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1. 发明申请

US20110108194A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110108194A1
公开(公告)日：2011-05-12
申请号：US12694363
申请日：2010-01-27
申请人： Ken YOSHIOKA , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Ken YOSHIOKA , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： C23F1/08 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/321 , H01J37/3211
摘要： The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.
摘要翻译：本发明提供一种等离子体处理装置，其中环状导体8a和8b布置在由内周线圈1a和外周线圈1b构成的感应天线1的附近。环形导体8a和8b的特征在于，从设备中心的半径和导体主体的横截面形状沿线圈的圆周角度变化。由于控制环状导体8a，8b与感应天线1之间以及环状导体8a，8b与周边位置之间的等离子体之间的互感，因此能够补偿沿着感应天线1的线圈的周长，并且提高所产生的等离子体中的电流的圆周方向的不均匀性。

2. 发明申请

US20090223633A1 Apparatus And Method For Plasma Etching 失效
标题翻译：等离子体蚀刻装置和方法
公开(公告)号：US20090223633A1
公开(公告)日：2009-09-10
申请号：US12434877
申请日：2009-05-04
申请人： Go MIYA , Manabu EDAMURA , Ken YOSHIOKA , Ryoji NISHIO
发明人： Go MIYA , Manabu EDAMURA , Ken YOSHIOKA , Ryoji NISHIO
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamber 13 which performs plasma processing on an object to be processed 1, a first processing gas supply source 40, a second processing gas supply source 50, a first gas inlet 65-1 which introduces a processing gas into the processing chamber, second gas inlets 65-2 which introduce the processing gas into the processing chamber, flow rate regulators 42 and 53 which regulate the flow rate of the processing gas and a gas shunt 60 which divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shunt 60 are provided with the first gas inlet 65-1 or second gas inlets 65-2 and merging sections 63-1 and 63-2 are provided between the shunt 60 and the first gas inlet 65-1 and between the shunt 60 and the second gas inlets 65-2 for merging the second processing gas.
摘要翻译：提供了能够对具有大直径的待处理物体进行具有优异的面内均匀性的处理的等离子体蚀刻装置。本发明提供一种等离子体蚀刻装置，其包括对被处理物1进行等离子体处理的处理室13，第一处理气体供给源40，第二处理气体供给源50，第一气体供给源进入处理室的处理气体，将处理气体引入处理室的第二气体入口65-2，调节处理气体的流量的流量调节器42和53以及将第一处理气体其中由分流器60分支的至少两个气体管道设置有第一气体入口65-1或第二气体入口65-2以及合流部分63-1和63-2，分流器60 和第一气体入口65-1以及分流器60和第二气体入口65-2之间，用于合并第二处理气体。

3. 发明申请

US20120000774A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20120000774A1
公开(公告)日：2012-01-05
申请号：US13230214
申请日：2011-09-12
申请人： Ken YOSHIOKA , Yutaka OMOTO , Mamoru YAKUSHIJI , Tsunehiko TSUBONE , Kazunori NAKAMOTO
发明人： Ken YOSHIOKA , Yutaka OMOTO , Mamoru YAKUSHIJI , Tsunehiko TSUBONE , Kazunori NAKAMOTO
IPC分类号： C23C14/34
CPC分类号： H01L21/6831 , G05D23/1932 , G05D23/22 , H01L21/67109 , H01L21/67276
摘要： A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.
摘要翻译：一种等离子体处理装置，其特征在于，包括要被减压和排出的处理室，设置在处理室中并具有放置有待处理基板的样品放置面的样品放置电极，在处理室中产生等离子体的电磁产生装置向处理室供给处理气体的供给系统，在处理室内排出的真空排气系统，设置在样本设置电极上的加热器层和基底温度监视器，估计晶片的晶片温度估计单元来自基础温度监视器和等离子体形成电源的温度，以及根据来自温度估计单元的输出来调节加热器的控制器。

4. 发明申请

US20100294432A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100294432A1
公开(公告)日：2010-11-25
申请号：US12850664
申请日：2010-08-05
申请人： Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
发明人： Manabu EDAMURA , Ken YOSHIOKA , Takeshi SHIMADA
IPC分类号： H01L21/44
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/321
摘要： A plasma processing apparatus, a processing chamber having one surface formed by a flat-plate-like insulating-material manufactured window, a sample mounting electrode having a sample mounting plane formed on a surface opposed to the insulating-material manufactured window, a gas-inlet for a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, an inductively coupled antenna formed outside OF the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber, a radio-frequency power supply, and an LC circuit. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined as a longitudinal direction, the direction extending perpendicular to the sample mounting plane.
摘要翻译：一种等离子体处理装置，具有由平板状绝缘材料制造的窗口形成的一个表面的处理室，具有形成在与绝缘材料制造窗口相对的表面上的样品安装面的样品安装电极，用于形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线的入口，其具有以径向图案设置的狭缝，在绝缘材料制造的窗口外部形成的电感耦合天线，并且执行与通过窗口的等离子体，等离子体形成在处理室内，射频电源和LC电路。电感耦合天线由线圈构成，该线圈被定义为纵向的方向多次缠绕，该方向垂直于样品安装平面延伸。

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