专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06897131B2 Advances in spike anneal processes for ultra shallow junctions 失效
标题翻译：超浅结点尖峰退火工艺的进展
公开(公告)号：US06897131B2
公开(公告)日：2005-05-24
申请号：US10668682
申请日：2003-09-22
申请人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
发明人： Balasubramanian Ramachandran , Ravi Jallepally , Ryan C. Boas , Sundar Ramamurthy , Amir Al-Bayati , Houda Graoui , Joseph M. Spear
IPC分类号： H01L21/00 , H01L21/265 , H01L21/268 , H01L21/324 , H01L21/425
CPC分类号： H01L21/324 , H01L21/26513 , H01L21/2686 , H01L21/67109 , H01L21/67115
摘要： Lamp based spike annealing was improved to address the aggressive requirements of
摘要翻译：改进了基于灯的尖峰退火以满足<100nm超浅结点（USJ）技术的积极要求。改进的重点是提高冷却速率，从而提高尖峰锐度。然后将具有不同离子注入能量和剂量的硼离子注入衬底退火以表征尖峰退火的改进。在具有改进的尖峰轮廓退火的基底上实现了薄膜电阻和结深度的大于10％的改善。改进的尖峰退火具有与标准尖峰退火相同的可比均匀性。

2. 发明授权

US07482255B2 Method of ion implantation to reduce transient enhanced diffusion 有权
标题翻译：离子注入法减少瞬时增强扩散
公开(公告)号：US07482255B2
公开(公告)日：2009-01-27
申请号：US11302499
申请日：2005-12-14
申请人： Houda Graoui , Majeed Ali Foad , Amir Al-Bayati
发明人： Houda Graoui , Majeed Ali Foad , Amir Al-Bayati
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/268
摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.
摘要翻译：离子注入的方法包括以下步骤：提供半导体衬底; 在所述半导体衬底中以与所述半导体衬底的表面的法线成20-60°的范围内的角度在所述半导体衬底中进行预非晶化注入，以及在所述半导体衬底中进行掺杂剂的注入以提供一个浅交界处。在本发明的特征中，该方法还包括在半导体衬底中执行缺陷俘获元件的注入，并且以第一注入能量执行预非晶化注入步骤，并且在第二次执行缺陷俘获元件的注入注入能量，第一注入能量与第二注入能量之比在10-40％的范围内。

3. 发明申请

US20060160338A1 Method of ion implantation to reduce transient enhanced diffusion 有权
公开(公告)号：US20060160338A1
公开(公告)日：2006-07-20
申请号：US11302499
申请日：2005-12-14
申请人： Houda Graoui , Majeed Foad , Amir Al-Bayati
发明人： Houda Graoui , Majeed Foad , Amir Al-Bayati
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/26586 , H01L21/268
摘要： A method of ion implantation comprises the steps of: providing a semiconductor substrate; performing a pre-amorphisation implant in the semiconductor substrate in a direction of implant at an angle in the range of 20-60° to a normal to a surface of the semiconductor substrate, and performing an implant of a dopant in the semiconductor substrate to provide a shallow junction. In a feature of the invention, the method further comprises performing an implant of a defect trapping element in the semiconductor substrate and the pre-amorphisation implant step is performed at a first implant energy and the implant of a defect trapping element is performed at a second implant energy, the ratio of the first implant energy to the second implant energy being in the range of 10-40%.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式