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1. 发明授权

US10141084B2 Electronic device 有权
公开(公告)号：US10141084B2
公开(公告)日：2018-11-27
申请号：US13834349
申请日：2013-03-15
申请人： Kyoung Soo Park , Woo Suk Lee , Woo Jun Lim , Kyung Jin Lee , Bong Yong Kim , Jin Seong Park , Dong Seon Uh , Youn Jo Ko , Jang Hyun Cho , Sang Sik Bae , Jin Kyu Kim
发明人： Kyoung Soo Park , Woo Suk Lee , Woo Jun Lim , Kyung Jin Lee , Bong Yong Kim , Jin Seong Park , Dong Seon Uh , Youn Jo Ko , Jang Hyun Cho , Sang Sik Bae , Jin Kyu Kim
IPC分类号： H01L23/52 , H01B3/08 , H01B7/00 , H01B13/00 , H01L23/00 , C09J133/06 , C09J7/10 , C08K3/08
摘要： An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.

2. 外观设计

USD701189S1 Mobile communication terminal 有权
公开(公告)号：USD701189S1
公开(公告)日：2014-03-18
申请号：US29419823
申请日：2012-05-02
申请人： Kyung-Jin Lee
设计人： Kyung-Jin Lee

3. 外观设计

USD691576S1 Mobile communication terminal 有权
公开(公告)号：USD691576S1
公开(公告)日：2013-10-15
申请号：US29419824
申请日：2012-05-02
申请人： Kyung-Jin Lee
设计人： Kyung-Jin Lee

4. 发明申请

US20130213691A1 ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20130213691A1
公开(公告)日：2013-08-22
申请号：US13834349
申请日：2013-03-15
申请人： Kyoung Soo PARK , Woo Suk LEE , Woo Jun LIM , Kyung Jin LEE , Bong Yong KIM , Jin Seong PARK , Dong Seon UH , Youn Jo KO , Jang Hyun CHO , Sang Sik BAE , Jin Kyu KIM
发明人： Kyoung Soo PARK , Woo Suk LEE , Woo Jun LIM , Kyung Jin LEE , Bong Yong KIM , Jin Seong PARK , Dong Seon UH , Youn Jo KO , Jang Hyun CHO , Sang Sik BAE , Jin Kyu KIM
IPC分类号： H01B3/08 , H01B13/00 , H01B7/00
CPC分类号： H01B3/082 , C08K3/08 , C09J7/10 , C09J133/068 , C09J2201/36 , C09J2201/602 , C09J2201/606 , C09J2203/326 , C09J2205/102 , H01B7/00 , H01B13/00 , H01L24/26 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/13099 , H01L2224/2711 , H01L2224/27436 , H01L2224/29083 , H01L2224/2919 , H01L2224/2929 , H01L2224/29316 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/2939 , H01L2224/294 , H01L2224/29499 , H01L2224/32225 , H01L2224/83191 , H01L2224/83851 , H01L2224/83862 , H01L2924/07802 , H01L2924/12044 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： An anisotropic conductive film, the anisotropic conductive film including an insulating layer and a conductive layer laminated on the insulating layer, the conductive layer containing conductive particles, wherein after glass substrates are positioned to face each other on the upper and lower surface of the anisotropic conductive film and are pressed against the anisotropic conductive film at 3 MPa (based on the sample area) and 160° C. (based on the detection temperature of the anisotropic conductive film) for 5 sec, a ratio of the area of the insulating layer to that of the conductive layer is from about 1.3:1 to about 3.0:1.
摘要翻译：各向异性导电膜，各向异性导电膜包括层叠在绝缘层上的绝缘层和导电层，导电层含有导电颗粒，其中玻璃基板在各向异性导电层的上表面和下表面上彼此面对并以3MPa（基于样品面积）和160℃（基于各向异性导电膜的检测温度）5秒压制各向异性导电膜，将绝缘层的面积与导电层的厚度为约1.3:1至约3.0:1。

5. 外观设计

USD686179S1 Mobile phone 有权
公开(公告)号：USD686179S1
公开(公告)日：2013-07-16
申请号：US29422920
申请日：2012-05-25
申请人： Kyung-Jin Lee
设计人： Kyung-Jin Lee

6. 外观设计

USD686177S1 Mobile communication terminal 有权
公开(公告)号：USD686177S1
公开(公告)日：2013-07-16
申请号：US29422803
申请日：2012-05-24
申请人： Kyung-Jin Lee
设计人： Kyung-Jin Lee

7. 外观设计

USD681596S1 Mobile communication terminal 有权
公开(公告)号：USD681596S1
公开(公告)日：2013-05-07
申请号：US29419816
申请日：2012-05-02
申请人： Kyung-Jin Lee
设计人： Kyung-Jin Lee

8. 发明授权

US08426935B2 Electronic device, memory device, and method of fabricating the same 有权
标题翻译：电子装置，存储装置及其制造方法
公开(公告)号：US08426935B2
公开(公告)日：2013-04-23
申请号：US12700464
申请日：2010-02-04
申请人： Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
发明人： Gyu Tae Kim , Kang Ho Lee , Hye Young Kim , Kyung Jin Lee , Woun Kang
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L27/222 , H01L43/12
摘要： Provided are an electronic device, a memory device, and a method of fabricating the devices for preventing physical distortion of functional elements from generating and improving electric contact properties between the functional elements and electric elements connecting to the functional elements. At least two grooves are formed in a substrate, and a conductive material is filled in the grooves to obtain electric elements having a surface at the same height as that of the substrate. In addition, a functional material layer (functional layer) is formed on an entire upper surface of the substrate and is patterned so as to obtain a functional element having both bottom surfaces contacting the electric elements.
摘要翻译：提供一种电子设备，存储器件和制造用于防止功能元件的物理失真的器件的产生和改善功能元件与连接到功能元件的电气元件之间的电接触性能的方法。在衬底中形成至少两个沟槽，并且在沟槽中填充导电材料以获得具有与衬底相同高度的表面的电气元件。此外，在基板的整个上表面上形成功能材料层（功能层），并对其进行图案化以获得具有与电气元件接触的两个底面的功能元件。

9. 发明申请

US20110155430A1 ANISOTROPIC CONDUCTIVE ADHESIVE COMPOSITE AND FILM, AND CIRCUIT CONNECTING STRUCTURE INCLUDING THE SAME 有权
标题翻译：各向异性导电粘合复合材料和薄膜，以及包括其中的电路连接结构
公开(公告)号：US20110155430A1
公开(公告)日：2011-06-30
申请号：US12974476
申请日：2010-12-21
申请人： Gyu Ho LEE , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
发明人： Gyu Ho LEE , Young Woo Park , Il Rae Cho , Young Hun Kim , Kyoung Soo Park , Jin Seong Park , Dong Seon Uh , Kyung Jin Lee , Kwang Jin Jung
IPC分类号： H05K1/09 , H01B1/22
CPC分类号： C09J11/04 , C08K3/017 , C08K9/02 , C09J9/02 , H05K3/323 , H05K2201/0218
摘要： An anisotropic conductive adhesive composite and film includes a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.
摘要翻译：各向异性导电粘合剂复合材料和膜包括粘合剂和分散在粘合剂中的导电颗粒。导电颗粒包括铜芯颗粒和涂覆在相应的铜芯颗粒的表面上的金属涂层。

10. 发明申请

US20110007559A1 NANOWIRE AND MEMORY DEVICE USING IT AS A MEDIUM FOR CURRENT-INDUCED WALL DISPLACEMENT 有权
标题翻译：使用它作为电流感应壁位移介质的纳米和存储器件
公开(公告)号：US20110007559A1
公开(公告)日：2011-01-13
申请号：US12746473
申请日：2008-12-04
申请人： Kyung-Jin Lee , Hyun-Woo Lee , Soon-Wook Jung
发明人： Kyung-Jin Lee , Hyun-Woo Lee , Soon-Wook Jung
IPC分类号： G11C11/14 , H01B5/02
CPC分类号： G11C11/14 , B82Y10/00 , G11C11/5607 , G11C19/0808
摘要： Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per unit area, a domain wall thickness and a spin polarizability of a ferromagnet that is a constituent material of the nanowire, has a value of (formula 1 should be inserted here) a domain wall thickness, a width “*′” and a thickness −* of the nanowire satisfy the relationship of (formula 2 should be inserted here) The present invention can be designed such that a current density capable of driving a memory device utilizing the current-driven domain wall displacement has a value of less than (formula 3 should be inserted here), through the determination of the optimal nanowire width and thickness satisfying a value of a critical current density, Jc for the domain wall displacement below a certain value required for commercialization, for a given material in the nanowire with perpendicular anisotropy. According to such a configuration of the present invention, the current density required for the domain wall displacement can be at least 10 times or further lowered than the current density in currently available nano wires. Therefore, the present invention is capable of solving the problems associated with high power consumption and malfunction of the device due to generation of Joule heat and is also capable of achieving low-cost production of memory devices. 3 × 10 8  A  /  cm 2 ≤ Q ≤ 10 9  A  /  cm 2 , ( 1 ) 1.39 T / λ + 4.51 ≤ W λ ≤ 1.53 T / λ + 4.44 ( 2 ) 10 7  A  /  cm 2 , ( 3 )
摘要翻译：本文公开了使用其的纳米线和电流诱导畴壁位移型存储器件。纳米线具有垂直磁各向异性，并且以如下方式配置：当由单位面积的饱和磁化强度计算的参数Q为作为纳米线的构成材料的铁磁体的畴壁厚度和自旋极化率时，具有值（式1应该插入）畴壁厚度，宽度“*”“和纳米线的厚度 - *满足关系（式2应该插在这里）本发明可以被设计成使得电流通过确定满足临界电流密度值的最佳纳米线宽度和厚度，能够利用电流驱动畴壁位移驱动存储器件的密度具有小于（在此应插入公式3）的值Jc 对于具有垂直各向异性的纳米线中的给定材料，域壁位移低于商业化所需的一定值。根据本发明的这种结构，畴壁位移所需的电流密度可以是目前可用的纳米线中的电流密度的10倍以上。因此，本发明能够解决由于焦耳热的产生而导致的高功耗和故障的问题，并且也能够实现低成本地生产存储器件。 3×10 8 A / cm 2≤Q≤109 A / cm 2，（1）1.39 T /λ+4.51≤Wλ≤1.53T /λ+ 4.44（2）10 7 / cm 2，（3）

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