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1. 发明申请

US20170110509A1 MTJ STRUCTURES AND MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES INCLUDING THE SAME 审中-公开
公开(公告)号：US20170110509A1
公开(公告)日：2017-04-20
申请号：US15293771
申请日：2016-10-14
申请人： Jung-Hoon BAK , Woo-Jin KIM , Mina LEE , Gwan-Hyeob KOH , Yoon-Jong SONG
发明人： Jung-Hoon BAK , Woo-Jin KIM , Mina LEE , Gwan-Hyeob KOH , Yoon-Jong SONG
IPC分类号： H01L27/22 , H01L43/10 , G11C11/16 , H01L43/02 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic tunnel junction (MTJ) structure includes a fixed layer pattern structure having a perpendicular magnetization direction, a tunnel barrier pattern on the fixed layer pattern structure, a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction, a first surface magnetism induction pattern on the free layer pattern, the first surface magnetism induction pattern inducing a perpendicular magnetism in a surface of the free layer pattern, a conductive pattern on the first surface magnetism induction pattern, and a ferromagnetic pattern on the conductive pattern.

2. 发明授权

US09352005B2 Isolated-probiotics preparation containing Bacillus sp. strain 有权
标题翻译：含有芽孢杆菌的分离益生菌制剂应变
公开(公告)号：US09352005B2
公开(公告)日：2016-05-31
申请号：US13885832
申请日：2011-09-08
申请人： Young Ok Kim , Kyung Kil Kim , Bo Hye Nam , Sang Jun Lee , Dong Gyun Kim , Hyon Sob Han , Si Yong Yang , Hee Jeong Kong , Woo Jin Kim , Bong Seok Kim
发明人： Young Ok Kim , Kyung Kil Kim , Bo Hye Nam , Sang Jun Lee , Dong Gyun Kim , Hyon Sob Han , Si Yong Yang , Hee Jeong Kong , Woo Jin Kim , Bong Seok Kim
IPC分类号： A23K1/00 , A23K1/18 , C12R1/07 , A61K35/742
CPC分类号： A61K35/742 , A23K10/18 , A23K50/80 , C12R1/07
摘要： The present invention relates to an isolated Bacillus sp. strain having probiotic activity. More particularly, the present invention relates to an isolated Bacillus sp. 2-4 (KCCM11107P) strain having probiotic activity. Since the strain of the present invention functions as probiotics by having an antibacterial activity against various fish pathogenic bacteria, as well as secreting helpful enzymes such as protease, amylase, cellulose, and lipase to help the digestion and absorption of the feed, the strain of the present invention can be helpfully used as a feed additive for fish and crustaceans.
摘要翻译：本发明涉及一种分离的芽孢杆菌属菌株具有益生菌活性。更具体地说，本发明涉及一种分离的芽孢杆菌属 2-4（KCCM11107P）菌株具有益生菌活性。由于本发明的菌株通过对各种鱼病原菌具有抗菌活性，以及分泌有用的酶如蛋白酶，淀粉酶，纤维素和脂肪酶来帮助消化和吸收饲料，起到益生菌的作用，因此，本发明可有效地用作鱼和甲壳动物的饲料添加剂。

3. 发明申请

US20150287911A1 METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE 有权
标题翻译：制造磁阻随机访问存储器件的方法
公开(公告)号：US20150287911A1
公开(公告)日：2015-10-08
申请号：US14611717
申请日：2015-02-02
申请人： Kyoung-Sun KIM , Woo-Jin KIM , Ken TOKASHIKI
发明人： Kyoung-Sun KIM , Woo-Jin KIM , Ken TOKASHIKI
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： In a method of manufacturing a MRAM device, a lower electrode is formed on a substrate. A first magnetic layer, a tunnel barrier layer, and a second magnetic layer are sequentially formed on the lower electrode layer. An etching mask is formed on the second magnetic layer. An ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate is performed to form a MTJ structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, the MTJ structure has no by-products remaining after the ion beam etching process is performed.
摘要翻译：在制造MRAM器件的方法中，在基片上形成下电极。第一磁性层，隧道势垒层和第二磁性层依次形成在下部电极层上。在第二磁性层上形成蚀刻掩模。执行其中第一离子束和第二离子束同时发射到衬底上的离子束蚀刻工艺，以形成包括第一磁性层图案，隧道层图案和第二磁性层图案的MTJ结构磁性层，隧道势垒层和第二磁性层，在执行离子束蚀刻处理之后，MTJ结构没有剩余副产物。

4. 发明授权

US09065039B2 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same 有权
公开(公告)号：US09065039B2
公开(公告)日：2015-06-23
申请号：US14579803
申请日：2014-12-22
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/00 , H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

5. 发明申请

US20140264680A1 Non-Volatile Memory Devices and Methods of Fabricating the Same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20140264680A1
公开(公告)日：2014-09-18
申请号：US14195891
申请日：2014-03-04
申请人： Whan-Kyun Kim , Young-Hyun Kim , Woo-Jin Kim
发明人： Whan-Kyun Kim , Young-Hyun Kim , Woo-Jin Kim
IPC分类号： H01L27/22 , H01L43/02
CPC分类号： H01L27/222 , H01L27/228 , H01L43/08
摘要： A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.
摘要翻译：提供非易失性存储器件。非易失性存储器件包括形成在衬底中的多个杂质区，与至少一个杂质区电连接的第一触点，与至少一个杂质区电连接的第二触点，形成在第一信息存储部与基板电连接并与第一触点电连接的第一高度，以及形成在与第一高度不同的第二高度处的与第二触点电连接的第二信息存储部。

6. 发明申请

US20130302299A1 NOVEL PROBIOTIC BACILLUS SP. STRAIN 有权
标题翻译：新颖的PROBIOTIC BACILLUS SP。应变
公开(公告)号：US20130302299A1
公开(公告)日：2013-11-14
申请号：US13885832
申请日：2011-09-08
申请人： Young Ok Kim , Kyung Kil Kim , Bo Hye Nam , Sang Jun Lee , Dong Gyun Kim , Hyon Sob Han , Si Yong Yang , Hee Jeong Kong , Woo Jin Kim , Bong Seok Kim
发明人： Young Ok Kim , Kyung Kil Kim , Bo Hye Nam , Sang Jun Lee , Dong Gyun Kim , Hyon Sob Han , Si Yong Yang , Hee Jeong Kong , Woo Jin Kim , Bong Seok Kim
IPC分类号： A61K35/74 , C12R1/07
CPC分类号： A61K35/742 , A23K10/18 , A23K50/80 , C12R1/07
摘要： The present invention relates to a novel Bacillus sp. strain having probiotic activity. More particularly, the present disclosure relates to a novel Bacillus sp. 2-4 (KCCM11107P) strain having probiotic activity. Since the strain of the present disclosure functions as probiotics by having an antibacterial activity against various fish pathogenic bacteria, as well as secreting helpful enzymes such as protease, amylase, cellulose, and lipase to help the digestion and absorption of the feed, the strain of the present disclosure can be helpfully used as a feed additive for fish and crustaceans.
摘要翻译：本发明涉及一种新型芽孢杆菌属菌株具有益生菌活性。更具体地，本公开涉及一种新型芽孢杆菌属 2-4（KCCM11107P）菌株具有益生菌活性。由于本公开的菌株通过对各种鱼病原菌具有抗菌活性，以及分泌有用的酶如蛋白酶，淀粉酶，纤维素和脂肪酶来帮助消化和吸收饲料，起到益生菌作用，因此，本公开可以有助于用作鱼和甲壳类动物的饲料添加剂。

7. 发明申请

US20130272629A1 VACUUM PACKING ENVELOPE FOR COOKING 审中-公开
标题翻译：真空包装包装烹饪
公开(公告)号：US20130272629A1
公开(公告)日：2013-10-17
申请号：US13460298
申请日：2012-04-30
申请人： Woo Jin Kim , Young Seon Kim
发明人： Woo Jin Kim , Young Seon Kim
IPC分类号： B65D33/01
CPC分类号： B65D81/3461 , B65D2205/00
摘要： The vacuum packing envelope for cooking which is characterized in that a sealing part (110) having a certain width is formed for vacuum packing food by heating and thermally melting a film, and a vapor discharge part (130) which is disposed at a portion of the sealing rim part (110) for automatically discharging vapor with the aid of an inner pressure when heating and cooking food, comprises an easy peel tape (120) which crosses, in a horizontal direction, the sealing rim part; and a vapor discharge part (130) which is formed in the sealing weak part (111) where the easy peel tape (120) and the sealing rim part (110) overlap with each other.
摘要翻译：一种用于烹饪的真空包装容器，其特征在于，通过加热和热熔化膜形成具有一定宽度的密封部分（110），用于真空包装食品;以及蒸汽排出部分（130），其设置在用于在加热和烹调食物时借助于内部压力自动排出蒸汽的密封边缘部分（110）包括在水平方向上与密封边缘部分交叉的易剥离带（120）; 以及形成在易剥离带（120）和密封边缘部（110）彼此重叠的密封弱部（111）中的蒸汽排出部（130）。

8. 发明授权

US08334148B2 Methods of forming pattern structures 有权
标题翻译：形成图案结构的方法
公开(公告)号：US08334148B2
公开(公告)日：2012-12-18
申请号：US13184127
申请日：2011-07-15
申请人： Jun-Ho Jeong , Jang-Eun Lee , Woo-Jin Kim , Hee-Ju Shin , Yong-Hwan Ryu
发明人： Jun-Ho Jeong , Jang-Eun Lee , Woo-Jin Kim , Hee-Ju Shin , Yong-Hwan Ryu
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.
摘要翻译：示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。氧气用于在蚀刻过程中抑制硬掩模的去除。

9. 发明申请

US20110189851A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110189851A1
公开(公告)日：2011-08-04
申请号：US13016228
申请日：2011-01-28
申请人： Jun-Ho JEONG , Jang-Eun Lee , Se-Chung Oh , Suk-Hun Choi , Jea-Hyoung Lee , Woo-Jin Kim , Woo-Chang Lim
发明人： Jun-Ho JEONG , Jang-Eun Lee , Se-Chung Oh , Suk-Hun Choi , Jea-Hyoung Lee , Woo-Jin Kim , Woo-Chang Lim
IPC分类号： H01L21/28
CPC分类号： H01L21/28
摘要： A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.
摘要翻译：一种制造半导体器件的方法，所述方法包括提供衬底; 在衬底上形成下层; 在下层上形成牺牲层; 通过图案化所述牺牲层在所述牺牲层中形成开口，使得所述开口暴露所述下层的预定区域; 在开口中形成掩模层; 通过部分或完全氧化掩模层形成氧化物掩模; 去除牺牲层; 并使用氧化物掩模作为蚀刻掩模蚀刻下层，以形成下层图案。

10. 发明授权

US07498628B2 Capacitor for a semiconductor device and manufacturing method thereof 失效
标题翻译：一种用于半导体器件的电容器及其制造方法
公开(公告)号：US07498628B2
公开(公告)日：2009-03-03
申请号：US11212466
申请日：2005-08-25
申请人： Pyeong Won Oh , Woo Jin Kim , Hoon Jung Oh , Hyo Gun Yoon , Hyo Seob Yoon , Baik Il Choi
发明人： Pyeong Won Oh , Woo Jin Kim , Hoon Jung Oh , Hyo Gun Yoon , Hyo Seob Yoon , Baik Il Choi
IPC分类号： H01L21/00
CPC分类号： H01L28/56 , H01L21/02178 , H01L21/02192 , H01L21/022 , H01L21/02274 , H01L21/0234 , H01L21/31604 , H01L21/31616 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
摘要翻译：公开了一种用于半导体器件的电容器，包括：在半导体衬底上形成在预定下部结构上的下电极; 形成在下电极上并具有低漏电流特性的氧氮化铝膜; 形成在氮氧化铝膜上并具有比氮氧化铝膜更高的介电常数的氧化钇膜; 和形成在氧氮化钇膜上的上电极及其制造方法。

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