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    • 1. 发明授权
    • Method for inspecting defect of article to be inspected
    • 检查待检物品缺陷的方法
    • US08422014B2
    • 2013-04-16
    • US12712419
    • 2010-02-25
    • Tatsuhiko HatanoKouichi MiyashitaIsao Shikata
    • Tatsuhiko HatanoKouichi MiyashitaIsao Shikata
    • G01N21/00
    • G01M3/38G01N21/4738G01N21/88G01N21/95692G01N2015/0846
    • A method of inspecting defects in an inspection target includes (1) a step of supplying a particle-containing gas to one end face of the inspection target under pressure, applying in parallel a first laser beam to the vicinity of the other end face of the inspection target, and photographing such end face from a position vertical to such end face, (2) a step of supplying a particle-containing gas to the one end face of the inspection target under pressure, applying in parallel a second laser beam to the vicinity of the other end face of the inspection target, and photographing such end face from a position vertical to such end face, and (3) a step of specifying defects in the inspection target from photographic results obtained by the steps (1) and (2).
    • 检查对象中的缺陷检查方法包括:(1)在压力下向检测对象物的一个端面供给含颗粒的气体的步骤,将第一激光束平行地施加到所述检查对象的另一端面附近 检查目标,并且从垂直于该端面的位置拍摄该端面,(2)在压力下向检查对象的一个​​端面供给含颗粒的气体的步骤,将第二激光束平行地施加到 并且从垂直于该端面的位置拍摄该端面,以及(3)通过步骤(1)和(1)获得的照相结果来指定检查对象中的缺陷的步骤 2)。
    • 2. 发明授权
    • High voltage pulse generating circuit
    • 高电压脉冲发生电路
    • US07548402B2
    • 2009-06-16
    • US11579539
    • 2005-05-13
    • Tatsuhiko HatanoTakeshi Sakuma
    • Tatsuhiko HatanoTakeshi Sakuma
    • H02H3/00
    • H02M3/33569H02M1/32
    • In a high voltage pulse generating circuit, inductive energy is accumulated in an inductor due to electrical continuity of a first semiconductor switch by turning on a second semiconductor switch, and a high voltage pulse is generated by the inductor due to turning off of the first semiconductor switch by turning off the second semiconductor switch. In the case where both edge voltages of the first semiconductor switch and the second semiconductor switch are off the normal range, a failure diagnosis circuit is provided for stopping drive of the second semiconductor switch.
    • 在高电压脉冲发生电路中,通过接通第二半导体开关,由于第一半导体开关的电连续性,感应能量积累在电感器中,并且由于第一半导体的断开而由电感器产生高电压脉冲 通过关闭第二个半导体开关来切换。 在第一半导体开关和第二半导体开关的两个边缘电压都偏离正常范围的情况下,提供用于停止第二半导体开关的驱动的故障诊断电路。