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1. 发明授权

US08839054B2 Read only memory (ROM) with redundancy 有权
标题翻译：只读存储器（ROM）冗余
公开(公告)号：US08839054B2
公开(公告)日：2014-09-16
申请号：US13445187
申请日：2012-04-12
申请人： George M. Braceras , Albert M. Chu , Kevin W. Gorman , Michael R. Ouellette , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
发明人： George M. Braceras , Albert M. Chu , Kevin W. Gorman , Michael R. Ouellette , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
IPC分类号： G11C29/00
CPC分类号： G11C29/12 , G06F11/0793 , G11C17/00 , G11C29/4401 , G11C29/822
摘要： A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.
摘要翻译：提供了具有冗余性和使用方法的只读存储器（ROM）。具有冗余的ROM包括耦合到具有一个或多个冗余修复的修复电路的可编程阵列。一个或多个冗余修复包括字地址匹配逻辑块，数据I / O地址和三态缓冲器。字地址匹配逻辑块作为控制输入提供给三态缓冲器，并且将数据I / O地址作为输入提供给三态缓冲器。提供每个冗余修复的三态缓冲器的输出作为一个或多个逻辑器件的第一输入。提供ROM位单元阵列的一个或多个数据输出作为一个或多个逻辑器件中的相应一个的第二输入。

2. 发明申请

US20130211749A1 EMBEDDED PHOTON EMISSION CALIBRATION (EPEC) 有权
标题翻译：嵌入式光电子发射校准（EPEC）
公开(公告)号：US20130211749A1
公开(公告)日：2013-08-15
申请号：US13396775
申请日：2012-02-15
申请人： Albert M. Chu , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
发明人： Albert M. Chu , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
IPC分类号： G01R31/308 , G06F19/00
CPC分类号： G01R31/311
摘要： A semiconductor device structure is embedded within a semiconductor chip that calibrates a photon-emission luminosity scale by running multiple known currents through the device. The method comprises embedding at least one photon emission device in an integrated circuit having at least one functional device. A control current is applied to the at least one photon emission device. The photon emission intensity produced by the at least one photon emission device is captured. The current density of the at least one photon emission device is calculated. A test current is applied to the at least one functional device. The photon emission intensity produced by the at least one functional device is captured. The current density of the at least one functional device is estimated based on a comparison with the calculated current density of the at least one photon emission device.
摘要翻译：半导体器件结构嵌入半导体芯片内，通过运行多个已知电流通过器件来校准光子发射光度标度。该方法包括将至少一个光子发射装置嵌入到具有至少一个功能装置的集成电路中。控制电流被施加到至少一个光子发射装置。捕获由至少一个光子发射装置产生的光子发射强度。计算出至少一个光子发射装置的电流密度。测试电流被施加到所述至少一个功能装置。捕获由至少一个功能装置产生的光子发射强度。基于与计算出的至少一个光子发射装置的电流密度的比较来估计至少一个功能装置的电流密度。

3. 发明授权

US07397641B2 Apparatus and method for improved triggering and oscillation suppression of ESD clamping devices 失效
标题翻译：用于改善ESD钳位装置的触发和振荡抑制的装置和方法
公开(公告)号：US07397641B2
公开(公告)日：2008-07-08
申请号：US11276411
申请日：2006-02-28
申请人： Albert M. Chu , Robert J. Gauthier, Jr. , Junjun Li , Thomas W. Wyckoff
发明人： Albert M. Chu , Robert J. Gauthier, Jr. , Junjun Li , Thomas W. Wyckoff
IPC分类号： H02H9/00 , H02H1/00
CPC分类号： H01L27/0266
摘要： An apparatus for protecting an integrated circuit from electrostatic discharge (ESD) includes an RC trigger device configured between a pair of power rails, a first control path coupled to the RC trigger device, and a second control path coupled to the RC trigger device. A power clamp is configured between the power rails for discharging current from an ESD event, the power clamp having an input coupled to outputs of the first and second control paths, the power clamp independently controllable by the first and second control paths. The first and second control paths are further configured to prevent the power clamp from reactivating following an initial deactivation of the power clamp.
摘要翻译：用于保护集成电路免受静电放电（ESD）的装置包括RC触发装置，其配置在耦合到RC触发装置的一对电源轨，第一控制路径和耦合到RC触发装置的第二控制路径之间。功率钳被配置在用于从ESD事件放电的电源轨之间，功率钳具有耦合到第一和第二控制路径的输出的输入，功率钳由第一和第二控制路径独立地控制。第一和第二控制路径还被配置为防止在电源钳的初始去激活之后电源钳位被重新激活。

4. 发明授权

US07646573B2 Method for improved triggering and oscillation suppression of ESD clamping devices 失效
标题翻译：改善ESD钳位装置触发和振荡抑制的方法
公开(公告)号：US07646573B2
公开(公告)日：2010-01-12
申请号：US12133424
申请日：2008-06-05
申请人： Albert M. Chu , Robert J. Gauthier, Jr. , Junjun Li , Thomas W. Wyckoff
发明人： Albert M. Chu , Robert J. Gauthier, Jr. , Junjun Li , Thomas W. Wyckoff
IPC分类号： H02H9/00 , H02H1/00
CPC分类号： H01L27/0266
摘要： An apparatus for protecting an integrated circuit from electrostatic discharge (ESD) includes an RC trigger device configured between a pair of power rails, a first control path coupled to the RC trigger device, and a second control path coupled to the RC trigger device. A power clamp is configured between the power rails for discharging current from an ESD event, the power clamp having an input coupled to outputs of the first and second control paths, the power clamp independently controllable by the first and second control paths. The first and second control paths are further configured to prevent the power clamp from reactivating following an initial deactivation of the power clamp.
摘要翻译：用于保护集成电路免受静电放电（ESD）的装置包括RC触发装置，其配置在耦合到RC触发装置的一对电源轨，第一控制路径和耦合到RC触发装置的第二控制路径之间。功率钳被配置在用于从ESD事件放电的电源轨之间，功率钳具有耦合到第一和第二控制路径的输出的输入，功率钳由第一和第二控制路径独立地控制。第一和第二控制路径还被配置为防止在电源钳的初始去激活之后电源钳位被重新激活。

5. 发明申请

US20080232012A1 METHOD FOR IMPROVED TRIGGERING AND OSCILLATION SUPRESSION OF ESD CLAMPING DEVICES 失效
标题翻译：用于改善ESD钳位装置的触发和振荡抑制的方法
公开(公告)号：US20080232012A1
公开(公告)日：2008-09-25
申请号：US12133424
申请日：2008-06-05
申请人： Albert M. Chu , Robert J. Gauthier , Junjun Li , Thomas W. Wyckoff
发明人： Albert M. Chu , Robert J. Gauthier , Junjun Li , Thomas W. Wyckoff
IPC分类号： H02H9/00
CPC分类号： H01L27/0266
摘要： An apparatus for protecting an integrated circuit from electrostatic discharge (ESD) includes an RC trigger device configured between a pair of power rails, a first control path coupled to the RC trigger device, and a second control path coupled to the RC trigger device. A power clamp is configured between the power rails for discharging current from an ESD event, the power clamp having an input coupled to outputs of the first and second control paths, the power clamp independently controllable by the first and second control paths. The first and second control paths are further configured to prevent the power clamp from reactivating following an initial deactivation of the power clamp.
摘要翻译：用于保护集成电路免受静电放电（ESD）的装置包括RC触发装置，其配置在耦合到RC触发装置的一对电源轨，第一控制路径和耦合到RC触发装置的第二控制路径之间。功率钳被配置在用于从ESD事件放电的电源轨之间，功率钳具有耦合到第一和第二控制路径的输出的输入，功率钳由第一和第二控制路径独立地控制。第一和第二控制路径还被配置为防止在电源钳的初始去激活之后电源钳位被重新激活。

6. 发明授权

US09052356B2 Embedded photon emission calibration (EPEC) 有权
标题翻译：嵌入式光子发射校准（EPEC）
公开(公告)号：US09052356B2
公开(公告)日：2015-06-09
申请号：US13396775
申请日：2012-02-15
申请人： Albert M. Chu , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
发明人： Albert M. Chu , Ronald A. Piro , Daryl M. Seitzer , Rohit Shetty , Thomas W. Wyckoff
IPC分类号： G01R31/00 , G01R31/311
CPC分类号： G01R31/311
摘要： A semiconductor device structure is embedded within a semiconductor chip that calibrates a photon-emission luminosity scale by running multiple known currents through the device. The method comprises embedding at least one photon emission device in an integrated circuit having at least one functional device. A control current is applied to the at least one photon emission device. The photon emission intensity produced by the at least one photon emission device is captured. The current density of the at least one photon emission device is calculated. A test current is applied to the at least one functional device. The photon emission intensity produced by the at least one functional device is captured. The current density of the at least one functional device is estimated based on a comparison with the calculated current density of the at least one photon emission device.
摘要翻译：半导体器件结构嵌入半导体芯片内，通过运行多个已知电流通过器件来校准光子发射光度标度。该方法包括将至少一个光子发射装置嵌入到具有至少一个功能装置的集成电路中。控制电流被施加到至少一个光子发射装置。捕获由至少一个光子发射装置产生的光子发射强度。计算出至少一个光子发射装置的电流密度。测试电流被施加到所述至少一个功能装置。捕获由至少一个功能装置产生的光子发射强度。基于与计算出的至少一个光子发射装置的电流密度的比较来估计至少一个功能装置的电流密度。

7. 发明申请

US20130275821A1 READ ONLY MEMORY (ROM) WITH REDUNDANCY 有权
标题翻译：只读存储器（ROM）与冗余
公开(公告)号：US20130275821A1
公开(公告)日：2013-10-17
申请号：US13445187
申请日：2012-04-12
申请人： George M. BRACERAS , Albert M. CHU , Kevin W. Gorman , Michael R. OUELLETTE , Ronald A. PIRO , Daryl M. SEITZER , Rohit SHETTY , Thomas W. WYCKOFF
发明人： George M. BRACERAS , Albert M. CHU , Kevin W. Gorman , Michael R. OUELLETTE , Ronald A. PIRO , Daryl M. SEITZER , Rohit SHETTY , Thomas W. WYCKOFF
IPC分类号： G11C29/12 , G06F11/27 , G11C29/00
CPC分类号： G11C29/12 , G06F11/0793 , G11C17/00 , G11C29/4401 , G11C29/822
摘要： A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.
摘要翻译：提供了具有冗余性和使用方法的只读存储器（ROM）。具有冗余的ROM包括耦合到具有一个或多个冗余修复的修复电路的可编程阵列。一个或多个冗余修复包括字地址匹配逻辑块，数据I / O地址和三态缓冲器。字地址匹配逻辑块作为控制输入提供给三态缓冲器，并且将数据I / O地址作为输入提供给三态缓冲器。提供每个冗余修复的三态缓冲器的输出作为一个或多个逻辑器件的第一输入。提供ROM位单元阵列的一个或多个数据输出作为一个或多个逻辑器件中的相应一个的第二输入。

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