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1. 发明申请

US20070275570A1 Heat Treatment Apparatus 审中-公开
标题翻译：热处理设备
公开(公告)号：US20070275570A1
公开(公告)日：2007-11-29
申请号：US10573025
申请日：2005-01-20
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Akira Morohashi , Keishin Yamazaki , Sadao Nakashima
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , H01L21/324 , H01L21/67309
摘要： A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.
摘要翻译：一种热处理装置，其中由支撑体支撑的基板之间的间隔减小，使得可以增加待处理的基板的数量。热处理装置具有用于处理基板的反应炉和用于在反应炉中多级支撑基板的支撑件。支撑件具有与基板接触的支撑板和用于支撑支撑板的支撑构件。支撑板和支撑构件在厚度方向上的至少一部分彼此重叠。

2. 发明授权

US08963051B2 Heat treatment apparatus and method of manufacturing substrates 有权
标题翻译：热处理装置及其制造方法
公开(公告)号：US08963051B2
公开(公告)日：2015-02-24
申请号：US11662573
申请日：2005-09-15
申请人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
发明人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
IPC分类号： F27B5/14 , F27D11/00 , C23C16/00 , H01L21/67
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
摘要翻译：一种热处理设备，其中喷嘴精确地设置在适配器上以防止喷嘴干扰其它部件，并且可以减少由于喷嘴的热膨胀而导致的破裂的可能性。热处理装置（10）设有用于处理基板（54）的反应管（42），用于支撑反应管（42）的石英接头（44），连接到适配器（44）的喷嘴）和用于在反应管（42）内供给处理气体的加热器（46），以及设置在反应管（42）的外侧的加热器（46）。喷嘴（66）在反应管（42）中连接到适配器（44）的上平面，喷嘴（66）的至少一部分与适配器（44）连接，由石英制成，其他喷嘴部件由碳化硅制成。

3. 发明申请

US20080190910A1 Heat Treatment Apparatus and Method of Manufacturing Substrates 有权
标题翻译：热处理设备及其制造方法
公开(公告)号：US20080190910A1
公开(公告)日：2008-08-14
申请号：US11662573
申请日：2005-09-15
申请人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
发明人： Tomoharu Shimada , Akira Morohashi , Kojiro Yokozawa , Keishin Yamazaki
IPC分类号： F27B5/14
CPC分类号： H01L21/67109
摘要： A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction lube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.
摘要翻译：一种热处理设备，其中喷嘴精确地设置在适配器上以防止喷嘴干扰其它部件，并且可以减少由于喷嘴的热膨胀而导致的破裂的可能性。热处理装置（10）设有用于处理基板（54）的反应管（42），用于支撑反应管（42）的石英接头（44），连接到适配器（44）的喷嘴）和用于在反应管（42）内供给处理气体的加热器（46），以及设置在反应管（42）的外侧的加热器（46）。喷嘴（66）在反应润滑油（42）中连接到适配器（44）的上平面，至少一部分喷嘴（66）并与适配器（44）连接的部分由石英制成，其他喷嘴部件由碳化硅制成。

4. 发明授权

US07667301B2 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 有权
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US07667301B2
公开(公告)日：2010-02-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

5. 发明申请

US20090186489A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20090186489A1
公开(公告)日：2009-07-23
申请号：US12382400
申请日：2009-03-16
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

6. 发明申请

US20070194411A1 Thermal Treatment Apparatus, Method For Manufacturing Semiconductor Device, And Method For Manufacturing Substrate 有权
标题翻译：热处理装置，制造半导体装置的方法和制造基板的方法
公开(公告)号：US20070194411A1
公开(公告)日：2007-08-23
申请号：US10528069
申请日：2003-09-26
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： H01L23/58
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基板支撑体30由主体部分56和支撑部分58形成。在主体部分56中，多个放置部分66平行延伸，支撑部分58设置在放置部分66上。基板68是放置在支撑部58上。支撑部58具有比基板的平坦面的面积小的面积，并且由厚度大于基板的厚度的硅板形成，使得热处理时的变形为减少支撑部分58由硅制成，并且在支撑部分58的基片放置面上形成涂有碳化硅（SiC）的层。

7. 发明授权

US07077913B2 Apparatus for fabricating a semiconductor device 有权
公开(公告)号：US07077913B2
公开(公告)日：2006-07-18
申请号：US10345190
申请日：2003-01-16
申请人： Tomoharu Shimada
发明人： Tomoharu Shimada
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67309 , C23C16/4583 , H01L21/67109 , H01L21/68707 , Y10S206/832
摘要： A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.

8. 发明授权

US5636535A Tag cover of compact disk for prevention of shoplifting 失效
标题翻译：光盘标签盖防止商店盗窃
公开(公告)号：US5636535A
公开(公告)日：1997-06-10
申请号：US272544
申请日：1994-07-11
申请人： Tomoharu Shimada
发明人： Tomoharu Shimada
IPC分类号： B65D85/57 , E05B65/00 , E05B73/00
CPC分类号： E05B73/0023 , Y10T70/5004 , Y10T70/5031
摘要： A new small sized tag cover for a compact disk to prevent shoplifting is developed. The shoplifting prevention tag is not easily damaged or removed from the compact disk housing case. Therefore, the compact disk is prevented from being stolen. The shoplifting prevention tag is recycled for subsequent use. The tag cover is comprised of a first connecting portion having a first engagement piece to be inserted into a first groove of a lid portion of the compact disk housing case. A second connecting portion having a second engagement piece is provided to be inserted into a second groove of the lid portion. A connecting portion is provided to retain the housing case in closed condition by clamping the housing case together with the first and second engagement pieces. A locking mechanism is provided to retain the lid portion in a closed condition. The shoplifting prevention tag is attached to either the first engagement portion, second engagement portion or the connecting portion so that the tag is not easily removed.
摘要翻译：开发了一种用于防止商店盗窃的新型小型标签盖。防盗标签不容易被损坏或从光盘外壳中移除。因此，防止了光盘被盗。商店预防标签被回收再利用。标签盖由具有第一接合片的第一连接部分组成，以便插入到光盘容纳盒的盖部分的第一槽中。具有第二接合件的第二连接部分设置成插入到盖部分的第二槽中。连接部分设置成通过将壳体与第一和第二接合件一起夹紧来将壳体保持在闭合状态。提供锁定机构以将盖部分保持在关闭状态。防盗标签安装在第一接合部分，第二接合部分或连接部分上，使得标签不容易去除。

9. 发明申请

US20100148415A1 Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate 审中-公开
标题翻译：热处理装置，半导体装置的制造方法以及基板的制造方法
公开(公告)号：US20100148415A1
公开(公告)日：2010-06-17
申请号：US12654837
申请日：2010-01-06
申请人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
发明人： Naoto Nakamura , Iwao Nakamura , Tomoharu Shimada , Kenichi Ishiguro , Sadao Nakashima
IPC分类号： B23Q3/00
CPC分类号： H01L21/67306 , H01L21/67098 , H01L21/67309
摘要： A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided.A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.
摘要翻译：热处理装置，半导体装置的制造方法以及基板的制造方法，其中，热处理时的基板中的滑动位错的发生减少，制造高品质的半导体装置，提供。基体支撑体由主体部分和支撑部分形成。在主体部分中，多个放置部分平行延伸，并且在放置部分上设置支撑部分。将基板放置在支撑部上。支撑部分具有比基板的平面的面积小的面积，并且由厚度大于基板厚度的硅板形成，从而减少热处理期间的变形。支撑部分由硅制成，并且在支撑部分的基片放置面上形成涂有碳化硅（SiC）的层。

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