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1. 发明申请

US20100212581A1 SILICON FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
标题翻译：硅胶膜形成装置及其使用方法
公开(公告)号：US20100212581A1
公开(公告)日：2010-08-26
申请号：US12707299
申请日：2010-02-17
申请人： Naotaka NORO , Takahiro Miyahara
发明人： Naotaka NORO , Takahiro Miyahara
IPC分类号： C30B25/02 , C30B25/20
CPC分类号： C30B25/02 , C23C16/0236 , C23C16/4404 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system.
摘要翻译：使用硅膜形成装置的方法包括执行用硅涂膜覆盖反应管的预涂工艺，蚀刻产物目标物体上的天然氧化物膜的蚀刻工艺，形成硅产物的硅膜形成工艺产品目标物体上的膜，以及依次对反应管上的硅膜进行蚀刻的清洗工艺。预涂工艺包括将硅源气体从处于工艺场下方的第一位置处具有最低开口的第一供应口供应到反应管中，同时从反应管内部向上排出气体。蚀刻工艺包括从处理区域和第一位置之间具有最低开口的第二供应端口向反应管供应蚀刻气体，同时通过排气系统从反应管内部向上排出气体。

2. 发明授权

US07727296B2 Collecting unit for semiconductor process 有权
标题翻译：半导体工艺采集单元
公开(公告)号：US07727296B2
公开(公告)日：2010-06-01
申请号：US11905990
申请日：2007-10-05
申请人： Yukio Tojo , Naotaka Noro , Yoshiyuki Fujita , Yuji Ito
发明人： Yukio Tojo , Naotaka Noro , Yoshiyuki Fujita , Yuji Ito
IPC分类号： B01D45/00
CPC分类号： B01D45/08 , B01D45/06 , Y10S55/15 , Y10S438/905
摘要： A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.
摘要翻译：收集单元设置在半导体处理装置的排气通道上以收集废气中所含的副产物。收集单元包括可拆卸地设置在壳体内并被构造成收集一部分副产物的捕集体。捕集体包括排列在废气的流动方向上的翅片，并且具有一部分副产物被沉积并被捕获的表面。收集单元还包括设置在壳体内部并被配置为接收从捕获体或套管的内表面剥离的一部分副产品的接收机构，以防止该部分沉积在壳体的底部。接收机构构造成允许其上保持的副产物的一部分与来自上下的清洁气体接触。

3. 发明申请

US20070093075A1 Method for using film formation apparatus 有权
标题翻译：使用成膜装置的方法
公开(公告)号：US20070093075A1
公开(公告)日：2007-04-26
申请号：US11543880
申请日：2006-10-06
申请人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
发明人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
IPC分类号： H01L21/31
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
摘要翻译：在使用半导体工艺的成膜装置的方法中，确定成膜工艺的工艺条件。工艺条件包括要在目标衬底上形成的薄膜的预设薄膜厚度。此外，根据处理条件来确定执行清洁处理的定时。定时由关于薄膜的累积膜厚度的阈值定义。累积膜厚度不超过成膜处理重复N次（N为正整数）的阈值，但超过成膜处理重复N + 1次的阈值。该方法包括连续执行第一至第N个处理，每个处理由成膜处理组成，并且在第N个处理之后以及在由成膜处理组成的第（N + 1）处理之前执行清洁处理。

4. 发明授权

US08808452B2 Silicon film formation apparatus and method for using same 有权
标题翻译：硅成膜装置及其使用方法
公开(公告)号：US08808452B2
公开(公告)日：2014-08-19
申请号：US12707299
申请日：2010-02-17
申请人： Naotaka Noro , Takahiro Miyahara
发明人： Naotaka Noro , Takahiro Miyahara
IPC分类号： C30B25/02 , C30B25/20 , C30B29/06 , C30B25/12 , C30B25/08
CPC分类号： C30B25/02 , C23C16/0236 , C23C16/4404 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658
摘要： A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system.
摘要翻译：使用硅膜形成装置的方法包括执行用硅涂膜覆盖反应管的预涂工艺，蚀刻产物目标物体上的天然氧化物膜的蚀刻工艺，形成硅产物的硅膜形成工艺产品目标物体上的膜，以及依次对反应管上的硅膜进行蚀刻的清洗工艺。预涂工艺包括将硅源气体从处于工艺场下方的第一位置处具有最低开口的第一供应口供应到反应管中，同时从反应管内部向上排出气体。蚀刻工艺包括从处理区域和第一位置之间具有最低开口的第二供应端口向反应管供应蚀刻气体，同时通过排气系统从反应管内部向上排出气体。

5. 发明申请

US20080104935A1 Collecting unit for semiconductor process 有权
标题翻译：半导体工艺采集单元
公开(公告)号：US20080104935A1
公开(公告)日：2008-05-08
申请号：US11905990
申请日：2007-10-05
申请人： Yukio Tojo , Naotaka Noro , Yoshiyuki Fujita , Yuji Ito
发明人： Yukio Tojo , Naotaka Noro , Yoshiyuki Fujita , Yuji Ito
IPC分类号： H01L21/00 , B01D46/00
CPC分类号： B01D45/08 , B01D45/06 , Y10S55/15 , Y10S438/905
摘要： A collecting unit is disposed on an exhaust passage of a semiconductor processing apparatus to collect by-products contained in an exhaust gas. The collecting unit includes a trap body detachably disposed inside a casing and configured to collect a part of the by-products. The trap body includes fins arrayed in a flow direction of the exhaust gas and having a surface on which a part of the by-products is deposited and trapped. The collecting unit further includes a receiving mechanism disposed inside the casing and configured to receive a part of the by-products that peels off from the trap body or an inner surface of the casing to prevent this part from being deposited on a bottom of the casing. The receiving mechanism is configured to allow a part of the by-products held thereon to be in contact with a cleaning gas from above and from below.
摘要翻译：收集单元设置在半导体处理装置的排气通道上以收集废气中所含的副产物。收集单元包括可拆卸地设置在壳体内并被构造成收集一部分副产物的捕集体。捕集体包括排列在废气的流动方向上的翅片，并且具有一部分副产物被沉积并被捕获的表面。收集单元还包括设置在壳体内部并被配置为接收从捕获体或套管的内表面剥离的一部分副产品的接收机构，以防止该部分沉积在壳体的底部。接收机构构造成允许其上保持的副产物的一部分与来自上下的清洁气体接触。

6. 发明授权

US07938080B2 Method for using film formation apparatus 有权
标题翻译：使用成膜装置的方法
公开(公告)号：US07938080B2
公开(公告)日：2011-05-10
申请号：US12330559
申请日：2008-12-09
申请人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
发明人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
IPC分类号： C23C16/00 , C23C16/52 , H01L21/306
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
摘要翻译：在使用半导体工艺的成膜装置的方法中，确定成膜工艺的工艺条件。工艺条件包括要在目标衬底上形成的薄膜的预设薄膜厚度。此外，根据处理条件来确定执行清洁处理的定时。定时由关于薄膜的累积膜厚度的阈值定义。累积膜厚度不超过成膜处理重复N次（N为正整数）的阈值，但超过成膜处理重复N + 1次的阈值。该方法包括连续执行第一至第N个处理，每个处理由成膜处理组成，并且在第N个处理之后以及在由成膜处理组成的第（N + 1）处理之前执行清洁处理。

7. 发明申请

US20090090300A1 METHOD FOR USING FILM FORMATION APPARATUS 有权
标题翻译：使用膜形成装置的方法
公开(公告)号：US20090090300A1
公开(公告)日：2009-04-09
申请号：US12330559
申请日：2008-12-09
申请人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
发明人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
IPC分类号： B05C11/00
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
摘要翻译：在使用半导体工艺的成膜装置的方法中，确定成膜工艺的工艺条件。工艺条件包括要在目标衬底上形成的薄膜的预设薄膜厚度。此外，根据处理条件来确定执行清洁处理的定时。定时由关于薄膜的累积膜厚度的阈值定义。累积膜厚度不超过成膜处理重复N次（N为正整数）的阈值，但超过成膜处理重复N + 1次的阈值。该方法包括连续执行第一至第N个处理，每个处理由成膜处理组成，并且在第N个处理之后以及在由成膜处理组成的第（N + 1）处理之前执行清洁处理。

8. 发明授权

US07494943B2 Method for using film formation apparatus 有权
标题翻译：使用成膜装置的方法
公开(公告)号：US07494943B2
公开(公告)日：2009-02-24
申请号：US11543880
申请日：2006-10-06
申请人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
发明人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
IPC分类号： H01L21/00
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
摘要翻译：在使用半导体工艺的成膜装置的方法中，确定成膜工艺的工艺条件。工艺条件包括要在目标衬底上形成的薄膜的预设薄膜厚度。此外，根据处理条件来确定执行清洁处理的定时。定时由关于薄膜的累积膜厚度的阈值定义。累积膜厚度不超过成膜处理重复N次（N为正整数）的阈值，但超过成膜处理重复N + 1次的阈值。该方法包括连续执行第一至第N个处理，每个处理由成膜处理组成，并且在第N个处理之后以及在由成膜处理组成的第（N + 1）处理之前执行清洁处理。

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