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1. 发明申请

US20070010028A1 Chemical solution qualification method, semiconductor device fabrication method, and liquid crystal display manufacturing method 审中-公开
标题翻译：化学溶液鉴定方法，半导体器件制造方法和液晶显示器制造方法
公开(公告)号：US20070010028A1
公开(公告)日：2007-01-11
申请号：US11475125
申请日：2006-06-27
申请人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
发明人： Takehiro Kondoh , Hisako Aoyama , Eishi Shiobara , Shinichi Ito
IPC分类号： G01N21/00
CPC分类号： G01N15/14 , G01N2015/1493
摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.
摘要翻译：公开了一种用于限定化学溶液的方法。该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响解。通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

2. 发明申请

US20050130068A1 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

3. 发明授权

US07527918B2 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07527918B2
公开(公告)日：2009-05-05
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

4. 发明申请

US20080138746A1 Pattern formation method using fine pattern formation material for use in semiconductor fabrication step 审中-公开
标题翻译：使用精细图案形成材料的图案形成方法用于半导体制造步骤
公开(公告)号：US20080138746A1
公开(公告)日：2008-06-12
申请号：US11896870
申请日：2007-09-06
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/26
CPC分类号： G03F7/40
摘要： A resist pattern is formed on the major surface of a semiconductor substrate, and coated with a water-soluble pattern formation material having thermal crosslinking properties in the presence of an acid. A crosslinking film is formed by heating in that portion of the water-soluble pattern formation material which is in contact with the resist pattern. A pattern is formed by removing a portion of the water-soluble pattern formation material except for the crosslinking film by using an aqueous alkali solution containing a surfactant.
摘要翻译：在半导体基板的主表面上形成抗蚀剂图案，并在酸存在下涂布具有热交联性的水溶性图案形成材料。在与抗蚀剂图案接触的部分水溶性图案形成材料中加热形成交联膜。通过使用含有表面活性剂的碱性水溶液除去交联膜以外的一部分水溶性图案形成材料，形成图案。

5. 发明申请

US20090117498A1 PATTERN FORMING METHOD 失效
标题翻译：图案形成方法
公开(公告)号：US20090117498A1
公开(公告)日：2009-05-07
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/20
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

6. 发明授权

US07851139B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US07851139B2
公开(公告)日：2010-12-14
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/40
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

7. 发明授权

US08097398B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08097398B2
公开(公告)日：2012-01-17
申请号：US12477744
申请日：2009-06-03
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , Y10S430/106 , Y10S430/114
摘要： In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
摘要翻译：在制造半导体器件的方法中，在衬底上形成抗蚀剂膜，并且加工成具有开口以形成第一抗蚀剂图案。形成含有将抗蚀剂膜的状态改变为显影剂的可溶性状态的添加剂的含有添加剂层，以覆盖第一抗蚀剂图案。在第一抗蚀剂图案的开口中形成具有通过含有添加剂而改变为显影剂的可溶性状态的第一树脂膜。添加剂扩散到第一抗蚀剂图案和第一树脂膜中以形成可以溶解在显影剂中的第一和第二添加剂扩散部分。通过显影剂去除第一和第二添加剂扩散部分，以形成由第一抗蚀剂图案和第一树脂膜中的剩余部分制成的第二抗蚀剂图案。

8. 发明授权

US07662542B2 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US07662542B2
公开(公告)日：2010-02-16
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下步骤。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

9. 发明申请

US20060189147A1 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US20060189147A1
公开(公告)日：2006-08-24
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03C1/76 , H01L21/302
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following teps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下脚趾。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

10. 发明授权

US08187797B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08187797B2
公开(公告)日：2012-05-29
申请号：US12562423
申请日：2009-09-18
申请人： Eishi Shiobara , Shinichi Ito
发明人： Eishi Shiobara , Shinichi Ito
IPC分类号： G03F7/26 , B29C35/08 , B28B7/30
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A template having a first recess pattern is brought into contact with a mask material formed on a substrate. The mask material with which the first recess pattern is filled is cured. A mask material pattern is formed on the substrate by releasing the template from the mask material. A resist pattern is formed to cover a part of the mask material pattern by forming a resist on the mask material pattern and selectively irradiating radiation onto the resist and thereafter developing the resist. The substrate is processed by using the mask material pattern and the resist pattern as a mask.
摘要翻译：具有第一凹部图案的模板与形成在基板上的掩模材料接触。固化第一凹部图案的掩模材料。通过从掩模材料中释放模板，在基板上形成掩模材料图案。通过在掩模材料图案上形成抗蚀剂并选择性地将辐射照射到抗蚀剂上，然后显影抗蚀剂，形成抗蚀剂图案以覆盖掩模材料图案的一部分。通过使用掩模材料图案和抗蚀图案作为掩模来处理基板。

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