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1. 发明授权

US08368031B2 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
公开(公告)号：US08368031B2
公开(公告)日：2013-02-05
申请号：US13243429
申请日：2011-09-23
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： H01J37/147 , H01J37/28
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

2. 发明申请

US20120032079A1 INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM 有权
标题翻译：通过充电颗粒束检查系统和使用系统制造设备的方法
公开(公告)号：US20120032079A1
公开(公告)日：2012-02-09
申请号：US13243429
申请日：2011-09-23
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： H01J37/26 , H01J3/26
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要翻译：电子束检查装置包括：电子光学装置70，具有用于从电子束源向一个电子束照射物体的电子 - 光学系统;以及用于检测由电子束投射的二次电子图像的检测器，光学系统; 用于相对于电子 - 光学系统保持和移动物体的平台系统50; 微型环境室20，用于向物体供应清洁气体，以防止灰尘与物体接触; 用于容纳平台装置的工作室31，工作室可控制为具有真空气氛; 设置在微环境室和工作室之间的至少两个装载室41,42适于独立控制以具有真空气氛; 以及用于通过装载室将物体传送到舞台系统的装载器60。

3. 发明申请

US20080173814A1 Electron beam inspection system and inspection method and method of manufacturing devices using the system 有权
公开(公告)号：US20080173814A1
公开(公告)日：2008-07-24
申请号：US12068484
申请日：2008-02-07
申请人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
发明人： Kenji Watanabe , Hirosi Sobukawa , Nobuharu Noji , Tohru Satake , Shoji Yoshikawa , Tsutomu Karimata , Mamoru Nakasuji , Masahiro Hatakeyama , Takeshi Murakami , Yuichiro Yamazaki , Ichirota Nagahama , Takamitsu Nagai , Kazuyoshi Sugihara
IPC分类号： G01N23/00 , G21K5/04
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

4. 发明申请

US20050029451A1 Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device 有权
标题翻译：基板检查装置，基板检查方法及制造半导体装置的方法
公开(公告)号：US20050029451A1
公开(公告)日：2005-02-10
申请号：US10853678
申请日：2004-05-26
申请人： Ichirota Nagahama , Yuichiro Yamazaki , Takamitsu Nagai , Motosuke Miyoshi
发明人： Ichirota Nagahama , Yuichiro Yamazaki , Takamitsu Nagai , Motosuke Miyoshi
IPC分类号： H01J37/28 , G21K7/00 , G01N23/00
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A substrate inspection apparatus includes: an electron beam irradiation device which emits an electron beam and causes the electron beam to irradiate a substrate to be inspected as a primary beam; an electron beam detector which detects at least one of a secondary electron, a reflected electron and a backscattered electron that are generated from the substrate that has been irradiated by the electron beam, and which outputs a signal that forms a one-dimensional or two-dimensional image of a surface of the substrate; a mapping projection optical system which causes imaging of at least one of the secondary electron, the reflected electron and the backscattered electron on the electron beam detector as a secondary beam; and an electromagnetic wave irradiation device which generates an electromagnetic wave and causes the electromagnetic wave to irradiate a location on the surface of the substrate at which the secondary beam is generated.
摘要翻译：基板检查装置包括：电子束照射装置，其发射电子束并使电子束照射待检查的基板作为主光束; 电子束检测器，其检测从已经被电子束照射的衬底产生的二次电子，反射电子和反向散射电子中的至少一个，并输出形成一维或二维的信号，基板的表面的三维图像; 映射投影光学系统，其将二次电子，反射电子和背散射电子中的至少一个成像在电子束检测器上作为次级光束; 以及电磁波照射装置，其产生电磁波，并使电磁波照射到产生二次光束的基板的表面上的位置。

5. 发明授权

US5371371A Magnetic immersion field emission electron gun systems capable of reducing aberration of electrostatic lens 失效
标题翻译：能够减少静电透镜像差的磁性浸没场发射电子枪系统
公开(公告)号：US5371371A
公开(公告)日：1994-12-06
申请号：US112802
申请日：1993-08-27
申请人： Yuichiro Yamazaki , Motosuke Miyoshi , Takamitsu Nagai
发明人： Yuichiro Yamazaki , Motosuke Miyoshi , Takamitsu Nagai
IPC分类号： H01J37/073 , H01J37/10 , H01J37/145 , H01J37/15
CPC分类号： H01J37/073 , H01J2237/06316
摘要： A magnetic immersion field emission electron gun has a vacuum vessel having a central axis in a predetermined direction, a cathode arranged along the central axis of the vacuum vessel for generating an electron beam, an anode for forming an electron beam path by accelerating a generated electron beam in the central axis direction, an electrostatic lens arranged between the cathode and anode for generating an electric field which focuses an accelerated electron beam toward the central axis, a magnetic field generating element arranged around the electron beam path for generating a magnetic field for focusing the electron beam in order to preventing a diameter of the electron beam from expansion by an aberration of the electrostatic lens, and a moving mechanism for moving the magnetic field generating element at a position where a peak point of a strength of the magnetic field generated by the magnetic field generating element coincides with a portion where the aberration of the electrostatic lens becomes most conspicuous. The electron gun having such a configuration can provide an effect of reducing a spherical and chromatic aberration by efficiently providing a lens characteristic to the electrostatic lens even though the entire length of electrostatic lens is long.
摘要翻译：磁浸式场致发射电子枪具有沿预定方向具有中心轴的真空容器，沿着真空容器的中心轴布置的用于产生电子束的阴极，用于通过加速产生的电子形成电子束路径的阳极在中心轴方向上形成光束，静电透镜，其布置在阴极和阳极之间，用于产生将加速电子束朝向中心轴聚焦的电场;围绕电子束路径设置的磁场产生元件，用于产生用于聚焦的磁场电子束，以防止电子束的直径由于静电透镜的像差而膨胀;以及移动机构，用于使磁场产生元件移动到由磁场产生元件产生的磁场的强度的峰值点磁场产生元件与电极的像差部分重合 tatic镜头变得最显眼。具有这种结构的电子枪即使静电透镜的整个长度都很长，也可以通过有效地向静电透镜提供透镜特性来提供减小球面和色差的效果。

6. 发明授权

US08053726B2 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
标题翻译：带电粒子束的检测系统及使用该系统的制造装置的方法
公开(公告)号：US08053726B2
公开(公告)日：2011-11-08
申请号：US12216233
申请日：2008-07-01
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： H01J37/28
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要翻译：电子束检查装置包括：电子光学装置70，具有用于从电子束源向一个电子束照射物体的电子 - 光学系统;以及用于检测由电子束投射的二次电子图像的检测器，光学系统; 用于相对于电子 - 光学系统保持和移动物体的平台系统50; 微型环境室20，用于向物体供应清洁气体，以防止灰尘与物体接触; 用于容纳平台装置的工作室31，工作室可控制为具有真空气氛; 设置在迷你环境室和工作室之间的至少两个装载室41,42适于独立控制以具有真空气氛; 以及用于通过装载室将物体传送到舞台系统的装载器60。

7. 发明授权

US07973281B2 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
标题翻译：半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
公开(公告)号：US07973281B2
公开(公告)日：2011-07-05
申请号：US12458343
申请日：2009-07-08
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： G01N23/00
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
摘要翻译：半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

8. 发明授权

US07573066B2 Semiconductor substrate, substrate inspection method, semiconductor device manufacturing method, and inspection apparatus 失效
标题翻译：半导体衬底，衬底检查方法，半导体器件制造方法和检查装置
公开(公告)号：US07573066B2
公开(公告)日：2009-08-11
申请号：US11730818
申请日：2007-04-04
申请人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
发明人： Hiroyuki Hayashi , Takamitsu Nagai , Tomonobu Noda , Kenichi Kadota , Hisaki Kozaki
IPC分类号： H01L23/58
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
摘要翻译：半导体衬底检查方法包括：产生带电粒子束，并将带电粒子束照射到其表面上形成有接触布线的半导体衬底，半导体衬底的接触布线被设计成在平面图，使得相邻的接触布线中的一个接地到半导体基板，并且相邻的接触布线中的另一个与半导体基板绝缘; 检测从半导体衬底的表面产生的二次带电粒子，反射带电粒子和反向散射带电粒子中的至少一个，以获得信号; 产生具有信号的检查图像，检查图像显示半导体基板的表面的状态; 以及从相邻接触布线的表面获得的检查图像中的亮度差来判断半导体基板是否良好。

9. 发明申请

US20090032708A1 Inspection system by charged particle beam and method of manufacturing devices using the system 有权
公开(公告)号：US20090032708A1
公开(公告)日：2009-02-05
申请号：US12216233
申请日：2008-07-01
申请人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
发明人： Mamoru Nakasuji , Nobuharu Noji , Tohru Satake , Masahiro Hatakeyama , Toshifumi Kimba , Hirosi Sobukawa , Shoji Yoshikawa , Takeshi Murakami , Kenji Watanabe , Tsutomu Karimata , Shin Oowada , Mutsumi Saito , Yuichiro Yamazaki , Takamitsu Nagai , Ichirota Nagahama
IPC分类号： G01N23/00 , H01J3/14
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.

10. 发明授权

US07302091B2 Method and apparatus for determining defect detection sensitivity data, control method of defect detection apparatus, and method and apparatus for detecting defect of semiconductor devices 失效
标题翻译：用于确定缺陷检测灵敏度数据的方法和装置，缺陷检测装置的控制方法以及用于检测半导体器件缺陷的方法和装置
公开(公告)号：US07302091B2
公开(公告)日：2007-11-27
申请号：US10687828
申请日：2003-10-20
申请人： Akira Hamaguchi , Takamitsu Nagai
发明人： Akira Hamaguchi , Takamitsu Nagai
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0002 , G06T7/0004 , G06T7/41 , G06T2207/30148
摘要： A method of determining defect detection sensitivity data, comprises: taking image data from the desired surface areas of each of semiconductor devices, processing at least two of the image data through arithmetic operations and comparing the processed image data with a parameter of defect detection sensitivity substituted by predetermined threshold data to obtain information on defects in the desired areas at least in one-to-one correspondence with any of the image data arithmetically processed, repeating more than once the step of varying the parameter of the defect detection sensitivity to obtain the defect information, so as to obtain more than one sets of combination data on a value of the parameter of the defect detection sensitivity correlated with the defect information, processing more than one sets of the combination data to produce a mathematical function expressing a relation of the desired statistical data with the parameter of the defect detection sensitivity, the mathematical function being used to determine defect detection sensitivity data, the defect detection sensitivity data being used in obtaining the information on the defects in the desired surface areas of the semiconductor devices under defect inspection, and the defect detection sensitivity data defining an existence range of the defect information in the image data which are taken from the desired surface areas of each semiconductor device and which are arithmetically processed in the previous step.
摘要翻译：一种确定缺陷检测灵敏度数据的方法，包括：从每个半导体器件的期望表面区域获取图像数据，通过算术运算处理至少两个图像数据，并将经处理的图像数据与缺陷检测灵敏度取代的参数进行比较通过预定的阈值数据，以至少与所要求的图像数据一一对应地获得关于期望区域中的缺陷的信息，重复多次，改变缺陷检测灵敏度的参数以获得缺陷信息，以获得与缺陷信息相关的缺陷检测灵敏度的参数的值的多于一组的组合数据，处理多于一组的组合数据以产生表达所需的关系的数学函数统计数据与缺陷检测灵敏度的参数，数学用于确定缺陷检测灵敏度数据的缺陷检测灵敏度数据，用于获得关于缺陷检查期间半导体器件的期望表面区域中的缺陷的信息的缺陷检测灵敏度数据，以及定义缺陷检测灵敏度数据的存在范围的缺陷检测灵敏度数据图像数据中的缺陷信息，其从每个半导体器件的期望表面区域获取，并且在前一步骤中被算术处理。

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