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    • 3. 发明授权
    • Resonant pumped short cavity fiber laser with optical feedback stabilization
    • 具有光反馈稳定性的谐振泵浦短腔光纤激光器
    • US06301272B1
    • 2001-10-09
    • US09505000
    • 2000-02-15
    • Thomas L. KochRobert Waarts
    • Thomas L. KochRobert Waarts
    • H01S330
    • H01S3/0941H01S3/0675H01S3/08086H01S3/13H01S3/1608H01S3/1618H01S3/23H01S3/2383
    • A fiber laser or fiber amplifier uses resonant pumping of the gain medium by providing a pump resonator that establishes a resonator cavity at the pump wavelength which includes the pumped gain medium. The pump resonator may be of a distributed feedback (DFB) or a distributed Bragg reflector (DBR) type construction, and may be combined with signal reflection apparatus of either DFB or DBR type construction that provides oscillation of the desired laser output wavelength. If used without a signal reflection apparatus, the invention may be operated as a resonant pumped fiber amplifier. A resonant pumped laser may use a wavelength stabilized pump source to maximize pumping efficiency, the stabilization being provided by optical feedback.
    • 光纤激光器或光纤放大器通过提供在包括泵浦增益介质的泵浦波长处建立谐振器腔的泵谐振器来使用增益介质的谐振泵浦。 泵谐振器可以是分布式反馈(DFB)或分布式布拉格反射器(DBR)型结构,并且可以与提供所需激光输出波长的振荡的DFB或DBR型结构的信号反射装置组合。 如果在没有信号反射装置的情况下使用,本发明可以作为谐振泵浦光纤放大器来操作。 谐振泵浦激光器可以使用波长稳定的泵浦源来最大化泵浦效率,由光学反馈提供稳定性。
    • 8. 发明授权
    • Method of making tapered semiconductor waveguides
    • 制造锥形半导体波导的方法
    • US4944838A
    • 1990-07-31
    • US389074
    • 1989-08-03
    • Thomas L. KochUziel Koren
    • Thomas L. KochUziel Koren
    • G02B6/136H01L21/306H01S5/323
    • H01L21/30612G02B6/136H01S5/32391
    • Adiabatic mode control and structural reproducibility are achieved by a tapered semiconductor waveguide structure wherein semiconductor guiding layers are interleaved with stop-etch layers and each guiding layer extends further along the propagation axis of the waveguide further than the guiding layer immediately adjacent thereabove to create a staircase-like core or guiding structure. Cladding regions of appropriate semiconductor material having a lower index of refraction than the tapered core structure may be added to completely surround the tapered guiding structure. The profile of the tapered structure is realizable as any desired staircase-like shape such as linear, parabolic, exponential or the like. Additional layers of higher index of refraction semiconductor material may be included in the cladding region to permit additional beam shaping of the expanded spatial mode propagating along the tapered waveguide.Photolithographic masks defining successively larger exposed areas are aligned, deposited over the waveguide structure, and then removed following each etching step. Material selective etching techniques are employed to remove exposed (unmasked) portions of guiding layers. In sequence, the exposed, formerly underlying portions of the stop-etch layers are then removed using material selective etching. Iteration of the above process steps permits a tapered waveguide structure to be defined.
    • 绝热模式控制和结构再现性通过锥形半导体波导结构实现,其中半导体引导层与停止蚀刻层交错,并且每个引导层沿着波导的传播轴进一步延伸,远离其上方紧邻的引导层,以产生阶梯 型芯或引导结构。 可以添加具有比锥形芯结构更低的折射率的适当的半导体材料的包层区域以完全包围锥形引导结构。 锥形结构的轮廓可实现为任何所需的阶梯状形状,例如线性,抛物线形,指数型等。 可以在包层区域中包含更高折射率的折射率半导体材料的附加层,以允许沿着锥形波导传播的扩展空间模式的附加束成形。 定义连续较大的暴露区域的光刻掩模对准,沉积在波导结构上,然后在每个蚀刻步骤之后被移除。 使用材料选择性蚀刻技术来去除引导层的暴露(未掩蔽)部分。 顺序地,然后使用材料选择性蚀刻去除停止蚀刻层的暴露的先前的下面的部分。 上述工艺步骤的迭代允许限定锥形波导结构。