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1. 发明授权

US07630858B1 Tool health information monitoring and tool performance analysis in semiconductor processing 失效
标题翻译：半导体加工中的工具健康信息监测和刀具性能分析
公开(公告)号：US07630858B1
公开(公告)日：2009-12-08
申请号：US11904858
申请日：2007-09-28
申请人： Susan Weiher-Telford , Stefan Soens
发明人： Susan Weiher-Telford , Stefan Soens
IPC分类号： G06F17/18 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31477 , G05B2219/32221 , G05B2219/45031 , H01L21/67276 , H01L21/67288 , Y02P90/22
摘要： A plurality of tool identifiers, a plurality of information types, and a plurality of report types are displayed in a first user interface of a tool health reporting system. A user selection of a distinct report type from the plurality of report types, a distinct information type from the plurality of information types, and a distinct tool identifier from the plurality of tool identifiers are received. A report is displayed in a second user interface of the tool health reporting system, the report including data associated with the distinct information type, the distinct report type and the distinct tool identifier, wherein the report correlates equipment based measurement data to product level measurement data.
摘要翻译：在工具健康报告系统的第一用户界面中显示多个工具标识符，多个信息类型和多个报告类型。接收来自多个报告类型的不同报告类型的用户选择，来自多个信息类型的不同信息类型以及来自多个工具标识符的不同工具标识符。报告显示在工具健康报告系统的第二用户界面中，报告包括与不同信息类型相关联的数据，不同报告类型和不同的工具标识符，其中该报告将基于设备的测量数据与产品级测量数据相关联。

2. 发明授权

US6090706A Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein 失效
标题翻译：在将钨硅化物涂层沉积在其上的活性基底上之前处理沉积室的预处理过程
公开(公告)号：US6090706A
公开(公告)日：2000-07-18
申请号：US140818
申请日：1998-08-26
申请人： Susan Weiher Telford , Michio Aruga , Mei Chang
发明人： Susan Weiher Telford , Michio Aruga , Mei Chang
IPC分类号： C23C16/42 , C23C16/44 , H01L21/44
CPC分类号： C23C16/4404 , C23C16/42 , Y10S438/906
摘要： A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.
摘要翻译：公开了一种用于预处理硅化钨沉积室的表面的方法，在先前的清洁腔室之后，以及在室中的有源衬底上沉积钨硅化物之前，首先包括用气态硅源处理室表面，作为硅烷和含钨气体，例如WF 6，以在室表面上形成硅烷基硅化钨的第一次沉积。在优选的实施方案中，预处理方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2），一氯硅烷（SiCl 2） SiHCl 3）或三氯硅烷（SiHCl 3），以在淀积室中的活性基底上沉积钨硅化物之前，在先前沉积的硅化钨上形成氯取代的硅烷基硅化钨沉积物。

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