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1. 发明授权

US08604506B2 Surface mounting type light emitting diode and method for manufacturing the same 有权
标题翻译：表面安装型发光二极管及其制造方法
公开(公告)号：US08604506B2
公开(公告)日：2013-12-10
申请号：US12035216
申请日：2008-02-21
申请人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
发明人： Masahiro Konishi , Toshio Hata , Taiji Morimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/644 , H01L33/486 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2224/8592 , H01L2924/00014
摘要： This invention provides a surface mounting type light emitting diode excellent in heat radiation performance, reliability and productivity. The surface mounting type light emitting diode includes a metallic base member, a semiconductor light emitting element having a bottom face fixedly bonded to a top face of the base member, and a metallic reflector joined to the top face of the base member with a heat conduction type adhesive sheet interposed therebetween, to surround the semiconductor light emitting element. Heat generated from the semiconductor light emitting element is transferred to the reflector via the base member and the heat conduction type adhesive sheet, and then is radiated to the outside. The metallic reflector can efficiently radiate the heat to the outside. The cutting margin provided for the reflector facilitates a dicing process, which improves productivity.
摘要翻译：本发明提供了散热性能，可靠性和生产率优异的表面安装型发光二极管。表面安装型发光二极管包括金属基底构件，具有固定地接合到基底构件的顶面的底面的半导体发光元件和与基底构件的顶面接合的金属反射体，其具有热传导以夹持半导体发光元件。从半导体发光元件产生的热量经由基底部件和导热型粘合片传递到反射体，然后被照射到外部。金属反射器可以有效地将热量辐射到外部。为反射器提供的切割边缘有助于切割过程，从而提高生产率。

2. 发明授权

US07938636B2 Injection apparatus, semiconductor light emitting apparatus, manufacturing apparatus, and manufacturing method of semiconductor light emitting apparatus 有权
标题翻译：注射装置，半导体发光装置，制造装置和半导体发光装置的制造方法
公开(公告)号：US07938636B2
公开(公告)日：2011-05-10
申请号：US11882598
申请日：2007-08-02
申请人： Toshio Hata , Hideaki Tatsuta , Hiromu Tagashira , Taiji Morimoto
发明人： Toshio Hata , Hideaki Tatsuta , Hiromu Tagashira , Taiji Morimoto
IPC分类号： B29C41/36 , B29C41/52 , B41F15/44
CPC分类号： B29C45/02 , B29C45/14655 , B29K2995/0018 , B41F15/12 , B41F15/40 , H01L33/20 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2933/0041 , H01L2924/00 , H01L2924/00014
摘要： A fluorescence-containing material injection apparatus of the present invention includes a fluorescence-containing material temperature control section, a fluorescence-containing material stirring section, a fluorescence-containing material remaining amount sensor, and a fluorescence-containing material injection amount adjustment section, by which disproportion in the mixture ratio of contaminates in a fluorescence-containing material M is restrained. This makes it possible to evenly apply a fluorescence-containing material onto a semiconductor light emitting element.
摘要翻译：本发明的含荧光材料注入装置包括含荧光的材料温度控制部分，含荧光材料搅拌部分，含荧光物质剩余量传感器和含荧光物质注入量调节部分，由抑制含荧光材料M中污染物的混合比例的不均衡。这使得可以将含荧光的材料均匀地施加到半导体发光元件上。

3. 发明申请

US20080308226A1 Two-Component Curable Solventless Adhesive 有权
标题翻译：双组份固化无溶剂粘合剂
公开(公告)号：US20080308226A1
公开(公告)日：2008-12-18
申请号：US11658403
申请日：2005-02-04
申请人： Akihiro Imai , Kazuaki Imamura , Taiji Morimoto , Hiroshi Kawasaki , Mikio Matsufuji
发明人： Akihiro Imai , Kazuaki Imamura , Taiji Morimoto , Hiroshi Kawasaki , Mikio Matsufuji
IPC分类号： B32B7/12 , C08F283/00
CPC分类号： C09J175/04 , C08G18/10
摘要： To provide a two-component curable solventless adhesive which enables a laminated composite film comprising a barrier layer and a plastic film laminated with each other to maintain excellent appearance and adhesive strength for a long period even after a sterilization treatment at high temperature, and to appropriately adjust a reaction between a base resin and a curing agent during a production of the laminated composite film, thereby to ensure excellent workability, the two-component curable solventless adhesive comprises a base resin and a curing agent, wherein the base resin contains a polyol having an acid group and a secondary or tertiary terminal hydroxyl group accounting for 30% or more of the entire terminal hydroxyl groups of the polyol, and the curing agent contains an isocyanate group-terminated urethane prepolymer containing at least an aralkyl polyisocyanate and/or a modified substance thereof as a raw polyisocyanate, and a content of a low molecular weight polyisocyanate having a molecular weight of 190 or less is 3% by weight or less.
摘要翻译：为了提供一种双组分固化的无溶剂粘合剂，即使在高温灭菌处理后，即使在高温灭菌处理后，也能够使包含阻隔层和塑料膜的层叠复合膜长时间保持良好的外观和粘合强度，并且适当地在层合复合膜的制造过程中调整基础树脂和固化剂之间的反应，从而确保优异的可加工性，双组分固化无溶剂粘合剂包括基础树脂和固化剂，其中基础树脂含有多元醇多元醇的全部末端羟基的酸基和二级或三级末端羟基占30％以上，固化剂含有至少含有芳烷基多异氰酸酯和/或改性的异氰酸酯基封端的氨基甲酸酯预聚物作为原料多异氰酸酯的物质，以及低分子量多异氰酸酯的含量分子量为190以下的比例为3重量％以下。

4. 发明申请

US20080231169A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20080231169A1
公开(公告)日：2008-09-25
申请号：US12051602
申请日：2008-03-19
申请人： Toshio HATA , Masahiro Konishi , Makoto Agatani , Taiji Morimoto
发明人： Toshio HATA , Masahiro Konishi , Makoto Agatani , Taiji Morimoto
IPC分类号： H01J1/62
CPC分类号： H01B1/10 , F21K9/232 , F21Y2115/10 , H01L24/45 , H01L24/73 , H01L25/0753 , H01L33/50 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01015 , H01L2924/0102 , H01L2924/01047 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： By using a light emitting device including a substrate and a light emitting unit, the light emitting unit including: a plurality of light emitting elements that are mounted on substrate and electrically connected to external electrodes; a first sealing member layer containing a first fluorescent material, formed to cover light emitting elements; and a second sealing member layer containing a second fluorescent material, formed on first sealing member layer, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device capable of suppressing color shifts and the like by the fluorescent materials, and of being easily manufactured, as well as a method for manufacturing the same.
摘要翻译：通过使用包括基板和发光单元的发光装置，所述发光单元包括：多个发光元件，其安装在基板上并电连接到外部电极; 包含形成为覆盖发光元件的第一荧光材料的第一密封元件层; 以及形成在第一密封部件层上的包含第二荧光材料的第二密封部件层及其制造方法，能够提供能够抑制荧光材料的色移等的发光元件，并且易于制造，以及其制造方法。

5. 发明授权

US06538095B2 Solvent-free two-component curable adhesive composition 失效
公开(公告)号：US06538095B2
公开(公告)日：2003-03-25
申请号：US10108709
申请日：2002-03-29
申请人： Akihiro Imai , Taiji Morimoto , Sachio Igarashi
发明人： Akihiro Imai , Taiji Morimoto , Sachio Igarashi
IPC分类号： C08G1840
CPC分类号： B32B7/12 , B32B15/08 , C08G18/4216 , C09J175/06 , Y10S528/905
摘要： The solvent-free two-component adhesive composition of the present invention comprises a polyol component (A) and a polyisocyanate component (B), and the viscosity of the mixture at 80° C. immediately after the point of time the components (A) and (B) are mixed together is 900 mPa·s or higher. The component (A) may be a polyol having a number average molecular weight of 800 or larger, or a mixture thereof, and the viscosity of the component (B) at 25° C. may be 20,000 mPa·s or higher. The composition may be used for laminating metal foil of 5 to 15 m thickness with a plastic film. By using the composition of the present invention, the occurrence of blocking due to the seepage of the adhesive from metal foil is prevented. The present invention includes a process of lamination using the same.

6. 发明授权

US6097040A Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad 失效
标题翻译：半导体发光装置，其防止电流在电极引线接合焊盘的正下方部分流动
公开(公告)号：US6097040A
公开(公告)日：2000-08-01
申请号：US115756
申请日：1998-07-15
申请人： Taiji Morimoto , Shigetoshi Ito
发明人： Taiji Morimoto , Shigetoshi Ito
IPC分类号： H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/62 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： A semiconductor light emitting device includes an insulating substrate; and a layered structure formed on the insulating substrate, the layered structure including at least a light emitting section, a positive electrode section, and a negative electrode section. A portion of the positive electrode section and a portion of the negative electrode section overlap each other via an insulating film.
摘要翻译：半导体发光器件包括绝缘衬底; 以及形成在所述绝缘基板上的分层结构，所述层叠结构至少包括发光部，正极部和负极部。正极部分的一部分和负极部分的一部分经由绝缘膜彼此重叠。

7. 发明授权

US6009113A Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same 失效
标题翻译：具有分别掺杂有Mg的包层和接触层的半导体激光器件及其制造方法
公开(公告)号：US6009113A
公开(公告)日：1999-12-28
申请号：US210564
申请日：1998-12-15
申请人： Taiji Morimoto , Zenkichi Shibata , Takashi Ishizumi , Keisuke Miyazaki , Toshio Hata , Yoshinori Ohitsu
发明人： Taiji Morimoto , Zenkichi Shibata , Takashi Ishizumi , Keisuke Miyazaki , Toshio Hata , Yoshinori Ohitsu
IPC分类号： H01L33/30 , H01S5/042 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01L33/305 , H01S5/0421 , H01S5/305 , H01S2304/06 , H01S5/2231 , H01S5/3054 , H01S5/3211 , H01S5/3213 , H01S5/32316
摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.
摘要翻译：提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层，存在于接触层中的电阻部分和载流子浓度低。用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。

8. 发明授权

US5206185A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5206185A
公开(公告)日：1993-04-27
申请号：US707449
申请日：1991-05-30
申请人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
发明人： Hiroyuki Hosoba , Mitsuhiro Matsumoto , Sadayoshi Matsui , Taiji Morimoto
IPC分类号： H01S5/10 , H01S5/16 , H01S5/223 , H01S5/24
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
摘要翻译：公开了一种半导体激光器件，其包括具有脊部的半导体衬底，脊部的宽度在小面附近比在器件内部更小; 形成在包括所述脊部的所述基板上的电流阻挡层; 通过所述电流阻挡层形成在所述脊部的中心的至少一个条纹槽; 以及设置在电流阻挡层上的多层结构，所述多层结构依次具有第一电流阻挡层，激光振荡用有源层和第二电流阻挡层; 其中至少两个侧槽在脊部的中心区域的两侧以与其附近的区域宽度相同的宽度对称地形成。另外，公开了半导体激光装置的制造方法。

9. 发明授权

US5042044A Semiconductor laser device, a semiconductor wafer 失效
标题翻译：半导体激光器件，半导体晶片
公开(公告)号：US5042044A
公开(公告)日：1991-08-20
申请号：US513508
申请日：1990-04-27
申请人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
发明人： Masaki Kondo , Kazuaki Sasaki , Taiji Morimoto , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Sadayoshi Matsui , Saburo Yamamoto , Takahiro Suyama , Masafumi Kondo
IPC分类号： H01S5/24 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/24 , H01S5/3202 , H01S5/32325 , H01S5/32391
摘要： A semiconductor laser device and a method for the production of the semiconductor laser device are provided, which semiconductor laser device includes a striped channel formed in a semiconductor substrate through a current blocking layer on the substrate and at least two dummy grooves formed in the current blocking layer on each side of the striped channel. Also provided are a semiconductor wafer prepared for the purpose of producing optical devices with an optical waveguide, and a method for the production of the semiconductor wafer. The semiconductor wafer includes a semiconductor substrate, the surface of which has an orientation inclined from the [100] direction to one of the [011] and [011] directions of an angle .theta. satisfying the relationship 0.1.degree.

10. 发明授权

US4926431A Semiconductor laser device which is stable for a long period of time 失效
标题翻译：半导体激光器件长期稳定
公开(公告)号：US4926431A
公开(公告)日：1990-05-15
申请号：US415417
申请日：1989-09-29
申请人： Hidenori Kawanishi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa , Masahiro Yamaguchi
发明人： Hidenori Kawanishi , Hiroshi Hayashi , Taiji Morimoto , Shinji Kaneiwa , Masahiro Yamaguchi
IPC分类号： H01S5/16 , H01S5/20 , H01S5/223 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/16 , H01S5/20 , H01S5/34 , H01S5/2231 , H01S5/2232
摘要： A semiconductor laser device comprises a substrate and a multi-layered crystal structure with an active layer for laser-oscillating operation, the multi-layered crystal structure being disposed on the substrate and having a striped channel area through which current is supplied to the active layer and a light-absorbing area positioned outside of the channeled area by which a difference between the amount of light to be absorbed inside of the channeled area and the amount of light to be absorbed outside of the channeled area is created, which causes a difference in the effective refractive index of the active layer, resulting in an optical waveguide in the active layer, wherein the active layer is flat and uniform and the width of the portion of the channel area in the vicinity of at least one facet is wider than that of the remaining portion of the channel area.

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