22D11/0697 , C22C21/00
摘要： The present invention provides a Ti--Al intermetallic compound sheet of a thickness in the range of 0.25 to 2.5 mm formed of a Ti--Al intermetallic compound of 40 to 53 atomic percent of Ti, 0.1 to 3 atomic percent of at least one of material selected from the group consisting of Cr, Mn, V and Fe, and the balance of Al, and a Ti--Al intermetallic compound sheet producing method comprising the steps of pouring a molten Ti--Al intermetallic compound of the foregoing composition into the mold of a twin drum continuous casting machine, casting and rapidly solidifying the molten Ti--Al intermetallic compound to produce a thin cast plate of a thickness in the range of 0.25 to 2.5 mm and, when necessary, subjecting the thin cast plate to annealing and HIP treating. The Ti--Al intermetallic compound sheet has excellent mechanical and surface properties.
摘要翻译： PCT No.PCT / JP90 / 01691 Sec。 371日期1991年8月23日 102（e）日期1991年8月23日PCT 1990年12月25日PCT PCT。出版物WO91 / 09697 日本1991年7月11日。本发明提供了由Ti-Al金属间化合物形成的厚度在0.25〜2.5mm范围内的Ti-Al金属间化合物片，其含量为40〜53原子％的Ti，0.1〜3原子选自Cr，Mn，V和Fe中的至少一种材料的余量以及Al的余量以及Ti-Al金属间化合物片材的制造方法，包括以下步骤：将熔融的Ti-Al金属间化合物将上述组成进入双滚筒连续铸造机的模具中，铸造并使熔融的Ti-Al金属间化合物快速固化，以产生厚度在0.25至2.5mm范围内的薄铸造板，并且当需要时，使薄的铸钢板进行退火和HIP处理。 Ti-Al金属间化合物片具有优异的机械和表面性能。

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