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    • 2. 发明授权
    • Method for manufacturing magneto-resistive random access memory
    • 制造磁阻随机存取存储器的方法
    • US07220599B2
    • 2007-05-22
    • US10950584
    • 2004-09-28
    • Wan-jun ParkTaek-dong LeeByeong-kook ParkTae-wan KimI-hun SongSang-jin Park
    • Wan-jun ParkTaek-dong LeeByeong-kook ParkTae-wan KimI-hun SongSang-jin Park
    • H01L21/00H01L29/76
    • H01L27/228B82Y10/00
    • A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.
    • 磁阻随机存取存储器包括MOS晶体管,其具有第一栅极和衬底上的源极和漏极结,连接到源极结的下部电极,下部电极上的第一磁性层,包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上,与第一磁性层相对的介电阻挡层上的第二磁性层,第二磁性层上的上部电极,位于第一磁性层之间的第二栅极 栅极和下部电极,以控制第一和第二磁性层之一的磁性数据,以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。
    • 4. 发明授权
    • Underlayer for use in a high density magnetic recording media
    • 用于高密度磁记录介质的底层
    • US06228515B1
    • 2001-05-08
    • US09175475
    • 1998-10-20
    • Kyung-Ho ShinTaek-Dong LeeSoo-Youl Hong
    • Kyung-Ho ShinTaek-Dong LeeSoo-Youl Hong
    • G11B564
    • G11B5/732G11B5/7325
    • The present invention relates to an underlayer for use in a high density magnetic recording media. More particularly, the invention relates to an underlayer for use in a high density magnetic recording media comprising A1Pd or CoTi intermetallic compound having B2 crystal structure, or Co50Ti50-xMxmetal alloy in which Ti in CoTi intermetallic compound is partly substituted by other substitutional elements while maintaining its B2 crystal structure, or CoTi/Cr of a double thin film structure in which a Cr seed layer is introduced. The underlayer provided by the present invention has a crystal structure and microstructure suitable for a high density magnetic recording media, which makes a good texture structure with a Co-based magnetic layer deposited thereon and shows fine grain size distribution, high coercity and high coercity squareness.
    • 本发明涉及一种用于高密度磁记录介质的底层。 更具体地说,本发明涉及一种用于包含具有B2晶体结构的AlPd或CoTi金属间化合物的高密度磁记录介质的底层,或CoTiTi-xM x金属合金,其中CoTi金属间化合物中的Ti部分地被其它取代元素取代,同时保持 其B2晶体结构,或其中引入Cr种子层的双重薄膜结构的CoTi / Cr。由本发明提供的底层具有适合于高密度磁记录介质的晶体结构和微结构,这使得良好 纹理结构,其上沉积有Co基磁性层,并显示出细小的粒度分布,高强度和高强度矩形度。