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    • 1. 发明授权
    • Electro-explosive device with shaped primary charge
    • 具有形状主充电的电击装置
    • US6105503A
    • 2000-08-22
    • US39809
    • 1998-03-16
    • Thomas A. Baginski
    • Thomas A. Baginski
    • F42B3/13F42B3/18
    • F42B3/13
    • An electro-explosive device is provided for detonating a pyrotechnic mix disposed adjacent the device to initiate an explosion. The device comprises a silicon wafer semiconductor substrate having a top surface and a bottom surface. The top surface of the substrate is covered with an insulating layer and a cavity is formed through the insulating layer a predetermined distance into the substrate. A first layer of conducting material covers the insulating layer and the interior walls of the cavity and a second layer of conducting material covers the bottom surface of the substrate. A primary explosive material is packed in the cavity. When the first and second layers of conducting material are coupled to a source of electric current, the current flows into the conducting material lining the walls of the cavity causing it to explode through ohmic heating in a plasma, thus igniting the primary explosive material within the cavity. The resulting energy is projected from the cavity in a shaped, relatively collimated pattern to detonate a pyrotechnic mix disposed adjacent the device.
    • 提供一种电爆炸装置,用于引爆邻近该装置设置的烟火混合物以引发爆炸。 该器件包括具有顶表面和底表面的硅晶片半导体衬底。 衬底的顶表面被绝缘层覆盖,并且通过绝缘层形成预定距离进入衬底的空腔。 第一层导电材料覆盖绝缘层和空腔的内壁,第二层导电材料覆盖基板的底表面。 初级炸药包装在腔内。 当第一和第二导电材料层耦合到电流源时,电流流入衬在空腔壁上的导电材料,导致其在等离子体中通过欧姆加热而爆炸,从而点燃在第 腔。 所得到的能量以成形的相对准直的图案从空腔突出以引爆邻近设备布置的烟火混合物。
    • 3. 发明授权
    • Electro-explosive device with laminate bridge
    • 具有层压桥的电击装置
    • US06925938B2
    • 2005-08-09
    • US10914969
    • 2004-08-09
    • Thomas A. BaginskiTodd S. ParkerWm. David Fahey
    • Thomas A. BaginskiTodd S. ParkerWm. David Fahey
    • F42B3/13F42B3/198F42C19/12
    • F42B3/198F42B3/13
    • A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.
    • 半导体桥(SCB)器件。 在一个实施例中,SCB装置包括在绝缘材料的顶部上的层压层,其中层压层包括至少两个反应性材料的一系列层,并且其中层压层包括基本上覆盖表面积的两个较大部分 的绝缘材料,以及连接两个较大部分的桥接部。 至少一个导电接触焊盘耦合到所述一系列层中的至少一个层,其中通过所述导电接触垫的预定电流导致所述桥接部分引发涉及所述层压层的反应。 在一个实施例中,SCB器件包括由绝缘材料与另一种材料(例如金属)的界面形成的集成二极管。
    • 4. 发明授权
    • Electro-explosive device with laminate bridge
    • 具有层压桥的电击装置
    • US06772692B2
    • 2004-08-10
    • US10418647
    • 2003-04-18
    • Thomas A. BaginskiTodd S. ParkerWm. David Fahey
    • Thomas A. BaginskiTodd S. ParkerWm. David Fahey
    • F42C1912
    • F42B3/198F42B3/13
    • A semiconductor bridge (SCB) device. In one embodiment, the SCB device includes a laminate layer on top of an insulating material, wherein the laminate layer comprises a series of layers of at least two reactive materials, and wherein the laminate layer comprises two relatively large sections that substantially cover the surface area of the insulating material, and a bridge section joining the two relatively large sections. At least one conductive contact pad is coupled to at least one of the series of layers, wherein a predetermined current through the conductive contact pad causes the bridge section to initiate a reaction in which the laminate layer is involved. In one embodiment, the SCB device includes an integrated diode formed by an interface of the insulating material with another material, such as a metal.
    • 半导体桥(SCB)器件。 在一个实施例中,SCB装置包括在绝缘材料的顶部上的层压层,其中层压层包括至少两个反应性材料的一系列层,并且其中层压层包括基本上覆盖表面积的两个较大部分 的绝缘材料,以及连接两个较大部分的桥接部。 至少一个导电接触焊盘耦合到所述一系列层中的至少一个层,其中通过所述导电接触垫的预定电流导致所述桥接部分引发涉及所述层压层的反应。 在一个实施例中,SCB器件包括由绝缘材料与另一种材料(例如金属)的界面形成的集成二极管。
    • 5. 发明授权
    • Radio frequency and electrostatic discharge insensitive
electro-explosive devices having non-linear resistances
    • 具有非线性电阻的射频和静电放电不敏感的电磁爆炸装置
    • US5905226A
    • 1999-05-18
    • US970127
    • 1997-11-13
    • Thomas A. Baginski
    • Thomas A. Baginski
    • F42B3/12F42B3/13F42B3/18F42B3/182
    • F42B3/182F42B3/13F42B3/18
    • An electro-explosive device has two serpentine resistors fabricated on a thermally conductive substrate with the resistors being interconnected by a central bridge element. The resistance of the bridge element is much lower than that of the serpentine resistors and the serpentine resistors have a much larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The resistance of the bridge element increases with temperature whereby the bridge element receives more of the energy from the applied signal as the temperature increases. The EED is insensitive to coupled RF energy and to an electrostatic discharge since most of the energy from these stray signals is directed to the serpentine resistors and not to the bridge element. In another embodiment, two of the resistors are metal-oxide phase variable resistances and a third resistor is formed from a bowtie-shaped layer of zirconium. The resistances through the metal-oxide phase layers decrease with signal intensity whereby the zirconium can receive most of the energy from a high intensity firing signal. A shunting element, which may be placed across an EED, has a bowtie-shaped conductive layer formed on a substrate. The conductive layer explodes in a plasma above a certain signal intensity. The shunting element may comprise another type of device, such as a diode, capacitor, etc.
    • 电爆炸装置具有在导热基板上制造的两个蛇形电阻,电阻器通过中心桥接元件相互连接。 桥元件的电阻远低于蛇形电阻器的电阻,蛇形电阻器具有大得多的表面积与体积比。 一层锆被放置在桥元件上并与桥元件一起爆炸成等离子体,以点燃烟火化合物。 桥接元件的电阻随温度升高,随着温度升高,桥接元件从施加的信号接收更多的能量。 EED对耦合的RF能量和静电放电不敏感,因为这些杂散信号的大部分能量被引导到蛇形电阻器而不是针对桥接元件。 在另一个实施例中,两个电阻器是金属氧化物相位可变电阻,第三电阻器是由一个形状为锆的层形成的。 通过信号强度,通过金属氧化物相层的电阻降低,由此锆可以从高强度触发信号接收大部分能量。 可以放置在EED上的分流元件具有形成在基板上的弓形导电层。 导电层在某种信号强度以上的等离子体中爆炸。 分流元件可以包括另一类型的器件,例如二极管,电容器等
    • 6. 发明授权
    • Monolithic RF/EMI desensitized electroexplosive device
    • 单片RF / EMI脱敏电爆炸装置
    • US4893563A
    • 1990-01-16
    • US280049
    • 1988-12-05
    • Thomas A. Baginski
    • Thomas A. Baginski
    • F42B3/188F42B3/198
    • F42B3/198F42B3/188
    • A device to protect electromagnetic devices and the method to manufacture e device is disclosed. The novel structure is inherently immune to sinusoidal radio frequency (RF) radiation, and also offers protection against stray signals induced by RF arcing. A main feature is the monolithic construction which reduces dramatically the coupling area for direct RF radiation. An oxide layer is thermally grown on a silicate substrate to form a dielectric, then a resistive layer of nichrome is sputtered to form a heating element. This process places the resistive bridgewire in direct contact with distributed capacitance.
    • 公开了一种用于保护电磁装置的装置和制造该装置的方法。 新颖的结构固有地对正弦射频(RF)辐射免疫,并且还提供针对RF电弧引起的杂散信号的保护。 主要特点是单片结构显着降低了直接RF辐射的耦合面积。 氧化物层在硅酸盐衬底上热生长以形成电介质,然后溅射镍铬合金的电阻层以形成加热元件。 该过程使电阻桥接器与分布电容直接接触。
    • 7. 发明授权
    • Radio frequency and electrostatic discharge insensitive
electro-explosive devices having non-linear resistances
    • US5847309A
    • 1998-12-08
    • US518169
    • 1995-08-24
    • Thomas A. Baginski
    • Thomas A. Baginski
    • F42B3/12F42B3/13F42B3/18F42B3/182
    • F42B3/182F42B3/13F42B3/18
    • An electro-explosive device has two serpentine resistors fabricated on a thermally conductive substrate with the resistors being interconnected by a central bridge element. The resistance of the bridge element is much lower than that of the serpentine resistors and the serpentine resistors have a much larger surface area to volume ratio. A layer of zirconium is placed on the bridge element and explodes into a plasma along with the bridge element in order to ignite a pyrotechnic compound. The resistance of the bridge element increases with temperature whereby the bridge element receives more of the energy from the applied signal as the temperature increases. The EED is insensitive to coupled RF energy and to an electrostatic discharge since most of the energy from these stray signals is directed to the serpentine resistors and not to the bridge element. In another embodiment, two of the resistors are metal-oxide phase variable resistances and a third resistor is formed from a bowtie-shaped layer of zirconium. The resistances through the metal-oxide phase layers decrease with signal intensity whereby the zirconium can receive most of the energy from a high intensity firing signal. A shunting element, which may be placed across an EED, has a bowtie-shaped conductive layer formed on a substrate. The conductive layer explodes in a plasma above a certain signal intensity. The shunting element may comprise another type of device, such as a diode, capacitor, etc.
    • 9. 发明授权
    • Integrated spark gap device
    • 集成火花隙装置
    • US06977468B1
    • 2005-12-20
    • US10770134
    • 2004-02-02
    • Thomas A. Baginski
    • Thomas A. Baginski
    • H01J17/30H01J17/46H01T2/02H01B37/00
    • H01J17/46H01T2/02
    • A spark gap device that is formed in an integrated circuit (IC). The IC has a dielectric substrate upon which a high-voltage switch is disposed. The switch includes an anode element and a cathode element separated from each other by a spark gap. A trigger electrode is disposed on the substrate material in the spark gap. A capacitor is electrically coupled to the trigger electrode. The cathode and anode elements and the trigger electrode preferably are at least partially covered with a dielectric material. When the capacitor is charged, the charge on the capacitor exerts a strong electric field on the cathode and anode elements that causes ions to migrate in the cathode and anode elements toward the spark gap. When the trigger electrode is excited by an electrical current, the ions arc across the gap and a conductive path is created between the cathode element and the anode element.
    • 一种形成在集成电路(IC)中的火花隙装置。 IC具有介于其上设置有高压开关的电介质基板。 该开关包括通过火花隙彼此分离的阳极元件和阴极元件。 触发电极设置在火花隙中的基板材料上。 电容器电耦合到触发电极。 阴极和阳极元件和触发电极优选地至少部分地被电介质材料覆盖。 当电容器充电时,电容器上的电荷在阴极和阳极元件上施加强电场,导致离子在阴极和阳极元件中朝向火花隙移动。 当触发电极被电流激发时,离子跨越间隙,并且在阴极元件和阳极元件之间产生导电路径。