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1. 发明授权

US07936035B2 Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element 有权
标题翻译：光电转换元件，固态图像拾取器件以及光电转换元件的制造方法
公开(公告)号：US07936035B2
公开(公告)日：2011-05-03
申请号：US12198370
申请日：2008-08-26
申请人： Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
发明人： Yoshiki Maehara , Takashi Goto , Kiyohiko Tsutsumi , Kyohei Ogawa , Takashi Komiyama , Takeshi Senga , Takehiro Kasahara
IPC分类号： H01L31/00
CPC分类号： H01L51/4213 , H01L27/307 , H01L51/007 , H01L51/0081 , H01L51/0092 , H01L51/4246 , Y02E10/549 , Y02P70/521
摘要： A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.
摘要翻译：光电转换元件包括：一对电极; 和一对电极之间的有机光电转换层，其中电极之一是收集在有机光电转换层中产生的电子的第一电极; 电极中的另一个是收集在有机光电转换层中产生的空穴的第二电极; 并且所述光电转换元件还包括空穴阻挡层，所述空穴阻挡层包含氧化硅并且在所述电极之间施加偏置电压的同时禁止从所述第一电极向所述有机光电转换层注入空穴，所述空穴阻挡层设置在所述第一电极和有机光电转换层，氧化硅的氧/硅组成比为0.5以上且1.2以下。

2. 发明授权

US08232616B2 Solid-state imaging device and process of making solid state imaging device 有权
标题翻译：固态成像装置和制作固态成像装置的过程
公开(公告)号：US08232616B2
公开(公告)日：2012-07-31
申请号：US12870366
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki , Daigo Sawaki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki , Daigo Sawaki
IPC分类号： H01L27/146 , H01L51/00
CPC分类号： H01L27/307 , H01L27/14609 , H01L27/14625 , H01L27/14629 , H01L27/14645 , H01L27/14687 , H01L27/14692 , H01L51/0053 , H01L51/0059 , H01L51/4273 , Y02E10/549 , Y02P70/521
摘要： A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters.
摘要翻译：固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极密封层; 彩色滤光片; 以及如本文所定义的读出电路，光电层包含有机p型半导体和有机n型半导体，电荷阻挡层的电离电位和有机n型半导体在光电层中的电子亲和力具有至少1eV，并且所述固态成像装置还包括在像素阵列的相邻像素的相邻滤色器之间的透明分隔壁，所述分隔壁由折射率低于形成所述像素的材料的透明材料制成滤色片

3. 发明授权

US08378397B2 Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope 有权
标题翻译：固态成像装置，制造固态成像装置，数码相机，数码摄像机，手机和内窥镜的过程
公开(公告)号：US08378397B2
公开(公告)日：2013-02-19
申请号：US12870321
申请日：2010-08-27
申请人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
发明人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
IPC分类号： H01L31/062
CPC分类号： H04N5/3532 , H01L27/307 , H01L51/4273 , H01L51/448 , H04N5/363 , H04N5/3745 , H04N9/045 , Y02E10/549
摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
摘要翻译：固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极密封层; 彩色滤光片; 读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离势有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属氧化物，金属氮化物和金属氮氧化物。

4. 发明授权

US08803211B2 Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope 有权
标题翻译：固态成像装置，制造固态成像装置，数码相机，数码摄像机，手机和内窥镜的过程
公开(公告)号：US08803211B2
公开(公告)日：2014-08-12
申请号：US13587769
申请日：2012-08-16
申请人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
发明人： Toshihiro Nakatani , Takashi Goto , Yoshiki Maehara , Hideyuki Suzuki
IPC分类号： H01L31/062
CPC分类号： H04N5/3532 , H01L27/307 , H01L51/4273 , H01L51/448 , H04N5/363 , H04N5/3745 , H04N9/045 , Y02E10/549
摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
摘要翻译：固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极密封层; 彩色滤光片; 一个读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离电位有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属氧化物，金属氮化物和金属氮氧化物。

5. 发明授权

US08704281B2 Process of making a solid state imaging device 有权
标题翻译：制作固态成像装置的过程
公开(公告)号：US08704281B2
公开(公告)日：2014-04-22
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/113
CPC分类号： H01L27/307 , B82Y10/00 , H01L51/001 , H01L51/0047 , H01L51/0059 , H01L51/4253
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.
摘要翻译：一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器，读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面的光电层基本上共面。

6. 发明授权

US08637911B2 Process of making a solid state imaging device 有权
公开(公告)号：US08637911B2
公开(公告)日：2014-01-28
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/113
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

7. 发明申请

US20120161270A1 SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE 有权
标题翻译：固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜
公开(公告)号：US20120161270A1
公开(公告)日：2012-06-28
申请号：US13392587
申请日：2010-08-27
申请人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
发明人： Yoshiki Maehara , Takashi Goto , Hideyuki Suzuki
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/307 , B82Y10/00 , H01L51/001 , H01L51/0047 , H01L51/0059 , H01L51/4253
摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.
摘要翻译：一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器，读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面的光电层基本上共面。

8. 发明申请

US20060196533A1 Photoelectric conversion layer-stacked element and method for producing the same 审中-公开
标题翻译：光电转换层叠体元件及其制造方法
公开(公告)号：US20060196533A1
公开(公告)日：2006-09-07
申请号：US11362776
申请日：2006-02-28
申请人： Yoshiki Maehara
发明人： Yoshiki Maehara
IPC分类号： H02N6/00
CPC分类号： H01L27/307 , H01L51/424 , H01L51/448 , Y02E10/549
摘要： A photoelectric conversion element comprising: a pixel electrode; at least one photoelectric conversion layer containing an organic semiconductor; a transparent counter electrode; and a passivation layer containing an inorganic material, provided in this order.
摘要翻译：一种光电转换元件，包括：像素电极; 含有有机半导体的至少一个光电转换层; 透明对电极; 以及含有无机材料的钝化层。

9. 发明授权

US08822980B2 P-type organic semiconductor/fullerene photoelectric conversion layer 有权
标题翻译： P型有机半导体/富勒烯光电转换层
公开(公告)号：US08822980B2
公开(公告)日：2014-09-02
申请号：US12254624
申请日：2008-10-20
申请人： Masayuki Hayashi , Yoshiki Maehara
发明人： Masayuki Hayashi , Yoshiki Maehara
IPC分类号： H01L51/00 , H01L27/146
CPC分类号： H01L27/14645 , H01L27/14629 , H01L27/14647
摘要： A photoelectric conversion element is provided and includes a photoelectric conversion portion which includes: a pair of electrodes including an electron-collecting electrode and a hole-collecting electrode; and a photoelectric conversion layer between the pair of electrodes. At least part of the photoelectric conversion layer includes a mixture layer of a p-type organic semiconductor and a fullerene, and a volume ratio of the fullerene to the p-type organic semiconductor in the photoelectric conversion layer is such that the volume ratio on a side of the electron-collecting electrode is smaller than the volume ratio on a side of the hole-collecting electrode.
摘要翻译：提供一种光电转换元件，包括：光电转换部，其包括：包括电子收集电极和空穴收集电极的一对电极; 和一对电极之间的光电转换层。光电转换层的至少一部分包括p型有机半导体和富勒烯的混合层，并且光电转换层中的富勒烯与p型有机半导体的体积比使得在电子收集电极的一侧小于空穴收集电极侧的体积比。

10. 发明授权

US07659499B2 Photoelectric conversion device and solid-state imaging device 有权
标题翻译：光电转换装置和固态成像装置
公开(公告)号：US07659499B2
公开(公告)日：2010-02-09
申请号：US11723110
申请日：2007-03-16
申请人： Yoshiki Maehara
发明人： Yoshiki Maehara
IPC分类号： H01L27/14
CPC分类号： H01L27/14647 , H01L31/0216
摘要： A photoelectric conversion device including: a first electrode; a photoelectric conversion layer; and a second electrode, in this order, wherein the photoelectric conversion device further includes: a deterioration factor adsorptive and/or reactive layer which covers the first electrode, the photoelectric conversion layer and the second electrode and which has at least one of adsorptivity of adsorbing a deterioration factor and reactivity of reacting with the deterioration factor; and a passivation layer which covers the deterioration factor adsorptive and/or reactive layer to protect the first electrode, the photoelectric conversion layer and the second electrode.
摘要翻译：一种光电转换装置，包括：第一电极; 光电转换层; 和第二电极，其中所述光电转换装置还包括：覆盖所述第一电极，所述光电转换层和所述第二电极的劣化因子吸附和/或反应层，并且具有吸附的吸附性中的至少一种劣化因子和与劣化因子反应的反应性; 以及钝化层，其覆盖所述劣化因子吸附和/或反应层以保护所述第一电极，所述光电转换层和所述第二电极。

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