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    • 8. 发明申请
    • INPUT AND OUTPUT OPERATION DEVICE
    • 输入和输出操作设备
    • US20160357272A1
    • 2016-12-08
    • US15102906
    • 2014-12-11
    • Minoru KUMAHARATakuya MORITeruyuki TAKIZAWATakeshi NAKAZAWAJiro SEKI
    • Minoru KUMAHARATakuya MORITeruyuki TAKIZAWATakeshi NAKAZAWAJiro SEKI
    • G06F3/038H01H50/44H01H50/64H01H50/36G06F3/0354G06F3/01
    • G06F3/038G06F3/016G06F3/0338G06F3/03549G06F3/0383H01H50/36H01H50/44H01H50/643
    • An input and output operation device includes an actuator 165 including an operation unit 850; a movable unit having the operation unit and at least one attraction magnet mounted thereon and including a concaved portion in a part thereof; a secured unit including a convexed spherical surface loosely engageable with at least one magnetic member and the concaved portion of the movable unit, the convexed spherical surface being point-contactable or line-contactable with the concaved portion of the movable unit by a magnetic attraction force, the secured unit supporting the movable unit such that the movable unit is freely rotatable as centered around a spherical center of the convexed spherical surface; a first driving unit rotating the operation unit as centered around an X-axis passing the spherical center; a second driving unit rotating the operation unit as centered around a Y-axis perpendicular to the X-axis; a third driving unit rotating the movable unit as centered around a Z-axis that is perpendicular to the X-axis and the Y-axis and is a central axis of the operation unit; and a detector detecting a first rotation angle and a second rotation angle of the operation unit around the X-axis and the Y-axis; and also includes a detection circuit unit 360 generating first and second rotation angle signals; a control computation processing unit 94 generating first and second target rotation angle signals; and a driving circuit unit 350 generating a signal usable to drive the first and second driving units.
    • 一个输入和输出操作装置包括一个包括操作单元850的致动器165; 具有操作单元和安装在其上的至少一个吸引磁体并且在其一部分中包括凹部的可动单元; 固定单元,其包括可与至少一个磁性构件和所述可移动单元的所述凹部松动地接合的凸形球形表面,所述凸形球形表面可通过磁力吸引力与所述可移动单元的所述凹部可点对接或者线接触 所述固定单元支撑所述可移动单元,使得所述可移动单元以所述凸出的球形表面的球形中心为中心自由旋转; 第一驱动单元,其以通过所述球形中心的X轴为中心旋转所述操作单元; 第二驱动单元,以与X轴垂直的Y轴为中心旋转操作单元; 第三驱动单元,使所述可动单元以围绕与所述X轴和所述Y轴正交并且为所述操作单元的中心轴的Z轴为中心旋转; 以及检测器,其围绕X轴和Y轴检测操作单元的第一旋转角度和第二旋转角度; 并且还包括产生第一和第二旋转角度信号的检测电路单元360; 控制计算处理单元94,生成第一和第二目标旋转角度信号; 以及产生可用于驱动第一和第二驱动单元的信号的驱动电路单元350。
    • 9. 发明申请
    • HIGHLY SELECTIVE SPACER ETCH PROCESS WITH REDUCED SIDEWALL SPACER SLIMMING
    • 具有减少的平台间隔滑动的高选择性间隔件流程
    • US20140120728A1
    • 2014-05-01
    • US14150027
    • 2014-01-08
    • Angelique Denise RALEYTakuya MORIHirota OHTAKE
    • Angelique Denise RALEYTakuya MORIHirota OHTAKE
    • H01L21/311H01L21/283
    • H01L21/31116H01J37/32192H01J37/3222H01L21/283H01L21/3115H01L29/6656
    • A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure. The spacer etch process sequence may include oxidizing an exposed surface of the spacer material to form a spacer oxidation layer, performing a first etching process to anisotropically remove the spacer oxidation layer from the spacer material at the substrate region on the substrate and the spacer material at the capping region of the gate structure, and performing a second etching process to selectively remove the spacer material from the substrate region on the substrate and the capping region of the gate structure to leave behind the spacer sidewall on the sidewall of the gate structure.
    • 描述了用于执行间隔物蚀刻工艺的方法。 该方法包括在衬底上的栅极结构上保形地施加间隔物材料,以及执行间隔物蚀刻工艺序列以从栅极结构的覆盖区域和邻近栅极基极的衬底区域部分地去除间隔物材料 同时保持沿着栅极结构的侧壁定位的间隔件侧壁。 间隔物蚀刻工艺序列可以包括氧化间隔物材料的暴露表面以形成间隔物氧化层,执行第一蚀刻工艺以在衬底上的衬底区域处的间隔物材料各向异性地去除间隔物氧化层,并且间隔物材料 栅极结构的封盖区域,并且执行第二蚀刻工艺以选择性地从衬底上的衬底区域和栅极结构的封盖区域去除间隔物材料,以在栅极结构的侧壁上留下间隔壁侧壁。