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1. 发明申请

US20130029122A1 RESIN FILM AND ITS PRODUCTION METHOD, POLARIZER, AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：树脂薄膜及其生产方法，极化和液晶显示装置
公开(公告)号：US20130029122A1
公开(公告)日：2013-01-31
申请号：US13555852
申请日：2012-07-23
申请人： Nobutaka FUKAGAWA , Yu NAITO , Yoshio ISHII , Jun TAKEDA , Akiko WATANO , Masaki NORO , Takeshi SENGA
发明人： Nobutaka FUKAGAWA , Yu NAITO , Yoshio ISHII , Jun TAKEDA , Akiko WATANO , Masaki NORO , Takeshi SENGA
IPC分类号： C08L1/12 , B29C41/42 , B29C41/32 , B32B3/00
CPC分类号： C08J5/18 , C08J2301/10 , C08K5/10 , C08L1/10 , C08L1/12 , C08L1/14 , G02B5/305 , G02F1/133528 , G02F2201/50 , Y10T428/24975 , C08L67/02
摘要： A resin film containing a resin and from 0.01% by mass to 20% by mass, relative to the resin, of an organic acid satisfying (1) The organic acid comprises structure in which a polyalcohol bonds to a polycarboxylic acid via an ester bond, (2) The total number of the molecules of the polyalcohol and the polycarboxylic acid forming the organic acid is at least 3, and (3) The organic acid has at least one unsubstituted carboxylic acid derived from the polycarboxylic acid.
摘要翻译：含有树脂的树脂膜相对于树脂为0.01质量％〜20质量％，满足（1）的有机酸。有机酸包括其中多元醇通过酯键与多元羧酸键合的结构，（2）形成有机酸的多元醇和多元羧酸的分子的总数为3以上，（3）有机酸具有至少一种来自多元羧酸的未取代的羧酸。

2. 发明申请

US20090072230A1 GAS-BARRIER FILM AND ORGANIC DEVICE COMPRISING SAME 有权
标题翻译：气体阻隔膜和包含其的有机装置
公开(公告)号：US20090072230A1
公开(公告)日：2009-03-19
申请号：US12211498
申请日：2008-09-16
申请人： Shigehide ITO , Takeshi Senga
发明人： Shigehide ITO , Takeshi Senga
IPC分类号： H01L29/12 , C09K19/00 , B32B9/04
CPC分类号： C23C16/345 , C23C16/30 , H01L51/0097 , H01L51/5253 , H01L51/5256 , H01L2251/5338 , H01L2251/5346 , Y02E10/549 , Y10T428/1068 , Y10T428/265 , Y10T428/31663 , Y10T428/31667
摘要： A gas-barrier film comprising at least one silicon hydronitride layer and at least one silicon nitride layer on a surface of a flexible supporting substrate. The film has an excellent gas-barrier property.
摘要翻译：一种阻气膜，其在柔性支撑基材的表面上包含至少一个氢化氮化硅层和至少一个氮化硅层。该膜具有优异的阻气性。

3. 发明申请

US20090057659A1 PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD OF THE PHOTOELECTRIC CONVERSION ELEMENT 有权
标题翻译：光电转换元件，固态图像拾取器件及光电转换元件的制造方法
公开(公告)号：US20090057659A1
公开(公告)日：2009-03-05
申请号：US12198370
申请日：2008-08-26
申请人： Yoshiki MAEHARA , Takashi GOTO , Kiyohiko TSUTSUMI , Kyohei OGAWA , Takashi KOMIYAMA , Takeshi SENGA , Takehiro KASAHARA
发明人： Yoshiki MAEHARA , Takashi GOTO , Kiyohiko TSUTSUMI , Kyohei OGAWA , Takashi KOMIYAMA , Takeshi SENGA , Takehiro KASAHARA
IPC分类号： H01L51/10
CPC分类号： H01L51/4213 , H01L27/307 , H01L51/007 , H01L51/0081 , H01L51/0092 , H01L51/4246 , Y02E10/549 , Y02P70/521
摘要： A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.
摘要翻译：光电转换元件包括：一对电极; 和一对电极之间的有机光电转换层，其中电极之一是收集在有机光电转换层中产生的电子的第一电极; 电极中的另一个是收集在有机光电转换层中产生的空穴的第二电极; 并且所述光电转换元件还包括空穴阻挡层，所述空穴阻挡层包含氧化硅并且在所述电极之间施加偏置电压的同时禁止从所述第一电极向所述有机光电转换层注入空穴，所述空穴阻挡层设置在所述第一电极和有机光电转换层，氧化硅的氧/硅组成比为0.5以上且1.2以下。

4. 发明申请

US20110064932A1 GAS BARRIER COATING AND GAS BARRIER FILM 审中-公开
标题翻译：气体阻隔涂层和气体阻隔膜
公开(公告)号：US20110064932A1
公开(公告)日：2011-03-17
申请号：US12884468
申请日：2010-09-17
申请人： Toshiya TAKAHASHI , Takeshi SENGA , Kouji TONOHARA
发明人： Toshiya TAKAHASHI , Takeshi SENGA , Kouji TONOHARA
IPC分类号： B32B27/06 , B32B33/00 , C09K3/00
CPC分类号： C23C16/345 , C23C16/52
摘要： Gas barrier coatings and gas barrier films are used in displays and so forth. Described gas barrier coatings are excellent not only in gas barrier properties but oxidation resistance, transparency and flexibility. A gas barrier coating is based on silicon nitride, and includes: a N/Si compositional ratio of 1 to 1.4; and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si—H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm−1 in a Fourier transform infrared absorption spectrum of the coating, with a ratio [I(Si—H)/I(Si—N)] between a peak intensity I(Si—H) of the absorption caused by Si—H stretching vibration and a peak intensity I(Si—H) of an absorption caused by Si—N stretching vibration in the vicinity of 840 cm−1 being 0.03 to 0.15.
摘要翻译：气体阻隔涂层和阻气膜用于显示器等。描述的阻气涂层不仅具有阻气性，而且具有抗氧化性，透明性和柔韧性。气体阻隔涂层是基于氮化硅，并且包括：N / Si组成比为1至1.4; 氢含量为10〜30原子％。在涂层的傅里叶变换红外吸收光谱中，由Si-H伸缩振动引起的吸收峰出现在2170〜2200cm -1的波数，[I（Si-H）/ I（Si- 由Si-H伸缩振动引起的吸收的峰强度I（Si-H）与在840cm -1附近的Si-N伸缩振动引起的吸收的峰值强度I（Si-H） 1为0.03〜0.15。

5. 发明授权

US07655407B2 Method for detecting target substance utilizing probe desorption 有权
标题翻译：利用探针解吸法检测目标物质的方法
公开(公告)号：US07655407B2
公开(公告)日：2010-02-02
申请号：US12029840
申请日：2008-02-12
申请人： Hayato Miyoshi , Takeshi Senga
发明人： Hayato Miyoshi , Takeshi Senga
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6816 , C12Q2563/155 , C12Q2563/149 , C12Q2563/143
摘要： It is an object of the present invention to provide a method for detecting a target substance in a specimen with the use of fine particles, whereby the target substance can be readily detected with the exclusive use of a single type of probe and the detection limit is improved. The present invention provides a method for detecting a target substance in a specimen which comprises the steps of: allowing a complex of a fine particle and a probe to come into contact with a specimen; and detecting changes in physical properties of the fine particle that are caused by desorption of the probe from the fine particle due to interaction between the target substance in the specimen and the probe.
摘要翻译：本发明的目的是提供一种使用细小颗粒检测样品中的目标物质的方法，由此可以通过使用单一探针来容易地检测目标物质，检测限为改进。本发明提供一种检测试样中的目标物质的方法，包括以下步骤：使微粒和探针的复合物与样品接触; 并且由于样品中的目标物质与探针之间的相互作用，检测由微粒解吸所引起的微粒的物理性质的变化。

6. 发明申请

US20090075098A1 ENVIRONMENT-SENSITIVE DEVICE, AND METHOD FOR SEALING ENVIRONMENT- SENSITIVE ELEMENT 审中-公开
标题翻译：环境敏感装置和密封环境敏感元件的方法
公开(公告)号：US20090075098A1
公开(公告)日：2009-03-19
申请号：US12234124
申请日：2008-09-19
申请人： Jiro TSUKAHARA , Shigehide Ito , Takeshi Senga
发明人： Jiro TSUKAHARA , Shigehide Ito , Takeshi Senga
IPC分类号： B32B27/30 , B32B9/00 , B32B37/00
CPC分类号： H01L51/5259 , H01L51/5253 , H01L51/5256 , Y10T156/10 , Y10T428/31667
摘要： A device comprising an environment-sensitive element and a barrier laminate in that order on a substrate, wherein the barrier laminate comprises at least one silicon hydronitride layer and at least one other inorganic layer. The device is highly resistant to deterioration by water vapor.
摘要翻译：一种在衬底上依次包括环境敏感元件和阻挡层叠体的器件，其中所述阻挡层压体包括至少一个氢化氮化硅层和至少一个其它无机层。该装置高度耐水蒸气劣化。

7. 发明授权

US08586189B2 Gas-barrier film and organic device comprising same 有权
标题翻译：气体阻隔膜和包含它的有机器件
公开(公告)号：US08586189B2
公开(公告)日：2013-11-19
申请号：US12211498
申请日：2008-09-16
申请人： Shigehide Ito , Takeshi Senga
发明人： Shigehide Ito , Takeshi Senga
IPC分类号： B32B9/04 , B32B13/12 , C01C1/02 , H01L21/311
CPC分类号： C23C16/345 , C23C16/30 , H01L51/0097 , H01L51/5253 , H01L51/5256 , H01L2251/5338 , H01L2251/5346 , Y02E10/549 , Y10T428/1068 , Y10T428/265 , Y10T428/31663 , Y10T428/31667
摘要： A gas-barrier film comprising at least one silicon hydronitride layer and at least one silicon nitride layer on a surface of a flexible supporting substrate. The film has an excellent gas-barrier property.
摘要翻译：一种阻气膜，其在柔性支撑基材的表面上包含至少一个氢化氮化硅层和至少一个氮化硅层。该膜具有优异的阻气性。

8. 发明授权

US08133577B2 Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film 有权
标题翻译：硅氮复合膜，阻气膜和使用硅氮复合膜的薄膜器件
公开(公告)号：US08133577B2
公开(公告)日：2012-03-13
申请号：US12261727
申请日：2008-10-30
申请人： Teruhiko Kuramachi , Tomoo Murakami , Takeshi Senga , Jiro Tsukahara
发明人： Teruhiko Kuramachi , Tomoo Murakami , Takeshi Senga , Jiro Tsukahara
IPC分类号： B32B9/00
CPC分类号： C23C16/308 , C23C16/345 , H01L51/448 , H01L51/5256 , Y10T428/24388 , Y10T428/26
摘要： A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, 0≦z
摘要翻译：根据本发明第一方面的硅氮化合物膜由组成式Si 3 N x O y H z表示的材料制成，其中10＆lt; 1;（3x + 2y）＆nlE; 12,3.4＆nlE; x＆lt; e; 4.0,0＆ 0＆nlE; z <2.0，在材料的傅里叶变换红外吸收光谱中出现在2150cm -1附近的第一峰的第一区域的峰面积比，并且对应于Si-H伸缩振动，在傅里叶变换红外吸收光谱中出现在810cm -1附近的对应于Si-N伸缩振动的第二峰的第二区域小于0.2，硅 - 氮化合物膜的厚度t （纳米）和满足不等式的密度d（g / cm3），1.9＆nlE; d＆nlE; 2.5和-700d + 1930＆lt; 6t＆nlE; -700d + 2530。

9. 发明授权

US07936035B2 Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element 有权
标题翻译：光电转换元件，固态图像拾取器件以及光电转换元件的制造方法
公开(公告)号：US07936035B2
公开(公告)日：2011-05-03
申请号：US12198370
申请日：2008-08-26
申请人： Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
发明人： Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
IPC分类号： H01L31/00
CPC分类号： H01L51/4213 , H01L27/307 , H01L51/007 , H01L51/0081 , H01L51/0092 , H01L51/4246 , Y02E10/549 , Y02P70/521
摘要： A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.
摘要翻译：光电转换元件包括：一对电极; 和一对电极之间的有机光电转换层，其中电极之一是收集在有机光电转换层中产生的电子的第一电极; 电极中的另一个是收集在有机光电转换层中产生的空穴的第二电极; 并且所述光电转换元件还包括空穴阻挡层，所述空穴阻挡层包含氧化硅并且在所述电极之间施加偏置电压的同时禁止从所述第一电极向所述有机光电转换层注入空穴，所述空穴阻挡层设置在所述第一电极和有机光电转换层，氧化硅的氧/硅组成比为0.5以上且1.2以下。

10. 发明申请

US20070098920A1 Optical film, polarizing plate and liquid crystal display 审中-公开
标题翻译：光学膜，偏光板和液晶显示器
公开(公告)号：US20070098920A1
公开(公告)日：2007-05-03
申请号：US11528285
申请日：2006-09-28
申请人： Tsuyoshi Yamamoto , Takeshi Senga , Masaharu Kawai
发明人： Tsuyoshi Yamamoto , Takeshi Senga , Masaharu Kawai
IPC分类号： C09K19/00 , G02B5/30
CPC分类号： C08F214/18 , C08F220/24 , C08F220/38 , C08F220/54 , C08F222/1006 , C09K2019/0429 , G02B5/3016 , Y10T428/10 , Y10T428/1041
摘要： An optical film is provided and has a support and an optically anisotropic layer containing a fluorine-containing polymer and a liquid crystal compound. The relationship between the photoelectron takeoff angle φ(°) and the CFn intensity ratio P(%) obtained by AR-XPS measurement of the optically anisotropic layer gives P of 10% to 25% at φ of 20° and P of 15% to 20% at φ of 30°.
摘要翻译：提供了一种光学膜，并具有载体和含有含氟聚合物和液晶化合物的光学各向异性层。通过光学各向异性层的AR-XPS测量获得的光电子起飞角度phi（°）与CFn强度比P（％）之间的关系，在phi为20°时P为10％〜25％，P为15％，P为15％ 30％的phi为20％。

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