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1. 发明申请

US20060226883A1 High-voltage pulse generating circuit 有权
公开(公告)号：US20060226883A1
公开(公告)日：2006-10-12
申请号：US11447377
申请日：2006-06-06
申请人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
发明人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
IPC分类号： H03K3/00
CPC分类号： H03K17/105 , H03K3/57
摘要： A high-voltage pulse generating circuit has an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit, and a diode having a cathode terminal connected to a terminal of the inductor which has another terminal connected to an anode terminal of the first semiconductor switch, and an anode terminal connected to a gate terminal of the first semiconductor switch. The inductor stores an induction energy when the first semiconductor switch is rendered conductive by a turn-on of the second semiconductor switch, and generates a high-voltage pulse when the first semiconductor switch is turned off by a turn-off of the second semiconductor switch.

2. 发明授权

US07414333B2 High-voltage pulse generating circuit 有权
标题翻译：高电压脉冲发生电路
公开(公告)号：US07414333B2
公开(公告)日：2008-08-19
申请号：US11447377
申请日：2006-06-06
申请人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
发明人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
IPC分类号： H03K3/00
CPC分类号： H03K17/105 , H03K3/57
摘要： A high-voltage pulse generating circuit has an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit, and a diode having a cathode terminal connected to a terminal of the inductor which has another terminal connected to an anode terminal of the first semiconductor switch, and an anode terminal connected to a gate terminal of the first semiconductor switch. The inductor stores an induction energy when the first semiconductor switch is rendered conductive by a turn-on of the second semiconductor switch, and generates a high-voltage pulse when the first semiconductor switch is turned off by a turn-off of the second semiconductor switch.
摘要翻译：高压脉冲发生电路具有串联连接在直流电源单元的相对端子之间的电感器，第一半导体开关和第二半导体开关，以及具有连接到电感器的端子的阴极端子的二极管其具有连接到第一半导体开关的阳极端子的另一端子和连接到第一半导体开关的栅极端子的阳极端子。当第一半导体开关通过第二半导体开关导通而导通时，电感器存储感应能量，并且当第一半导体开关通过第二半导体开关的截止而被切断时，产生高电压脉冲。

3. 发明授权

US07084528B2 High-voltage pulse generating circuit 有权
公开(公告)号：US07084528B2
公开(公告)日：2006-08-01
申请号：US10457164
申请日：2003-06-09
申请人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
发明人： Tatsuhiko Hatano , Takeshi Sakuma , Katsuji Iida
IPC分类号： H03K3/00
CPC分类号： H03K17/105 , H03K3/57
摘要： A high-voltage pulse generating circuit has an inductor, a first semiconductor switch, and a second semiconductor switch which are connected in series between opposite terminals of a DC power supply unit, and a diode having a cathode terminal connected to a terminal of the inductor which has another terminal connected to an anode terminal of the first semiconductor switch, and an anode terminal connected to a gate terminal of the first semiconductor switch. The inductor stores an induction energy when the first semiconductor switch is rendered conductive by a turn-on of the second semiconductor switch, and generates a high-voltage pulse when the first semiconductor switch is turned off by a turn-off of the second semiconductor switch.

4. 发明授权

US06359424B2 Switching circuit for generating pulsed power 失效
标题翻译：用于产生脉冲功率的开关电路
公开(公告)号：US06359424B2
公开(公告)日：2002-03-19
申请号：US09788312
申请日：2001-02-16
申请人： Katsuji Iida , Tatsuhiko Hatano , Takeshi Sakuma , Wataru Shionoya
发明人： Katsuji Iida , Tatsuhiko Hatano , Takeshi Sakuma , Wataru Shionoya
IPC分类号： G05F1325
CPC分类号： H03K3/57
摘要： A switching circuit for generating pulsed power including a plurality of capacitors connected in parallel with first and second output terminals, a plurality of series circuits of a primary conductor and a static induction thyristor connected in parallel with respective capacitors, a plurality of magnetic cores with which the primary conductors are magnetically coupled, respectively, and a series arrangement of a plurality of secondary conductors each being magnetically coupled with respective magnetic cores, both ends of the series arrangement being connected to first and second output terminals, respectively.
摘要翻译：一种用于产生包括与第一和第二输出端并联连接的多个电容器的脉冲功率的开关电路，与各个电容器并联连接的主导体和静态感应晶闸管的多个串联电路，多个磁芯，主导体分别磁耦合，并且多个次级导体的串联布置分别与相应的磁芯磁耦合，串联装置的两端分别连接到第一和第二输出端子。

5. 发明授权

US06403988B2 Semiconductor device with reverse conducting faculty 失效
标题翻译：具有反向传导技术的半导体器件
公开(公告)号：US06403988B2
公开(公告)日：2002-06-11
申请号：US09776577
申请日：2001-02-02
申请人： Katsuji Iida , Takeshi Sakuma , Yuichiro Imanishi , Naohiro Shimizu
发明人： Katsuji Iida , Takeshi Sakuma , Yuichiro Imanishi , Naohiro Shimizu
IPC分类号： H01L2974
CPC分类号： H01L27/0817
摘要： A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n− silicon substrate 101, p+ gate regions 102, 104 formed in one surface of the substrate, a p+ anode region 111 formed in the other surface of the substrate, a main diode section 134 having a cathode region formed by the silicon substrate and an anode region 131 formed in the one surface of the substrate, and a series arrangement 145 of diodes including plural p+ anode regions 142, plural n+ cathode contact regions 143 formed in the first surface of the substrate, and plural conductive layers 144 connecting these anode regions and cathode contact legions successively. An anode and a cathode of the series arrangement of diodes are connected to a cathode electrode 110 and an anode electrode 113 of the thyristor section. Each of diodes in the series arrangement has a breakdown voltage lower than that of the thyristor section.
摘要翻译：构成为反向导电静电感应晶闸管的半导体器件，包括形成在衬底的一个表面中的由n-硅衬底101，p +栅极区102,104形成的晶闸管部114，形成在衬底的另一个表面中的p +阳极区111 基板，具有由硅基板形成的阴极区域的主二极管部分134和形成在基板的一个表面中的阳极区域131以及包括多个p +阳极区域142的二极管的串联布置145，多个n +阴极接触区域 143和形成在基板的第一表面中的多个导体层144，以及连接这些阳极区域和阴极接触部分的多个导电层144。二极管串联布置的阳极和阴极连接到晶闸管部分的阴极电极110和阳极电极113。串联装置中的每个二极管的击穿电压低于晶闸管部分的击穿电压。

6. 发明授权

US06788012B2 Circuit for generating high voltage pulse 失效
标题翻译：用于产生高压脉冲的电路
公开(公告)号：US06788012B2
公开(公告)日：2004-09-07
申请号：US09884855
申请日：2001-06-19
申请人： Takeshi Sakuma , Katsuji Iida
发明人： Takeshi Sakuma , Katsuji Iida
IPC分类号： H01J1104
CPC分类号： H03K3/57 , Y10T307/832
摘要： A simple and less expensive high voltage pulse generating circuit including a low voltage direct current voltage source having one output terminal connected to another output terminal via a series circuit of a first switch with a low withstand voltage, an inductance storing inductive energy and a second switch with a high withstand voltage, and a branch circuit including a free-wheel diode connected between the other output terminal of the direct current voltage source and a common connection point between the first switch and the inductance. After storing inductive energy in the inductance by turning “on” the first and second switches, these first and second switches are turn “off” to commutate the energy stored in the inductance into a capacitive load connected across the second switch to charge the load abruptly and generate a high voltage pulse having a very narrow width without using a complicated and expensive magnetic compression circuit.
摘要翻译：一种简单且成本较低的高电压脉冲发生电路，包括：低压直流电压源，其具有经由低耐压的第一开关的串联电路连接到另一输出端的一个输出端，存储感应能的电感和第二开关具有高耐受电压，以及分支电路，其包括连接在直流电压源的另一个输出端子与第一开关和电感之间的公共连接点的续流二极管。通过使第一和第二开关“接通”来将感应能量存储在电感中，这些第一和第二开关被“关闭”以将存储在电感中的能量转换成连接在第二开关上的电容性负载，从而突然地对负载充电并且生成具有非常窄的宽度的高电压脉冲，而不使用复杂和昂贵的磁压缩电路。

7. 发明授权

US06268754B1 Gate driving circuit for power semiconductor switch 失效
标题翻译：功率半导体开关栅极驱动电路
公开(公告)号：US06268754B1
公开(公告)日：2001-07-31
申请号：US09615301
申请日：2000-07-13
申请人： Takeshi Sakuma , Katsuji Iida
发明人： Takeshi Sakuma , Katsuji Iida
IPC分类号： H03H1126
CPC分类号： H03K17/0403
摘要： A gate driving circuit for power semiconductor switch including a DC voltage source whose positive output terminal is connected to a cathode of a power semiconductor switch, a series circuit of a reactor and a turn-on switching element connected across the positive output terminal of the DC voltage source and a gate of the power semiconductor switch, a turn-off switching element connected across the gate of the power semiconductor switch and a negative output terminal of the DC voltage source, a freewheel diode connected across the negative output terminal of the DC voltage source and a junction point between the turn-on switching element and the reactor, and a control circuit for controlling the turn-on and turn-off switching elements such that the power semiconductor switch is kept non-conductive by making the first and second switching elements in off-state and in on-state, respectively, upon turning-on the power semiconductor switch, after storing energy in said reactor by changing the first switching element from off-state into on-state, the second switching element is changed into the off-state to discharge the energy stored in the reactor abruptly into the gate of the power semiconductor switch.
摘要翻译：一种用于功率半导体开关的栅极驱动电路，包括直流电压源，其正极输出端子连接到功率半导体开关的阴极，电抗器的串联电路和连接在直流电压的正输出端子上的导通开关元件源极和功率半导体开关的栅极，连接在功率半导体开关的栅极和直流电压源的负极输出端之间的截止开关元件，连接在直流电压源的负极输出端子上的续流二极管以及导通开关元件和电抗器之间的连接点，以及用于控制导通和关断开关元件的控制电路，使得功率半导体开关通过使第一和第二开关元件保持不导通在断开状态和导通状态时，在接通功率半导体开关时，在通过改变t将能量存储在所述反应器中之后他将第一开关元件从截止状态切换到导通状态，第二开关元件变成截止状态，将存储在电抗器中的能量突然地放入功率半导体开关的栅极。

8. 发明授权

US5077487A Driver circuit for a large capacity switching element 失效
标题翻译：大容量开关元件的驱动电路
公开(公告)号：US5077487A
公开(公告)日：1991-12-31
申请号：US575312
申请日：1990-08-30
申请人： Katsuji Iida
发明人： Katsuji Iida
IPC分类号： H03K17/73 , H02M1/06 , H02M1/08 , H03K17/04 , H03K17/0412 , H03K17/732
CPC分类号： H03K17/0403 , H03K17/04126
摘要： A driver circuit for a large capacity switching element like power transistors etc. having an overdrive function. The driver circuit supplies a sharp overdrive current only at the build-up time and the control thereafter is effected by a constant current source so that the current limiting resistor can be saved and the current capacity of the various elements may be decreased.

9. 发明申请

US20090171521A1 AC Link Bidirectional DC-DC Converter, Hybrid Power Supply System Using the Same and Hybrid Vehicle 有权
标题翻译：交流链路双向DC-DC转换器，使用相同的混合动力电源系统和混合动力车辆
公开(公告)号：US20090171521A1
公开(公告)日：2009-07-02
申请号：US12085151
申请日：2006-11-22
申请人： Atsushi Moki , Katsuji Iida
发明人： Atsushi Moki , Katsuji Iida
IPC分类号： B60L11/12 , B60L11/02 , B60L1/00
CPC分类号： H02J7/0016 , B60L11/18 , B60L2210/10 , B60L2210/20 , H02J7/345 , H02M3/33584 , Y02T10/7005 , Y02T10/7055 , Y02T10/7216 , Y02T10/725
摘要： In an AC link type boosting device, DC terminals of two voltage inverters are connected each other in series in additive polarity and plural AC terminals of each of the voltage inverters are connected to a transformer. The two voltage type inverters are AC linked to each other via the transformer. An external voltage applied between the DC terminals of the AC link type booster is divided by the voltage-type inverters.
摘要翻译：在交流链路型升压装置中，两个电压逆变器的直流端子以相加的极性串联连接，并且每个电压逆变器的多个交流端子连接到变压器。两个电压型逆变器通过变压器互相连接。施加在AC链路型升压器的DC端子之间的外部电压由电压型逆变器分压。

10. 发明授权

US5059887A Step-up and step-down chopper device 失效
标题翻译：升压和降压切割装置
公开(公告)号：US5059887A
公开(公告)日：1991-10-22
申请号：US566085
申请日：1990-08-10
申请人： Katsuji Iida , Takahiro Kishimoto
发明人： Katsuji Iida , Takahiro Kishimoto
IPC分类号： H02M3/135 , H02M3/142 , H02M3/155
CPC分类号： H02M3/142
摘要： A direct current to direct current converting chopper device comprising essentially two switching elements, two reactors, two diodes and three condensers likewisely with a conventional device but able to maintain rather stable output voltages to avoid higher harmonic noises and able to provide output voltage higher than the input voltage.

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