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1. 发明申请

US20080246107A1 SOLID STATE IMAGING DEVICE AND FABRICATION METHOD OF SOLID STATE IMAGING DEVICE 有权
标题翻译：实体状态成像装置和固态成像装置的制造方法
公开(公告)号：US20080246107A1
公开(公告)日：2008-10-09
申请号：US12059151
申请日：2008-03-31
申请人： Yoshiki MAEHARA
发明人： Yoshiki MAEHARA
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above the substrate; a photoelectric conversion film on or above the lower electrode; and an upper electrode on or above the photoelectric conversion film. The device further comprises: a first inorganic material film that protects each of the photoelectric conversion portions, is formed by a first method and is above the upper electrode and below the color filters; a second inorganic material film that prevents characteristic deterioration of the photoelectric conversion portion caused by the first method, is formed by a second method and is between the upper electrode and the first inorganic material film; and a polymeric material film that enhances a function of the first inorganic material film and is on or above the first inorganic material film.
摘要翻译：固态成像装置包括：在基板上或上方的光电转换部分; 以及各个光电转换部分上或上方的滤色器。每个光电转换部分包括：在基板上或上方的下电极; 在下电极上或上方的光电转换膜; 以及在光电转换膜上或上方的上电极。该装置还包括：通过第一种方法形成保护每个光电转换部分的第一无机材料膜，并且在上电极之上和滤色器下方形成; 通过第二种方法形成防止由第一种方法引起的光电转换部分的特性劣化的第二种无机材料膜，并且位于上电极和第一无机材料膜之间; 以及增强第一无机材料膜的功能并且在第一无机材料膜上或上方的聚合物材料膜。

2. 发明授权

US08803211B2 Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope 有权
标题翻译：固态成像装置，制造固态成像装置，数码相机，数码摄像机，手机和内窥镜的过程
公开(公告)号：US08803211B2
公开(公告)日：2014-08-12
申请号：US13587769
申请日：2012-08-16
申请人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
发明人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
IPC分类号： H01L31/062
CPC分类号： H04N5/3532 , H01L27/307 , H01L51/4273 , H01L51/448 , H04N5/363 , H04N5/3745 , H04N9/045 , Y02E10/549
摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
摘要翻译：固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极密封层; 彩色滤光片; 一个读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离电位有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属氧化物，金属氮化物和金属氮氧化物。

3. 发明申请

US20120305926A1 SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE 有权
标题翻译：固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜
公开(公告)号：US20120305926A1
公开(公告)日：2012-12-06
申请号：US13587769
申请日：2012-08-16
申请人： Toshihiro NAKATANI , Takashi GOTO , Yoshiki MAEHARA , Hideyuki SUZUKI
发明人： Toshihiro NAKATANI , Takashi GOTO , Yoshiki MAEHARA , Hideyuki SUZUKI
IPC分类号： H01L31/0232
CPC分类号： H04N5/3532 , H01L27/307 , H01L51/4273 , H01L51/448 , H04N5/363 , H04N5/3745 , H04N9/045 , Y02E10/549
摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
摘要翻译：固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极密封层; 彩色滤光片; 读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离势有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属氧化物，金属氮化物和金属氮氧化物。

4. 发明授权

US07897426B2 Solid state imaging device and fabrication method of solid state imaging device 有权
标题翻译：固态成像装置及固态成像装置的制造方法
公开(公告)号：US07897426B2
公开(公告)日：2011-03-01
申请号：US12059151
申请日：2008-03-31
申请人： Yoshiki Maehara
发明人： Yoshiki Maehara
IPC分类号： H01L21/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above the substrate; a photoelectric conversion film on or above the lower electrode; and an upper electrode on or above the photoelectric conversion film. The device further comprises: a first inorganic material film that protects each of the photoelectric conversion portions, is formed by a first method and is above the upper electrode and below the color filters; a second inorganic material film that prevents characteristic deterioration of the photoelectric conversion portion caused by the first method, is formed by a second method and is between the upper electrode and the first inorganic material film; and a polymeric material film that enhances a function of the first inorganic material film and is on or above the first inorganic material film.
摘要翻译：固态成像装置包括：在基板上或上方的光电转换部分; 以及各个光电转换部分上或上方的滤色器。每个光电转换部分包括：在基板上或上方的下电极; 在下电极上或上方的光电转换膜; 以及在光电转换膜上或上方的上电极。该装置还包括：通过第一种方法形成保护每个光电转换部分的第一无机材料膜，并且在上电极之上和滤色器下方形成; 通过第二种方法形成防止由第一种方法引起的光电转换部分的特性劣化的第二种无机材料膜，并且位于上电极和第一无机材料膜之间; 以及增强第一无机材料膜的功能并且在第一无机材料膜上或上方的聚合物材料膜。

5. 发明申请

US20070215204A1 Photoelectric conversion device and solid-state imaging device 有权
标题翻译：光电转换装置和固态成像装置
公开(公告)号：US20070215204A1
公开(公告)日：2007-09-20
申请号：US11723110
申请日：2007-03-16
申请人： Yoshiki Maehara
发明人： Yoshiki Maehara
IPC分类号： H01L31/00
CPC分类号： H01L27/14647 , H01L31/0216
摘要： A photoelectric conversion device including: a first electrode; a photoelectric conversion layer; and a second electrode, in this order, wherein the photoelectric conversion device further includes: a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photoelectric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.
摘要翻译：一种光电转换装置，包括：第一电极; 光电转换层; 和第二电极，其中所述光电转换装置还包括：覆盖所述第一电极，所述光电转换层和所述第二电极的劣化因子吸附和/或反应层，并且具有吸附的吸附性中的至少一种劣化因子和与劣化因子反应的反应性; 以及钝化层，其覆盖所述劣化因子吸附和/或反应层以保护所述第一电极，所述光电转换层和所述第二电极。

6. 发明申请

US20060110585A1 Films having multilayer heterostructure, process for producing the same and optical devices using the same 审中-公开
标题翻译：具有多层异质结构的膜，其制造方法和使用其的光学器件
公开(公告)号：US20060110585A1
公开(公告)日：2006-05-25
申请号：US10523369
申请日：2003-08-05
申请人： Seimei Shiratori , Yoshiki Maehara , Taichi Kobayashi , Masato Yoshikawa
发明人： Seimei Shiratori , Yoshiki Maehara , Taichi Kobayashi , Masato Yoshikawa
IPC分类号： B32B3/00
CPC分类号： H01L51/4226 , H01L51/0038 , H01L51/0078 , H01L51/4213 , H01L51/424 , H01L51/4253 , Y02E10/549 , Y02P70/521 , Y10T428/24901
摘要： A film having a multilayer heterostructure which has at least one organic layer formed by self-assembly, characterized in that the organic layer contains from 1 to 100 mM of a sensitizing dye; and a film having a multilayer heterostructure which has at least one organic layer and at least one inorganic layer each formed by self-assembly, characterized in that the organic layer contains an aromatic compound. It is intended to provide these multilayer heterostructure films having advanced functions, a process for producing the same, and optical devices having advanced functions with the use of these films.
摘要翻译：具有多层异质结构的膜，其具有通过自组装形成的至少一个有机层，其特征在于，所述有机层含有1〜100mM的增感染料; 以及具有多层异质结构的膜，其具有至少一个有机层和至少一个通过自组装形成的无机层，其特征在于，所述有机层含有芳族化合物。旨在提供具有先进功能的这些多层异质结构膜，其制造方法和使用这些膜的具有高级功能的光学器件。

7. 发明授权

US08704281B2 Process of making a solid state imaging device 有权
标题翻译：制作固态成像装置的过程
公开(公告)号：US08704281B2
公开(公告)日：2014-04-22
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/113
CPC分类号： H01L27/307 , B82Y10/00 , H01L51/001 , H01L51/0047 , H01L51/0059 , H01L51/4253
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.
摘要翻译：一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器，读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面的光电层基本上共面。

8. 发明授权

US08637911B2 Process of making a solid state imaging device 有权
公开(公告)号：US08637911B2
公开(公告)日：2014-01-28
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/113
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

9. 发明申请

US20120161270A1 SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE 有权
标题翻译：固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜
公开(公告)号：US20120161270A1
公开(公告)日：2012-06-28
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/307 , B82Y10/00 , H01L51/001 , H01L51/0047 , H01L51/0059 , H01L51/4253
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.
摘要翻译：一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器，读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面的光电层基本上共面。

10. 发明授权

US08193542B2 Photoelectric apparatus and imaging apparatus including the same 失效
标题翻译：光电设备及其成像设备
公开(公告)号：US08193542B2
公开(公告)日：2012-06-05
申请号：US12490920
申请日：2009-06-24
申请人： Yoshiki Maehara
发明人： Yoshiki Maehara
IPC分类号： H01L27/15 , H01L29/20 , H01L33/00
CPC分类号： H01L27/307 , H01L27/14627 , H01L27/14645
摘要： A photoelectric apparatus includes a substrate and an array of a plurality of pixels each having at least one photoelectric device including a lower electrode over the substrate, a photoelectric layer over the lower electrode, and an upper electrode over the photoelectric layer, the photoelectric apparatus further includes an electrically conductive partition between adjacent two of the pixels, the conductive partition being electrically connected with the upper electrode and a transparent insulating layer on the upper electrode, and the pixels is individually sealed in by the partition and the transparent insulating layer.
摘要翻译：光电设备包括基板和多个像素的阵列，每个像素具有至少一个光电器件，该光电器件包括在该基板上的下电极，在该下电极上方的光电层，以及该光电层上的上电极，该光电设备包括在相邻的两个像素之间的导电隔板，所述导电隔板与上电极电连接，并且在上电极上具有透明绝缘层，并且像素由隔板和透明绝缘层分别密封。

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