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1. 发明申请

US20080138746A1 Pattern formation method using fine pattern formation material for use in semiconductor fabrication step 审中-公开
标题翻译：使用精细图案形成材料的图案形成方法用于半导体制造步骤
公开(公告)号：US20080138746A1
公开(公告)日：2008-06-12
申请号：US11896870
申请日：2007-09-06
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/26
CPC分类号： G03F7/40
摘要： A resist pattern is formed on the major surface of a semiconductor substrate, and coated with a water-soluble pattern formation material having thermal crosslinking properties in the presence of an acid. A crosslinking film is formed by heating in that portion of the water-soluble pattern formation material which is in contact with the resist pattern. A pattern is formed by removing a portion of the water-soluble pattern formation material except for the crosslinking film by using an aqueous alkali solution containing a surfactant.
摘要翻译：在半导体基板的主表面上形成抗蚀剂图案，并在酸存在下涂布具有热交联性的水溶性图案形成材料。在与抗蚀剂图案接触的部分水溶性图案形成材料中加热形成交联膜。通过使用含有表面活性剂的碱性水溶液除去交联膜以外的一部分水溶性图案形成材料，形成图案。

2. 发明授权

US08148054B2 Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns 失效
标题翻译：浸渍多曝光方法和浸没曝光系统，用于分别进行微图案和非微图案的多次曝光
公开(公告)号：US08148054B2
公开(公告)日：2012-04-03
申请号：US12140653
申请日：2008-06-17
申请人： Takehiro Kondoh
发明人： Takehiro Kondoh
IPC分类号： G03F7/26
CPC分类号： G03F7/70925 , G03F7/091 , G03F7/70283 , G03F7/70341 , G03F7/70466 , H01L21/0276
摘要： This invention discloses an immersion multiple-exposure method including a first exposure step of performing, using a first mask, immersion exposure of a photoresist film formed on a substrate, a cleaning step of clearing the surface of the substrate, and a second exposure step of performing immersion exposure of the photoresist film using a second mask. No heating process is performed between the first exposure step and the second exposure step.
摘要翻译：本发明公开了一种浸渍式多曝光方法，包括：第一曝光步骤，使用第一掩模进行浸渍曝光，形成在基板上的光致抗蚀剂膜，清洁基板的表面的清洁步骤，以及第二曝光步骤使用第二掩模进行光致抗蚀剂膜的浸没曝光。在第一曝光步骤和第二曝光步骤之间不进行加热处理。

3. 发明申请

US20090117498A1 PATTERN FORMING METHOD 失效
标题翻译：图案形成方法
公开(公告)号：US20090117498A1
公开(公告)日：2009-05-07
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/20
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

4. 发明授权

US07527918B2 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07527918B2
公开(公告)日：2009-05-05
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

5. 发明授权

US08975178B2 Method of manufacturing a memory device using fine patterning techniques 有权
标题翻译：使用精细图案化技术制造存储器件的方法
公开(公告)号：US08975178B2
公开(公告)日：2015-03-10
申请号：US13602841
申请日：2012-09-04
申请人： Keisuke Kikutani , Satoshi Nagashima , Hidefumi Mukai , Takehiro Kondoh , Hisataka Meguro
发明人： Keisuke Kikutani , Satoshi Nagashima , Hidefumi Mukai , Takehiro Kondoh , Hisataka Meguro
IPC分类号： H01L21/4763 , H01L21/768 , H01L21/033 , H01L21/3213 , H01L27/115
CPC分类号： H01L21/76801 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/11519 , H01L27/11524 , H01L27/11548 , H01L27/11565 , H01L27/1157 , H01L27/11575
摘要： According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.
摘要翻译：根据一个实施例，一种制造器件的方法包括形成包括在第一和第二区域之间延伸的线部分并具有第一宽度和具有大于第一宽度的尺寸的条纹的第一芯体，在边缘上形成掩模并且在所述第一芯上的第一侧壁上，移除所述第一芯，使得具有大于所述第一宽度的尺寸的剩余部分形成在所述掩模下方，在对应于所述第一侧壁和所述剩余部分的图案上形成第二侧壁，第二侧壁具有小于第一宽度的第二宽度并且面向小于第一区域中的第一宽度的第一间隔并且面向大于第二区域中的第一间隔的第二间隔。

6. 发明申请

US20090305167A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090305167A1
公开(公告)日：2009-12-10
申请号：US12477744
申请日：2009-06-03
申请人： Takehiro KONDOH , Eishi SHIOBARA
发明人： Takehiro KONDOH , Eishi SHIOBARA
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , Y10S430/106 , Y10S430/114
摘要： In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
摘要翻译：在制造半导体器件的方法中，在衬底上形成抗蚀剂膜，并且加工成具有开口以形成第一抗蚀剂图案。形成含有将抗蚀剂膜的状态改变为显影剂的可溶性状态的添加剂的含有添加剂层，以覆盖第一抗蚀剂图案。在第一抗蚀剂图案的开口中形成具有通过含有添加剂而改变为显影剂的可溶性状态的第一树脂膜。添加剂扩散到第一抗蚀剂图案和第一树脂膜中以形成可以溶解在显影剂中的第一和第二添加剂扩散部分。通过显影剂去除第一和第二添加剂扩散部分，以形成由第一抗蚀剂图案和第一树脂膜中的剩余部分制成的第二抗蚀剂图案。

7. 发明申请

US20080289656A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20080289656A1
公开(公告)日：2008-11-27
申请号：US12126087
申请日：2008-05-23
申请人： Takehiro KONDOH
发明人： Takehiro KONDOH
IPC分类号： B08B7/00 , B08B13/00
CPC分类号： B08B3/024 , H01L21/67034 , H01L21/67051
摘要： According to one aspect of the present invention, there is provided a substrate processing method of drying a substrate to be processed by rotating the substrate while supplying a cleaning solution onto a surface of the substrate, the method comprising, when moving, on the substrate, a cleaning solution supply position where the cleaning solution is supplied on the surface of the substrate in rotation, measuring a water level in a predetermined portion on the surface of the substrate in at least a partial region on the surface of the substrate, and controlling based on the measured water level at least one of a cleaning solution supply position moving velocity when moving the position where the cleaning solution is supplied and a rotational speed of the substrate.
摘要翻译：根据本发明的一个方面，提供了一种基板处理方法，该方法通过在将清洁溶液供应到基板的表面上的同时旋转基板来干燥待处理的基板，该方法包括在移动时在基板上，清洁溶液供给位置，其中清洁溶液在旋转的基板的表面上供应，在基板表面的至少部分区域中测量基板表面上的预定部分中的水位，并且基于在测量的水位上，当移动提供清洁溶液的位置和基板的旋转速度时，清洁溶液供应位置移动速度中的至少一个。

8. 发明申请

US20070010028A1 Chemical solution qualification method, semiconductor device fabrication method, and liquid crystal display manufacturing method 审中-公开
标题翻译：化学溶液鉴定方法，半导体器件制造方法和液晶显示器制造方法
公开(公告)号：US20070010028A1
公开(公告)日：2007-01-11
申请号：US11475125
申请日：2006-06-27
申请人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
发明人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
IPC分类号： G01N21/00
CPC分类号： G01N15/14 , G01N2015/1493
摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.
摘要翻译：公开了一种用于限定化学溶液的方法。该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响解。通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

9. 发明申请

US20050130068A1 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

10. 发明授权

US06660455B2 Pattern formation material, pattern formation method, and exposure mask fabrication method 失效
标题翻译：图案形成材料，图案形成方法和曝光掩模制造方法
公开(公告)号：US06660455B2
公开(公告)日：2003-12-09
申请号：US09812688
申请日：2001-03-21
申请人： Masamitsu Itoh , Takehiro Kondoh
发明人： Masamitsu Itoh , Takehiro Kondoh
IPC分类号： G03F700
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/38 , Y10S430/143
摘要： This invention provides a pattern formation material for electron beam lithography, which contains an alkali-soluble resin, a photoacid generator, and dissolution inhibiting groups, and also provides a pattern formation method and exposure mask fabrication method using the material. As the dissolution inhibiting groups, this invention uses a first dissolution inhibiting group which increases the sensitivity of the pattern formation material when the material is left to stand in a vacuum after an electron beam irradiation, and a second dissolution inhibiting group which decreases the sensitivity under the same condition. In this invention, the ratio of the first dissolution inhibiting group to the second dissolution inhibiting group is so adjusted that the size of an alkali-soluble portion, which is made soluble in an alkali solution by an electron beam irradiation, is substantially held constant independently of the standing time in a vacuum.
摘要翻译：本发明提供一种电子束光刻用图案形成材料，其含有碱溶性树脂，光致酸发生剂和溶解抑制基团，并且还提供了使用该材料的图案形成方法和曝光掩模制造方法。作为溶解抑制基团，本发明使用第一溶解抑制基团，其在电子束照射后在真空中放置材料时增加图案形成材料的灵敏度，以及降低灵敏度的第二溶解抑制基团同样的条件。在本发明中，第一溶解抑制基团与第二溶解抑制基团的比例被调整为使得通过电子束照射可溶于碱溶液的碱溶性部分的尺寸基本上保持恒定不变的时间在真空中。

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