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    • 1. 发明申请
    • HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASHES OF LIGHT
    • 热处理装置通过用闪光灯照射基板来加热基板
    • US20120067864A1
    • 2012-03-22
    • US13229884
    • 2011-09-12
    • Tatsufumi KUSUDAToshiaki AOTANIShinji MIYAWAKI
    • Tatsufumi KUSUDAToshiaki AOTANIShinji MIYAWAKI
    • H05B1/00
    • H01L21/67115
    • When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.
    • 当半导体晶片被卤素灯预热时,半导体晶片的周边部分的温度低于其中心部分的温度。 在半导体晶片的中心附近设置的激光发射部分围绕半导体晶片的中心线旋转,同时激光从激光发射部分朝向半导体晶片的周边部分引导。 因此,离开激光发射部分的激光的照射点沿着半导体晶片的背面的周边部分旋转以画出圆形轨迹。 结果,半导体晶片在较低温度下的整个周边部分被均匀地加热。 这实现了半导体晶片的均匀的面内温度分布。
    • 2. 发明授权
    • Drum type image scanner
    • 鼓式图像扫描仪
    • US5317424A
    • 1994-05-31
    • US802094
    • 1991-12-04
    • Toshiaki Aotani
    • Toshiaki Aotani
    • H04N1/06H04N1/04
    • H04N1/0685H04N1/0657
    • A drum type image scanner includes a transparent cylinder 2, and a cylinder drive motor 16, which are concentrically and rigidly fixed with a bracket 18. The bracket 18 is fixed to a base 12 by connecting a key way 24 of the bracket 18 and another key way 42 of the base 12 with a key 46. An optical unit 10 is movable along a track rail 34 on the base 12. When the cylinder unit 4 and the optical unit 10 are attached to the base 12, the track rail 34 runs parallel to the axis of the cylinder 2 owing to the connection of the key ways 24 and 42. The structure eliminates troublesome adjustment for parallelism between the axis of the cylinder 2 and the track rail 34 and the concentricity of the cylinder 2 with the cylinder drive motor 16, thus simplifying attachment of the cylinder 2 to the drum type image scanner 1.
    • 鼓式图像扫描器包括透明圆柱体2和圆柱体驱动马达16,其与支架18同心且刚性地固定。托架18通过将托架18的键槽24和另一个 基座12的钥匙方式42具有钥匙46.光学单元10可沿基座12上的轨道34移动。当气缸单元4和光学单元10附接到基座12时,轨道轨道34运行 由于键槽24和42的连接,平行于气缸2的轴线。该结构消除了对气缸2的轴线和轨道轨道34之间的平行度以及气缸2与气缸驱动器的同心度的麻烦调整 电动机16,从而简化了气缸2与鼓式图像扫描器1的连接。
    • 3. 发明授权
    • Heat treatment apparatus for heating substrate by irradiating substrate with flashes of light
    • 通过用闪光照射基板来加热基板的热处理装置
    • US08624165B2
    • 2014-01-07
    • US13229884
    • 2011-09-12
    • Tatsufumi KusudaToshiaki AotaniShinji Miyawaki
    • Tatsufumi KusudaToshiaki AotaniShinji Miyawaki
    • F27D11/00F26B19/00
    • H01L21/67115
    • When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.
    • 当半导体晶片被卤素灯预热时,半导体晶片的周边部分的温度低于其中心部分的温度。 在半导体晶片的中心附近设置的激光发射部分围绕半导体晶片的中心线旋转,同时激光从激光发射部分朝向半导体晶片的周边部分引导。 因此,离开激光发射部分的激光的照射点沿着半导体晶片的背面的周边部分旋转以画出圆形轨迹。 结果,半导体晶片在较低温度下的整个周边部分被均匀地加热。 这实现了半导体晶片的均匀的面内温度分布。