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    • 4. 发明申请
    • VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING METHOD OF SEMICONDUCTOR PROCESSING SUBSTRATE
    • 真空加工系统和半导体加工基板的真空加工方法
    • US20110110752A1
    • 2011-05-12
    • US12883602
    • 2010-09-16
    • Susumu TAUCHIHideaki KondoTeruo NakataKeita NogiAtsushi ShimodaTakafumi Chida
    • Susumu TAUCHIHideaki KondoTeruo NakataKeita NogiAtsushi ShimodaTakafumi Chida
    • H01L21/677
    • H01L21/67184H01L21/67196H01L21/67766H01L21/67778
    • The invention provides a vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same, comprising an atmospheric transfer chamber having a plurality of cassette stands, a lock chamber arranged on a rear side of the atmospheric transfer chamber, and a first vacuum transfer chamber connected to a rear side of the lock chamber, wherein the first vacuum transfer chamber does not have any vacuum processing chamber connected thereto and has transfer intermediate chambers connected thereto, and the transfer intermediate chambers have subsequent vacuum transfer chambers connected thereto, and wherein the wafers are transferred via the lock chamber to the first vacuum transfer chamber to be processed in each of the subsequent vacuum processing chambers, which are further transferred via any of the transfer intermediate chambers connected to the first vacuum transfer chamber to the subsequent vacuum transfer chambers, and the respective wafers transferred to the subsequent vacuum transfer chambers other than the first vacuum transfer chamber are transferred to the respective vacuum processing chambers connected to each of the vacuum processing chambers and processed therein.
    • 本发明提供了一种半导体处理基板的真空处理系统和使用该真空处理方法的真空处理方法,包括具有多个盒架的大气传送室,布置在大气传送室后侧的锁定室,以及第一 真空传送室连接到锁定室的后侧,其中第一真空传送室不具有连接到其上的任何真空处理室,并且具有连接到其上的传送中间室,并且传送中间室具有连接到其上的随后的真空传送室, 其中所述晶片经由所述锁定室传送到所述第一真空传送室,以在随后的每个真空处理室中被处理,所述真空处理室进一步通过连接到所述第一真空传送室的任何转移中间室转移到随后的真空转印 室和相应的晶片tr 推送到除了第一真空转移室之后的后续真空转移室被转移到连接到每个真空处理室的各个真空处理室中并在其中处理。
    • 8. 发明申请
    • VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING METHOD OF SEMICONDUCTOR PROCESSING SUBSTRATE
    • 真空加工系统和半导体加工基板的真空加工方法
    • US20110110751A1
    • 2011-05-12
    • US12871333
    • 2010-08-30
    • Susumu TAUCHIHideaki KondoTeruo NakataKeita NogiAtsushi ShimodaTakafumi Chida
    • Susumu TAUCHIHideaki KondoTeruo NakataKeita NogiAtsushi ShimodaTakafumi Chida
    • H01L21/677
    • H01L21/67184H01L21/67196H01L21/67201H01L21/67745H01L21/67769Y10S414/139
    • A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one.
    • 半导体处理基板的真空处理系统和使用其的真空处理方法包括具有多个用于传送晶片的盒架的大气传送室,用于存储从大气传送室转移的晶片的锁定室,第一真空 传送室,来自锁定室的晶片被转印到该传送室,连接到第一真空传送室的传送中间室,连接到传送中间室的第二真空传送室,连接到第一真空传送室的至少一个真空处理室 以及连接到第二真空传送室的后侧的两个或更多个真空处理室,其中连接到第一真空传送室的真空处理室的数量小于连接到第二真空传送室的真空处理室的数量 ,或使用真空加工台数 连接到第一真空传送室的器件被限制为一个。