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1. 发明授权

US08385080B2 Semiconductor module, socket for the same, and semiconductor module/socket assembly 有权
标题翻译：半导体模块，插座相同，以及半导体模块/插座组件
公开(公告)号：US08385080B2
公开(公告)日：2013-02-26
申请号：US13006692
申请日：2011-01-14
申请人： Jung-Hoon Kim , Seong-Chan Han , Dong-Chun Lee , Jae-Hoon Choi , Sun-Kyu Hwang
发明人： Jung-Hoon Kim , Seong-Chan Han , Dong-Chun Lee , Jae-Hoon Choi , Sun-Kyu Hwang
IPC分类号： H05K7/00
CPC分类号： H05K7/00
摘要： A semiconductor module, a socket for the same, and a semiconductor module/socket assembly are disclosed. The semiconductor module includes a printed circuit board including a plurality of semiconductor devices, a plurality of insulating layers and a plurality of metal layers, the plurality of insulating layers and the plurality of metal layers are alternately stacked. Exposed portions of the metal layers are exposed to the outside of the semiconductor module at a first and a second ends of the printed circuit board. The first end and the second end are at opposite ends of the printed circuit board.
摘要翻译：公开了半导体模块，用于其的插座和半导体模块/插座组件。半导体模块包括具有多个半导体器件，多个绝缘层和多个金属层的印刷电路板，多个绝缘层和多个金属层交替堆叠。金属层的露出部分在印刷电路板的第一和第二端处暴露于半导体模块的外部。第一端和第二端位于印刷电路板的相对端。

2. 发明授权

US08148828B2 Semiconductor packaging device 有权
标题翻译：半导体封装器件
公开(公告)号：US08148828B2
公开(公告)日：2012-04-03
申请号：US12604680
申请日：2009-10-23
申请人： Dong-Woo Shin , Seong-Chan Han , Sun-Kyu Hwang , Hyun-Jong Oh , Nam-Yong Oh
发明人： Dong-Woo Shin , Seong-Chan Han , Sun-Kyu Hwang , Hyun-Jong Oh , Nam-Yong Oh
IPC分类号： H01L23/48 , H01L23/34
CPC分类号： H01L23/24 , H01L25/105 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2225/1005 , H01L2225/1058 , H01L2924/00014 , H05K3/284 , H05K2201/10515 , H05K2201/10734 , H05K2201/2018 , H05K2203/1316 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor packaging device is provided. Semiconductor package groups, a side retainer wall, and a filling layer may be located on a base plate. The side retainer wall may be located around the semiconductor package groups. The filling layer may be located between the side retainer wall and the semiconductor package groups.
摘要翻译：提供半导体封装装置。半导体封装组，侧保持器壁和填充层可以位于基板上。侧保持器壁可以位于半导体封装组周围。填充层可以位于侧保持器壁和半导体封装组之间。

3. 发明授权

US07902664B2 Semiconductor package having passive component and semiconductor memory module including the same 有权
标题翻译：具有无源元件的半导体封装和包括该元件的半导体存储器模块
公开(公告)号：US07902664B2
公开(公告)日：2011-03-08
申请号：US11878084
申请日：2007-07-20
申请人： Hyo-jae Bang , Dong-chun Lee , Seong-chan Han , Kyung-du Kim , Sun-kyu Hwang
发明人： Hyo-jae Bang , Dong-chun Lee , Seong-chan Han , Kyung-du Kim , Sun-kyu Hwang
IPC分类号： H01L23/34
CPC分类号： H01L23/13 , H01L23/49816 , H01L23/49838 , H01L23/50 , H01L24/45 , H01L24/48 , H01L25/105 , H01L25/16 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/4824 , H01L2224/73215 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/12041 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H05K1/0231 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： Example embodiments relate to a semiconductor package. The semiconductor package may include a mounting substrate, a semiconductor chip mounted to the mounting substrate, at least one passive component passing therethrough and mounted to the mounting substrate, and a cover covering the mounting substrate, the semiconductor chip and the at least one passive component.
摘要翻译：示例实施例涉及半导体封装。半导体封装可以包括安装基板，安装到安装基板的半导体芯片，穿过其中并安装到安装基板的至少一个无源部件，以及覆盖安装基板，半导体芯片和至少一个无源部件。

4. 发明申请

US20100102427A1 SEMICONDUCTOR PACKAGING DEVICE 有权
标题翻译：半导体封装器件
公开(公告)号：US20100102427A1
公开(公告)日：2010-04-29
申请号：US12604680
申请日：2009-10-23
申请人： Dong-Woo Shin , Seong-Chan Han , Sun-Kyu Hwang , Hyun-Jong Oh , Nam-Yong Ho
发明人： Dong-Woo Shin , Seong-Chan Han , Sun-Kyu Hwang , Hyun-Jong Oh , Nam-Yong Ho
IPC分类号： H01L25/065 , H01L23/52
CPC分类号： H01L23/24 , H01L25/105 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2225/1005 , H01L2225/1058 , H01L2924/00014 , H05K3/284 , H05K2201/10515 , H05K2201/10734 , H05K2201/2018 , H05K2203/1316 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor packaging device is provided. Semiconductor package groups, a side retainer wall, and a filling layer may be located on a base plate. The side retainer wall may be located around the semiconductor package groups. The filling layer may be located between the side retainer wall and the semiconductor package groups.
摘要翻译：提供半导体封装装置。半导体封装组，侧保持器壁和填充层可以位于基板上。侧保持器壁可以位于半导体封装组周围。填充层可以位于侧保持器壁和半导体封装组之间。

5. 发明申请

US20050285502A1 Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same 失效
标题翻译：具有通过使用阳极氧化工艺制造的三极管结构的电场发射器件及其制造方法
公开(公告)号：US20050285502A1
公开(公告)日：2005-12-29
申请号：US10522572
申请日：2003-07-30
申请人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
发明人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
IPC分类号： H01J1/304 , H01J9/02 , H01J21/10 , H01J1/62 , H01J63/04
CPC分类号： H01J21/105 , H01J9/025
摘要： An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.
摘要翻译：通过使用阳极氧化工艺制造具有三极管结构的电场发射器件。该器件包括支撑衬底，用作器件的阴极电极的底部电极层，具有多个第一子微孔的栅极绝缘层，具有多个第二子微孔的栅极电极层对于第一子微孔，具有连接到第二子微孔的多个第三子微孔的阳极绝缘层，用于气密密封器件的顶电极层，顶电极层用作阳极的阳极所述装置和形成在所述第一子微孔中的多个发射器。发射体形成为尽可能接近器件的电极，导致驱动电压降低。

6. 发明申请

US20100146813A1 APPARATUS AND METHOD FOR DRYING SUBSTRATES 有权
标题翻译：干燥基材的装置和方法
公开(公告)号：US20100146813A1
公开(公告)日：2010-06-17
申请号：US12600550
申请日：2008-05-22
申请人： Young-Ju Jeong , Bok-Kyu Lee , Sun-Kyu Hwang , Jeong-Yong Bae , Soo-Bin Yong
发明人： Young-Ju Jeong , Bok-Kyu Lee , Sun-Kyu Hwang , Jeong-Yong Bae , Soo-Bin Yong
IPC分类号： F26B3/32 , F26B19/00
CPC分类号： F26B21/14 , F26B3/00 , H01L21/02057 , H01L21/67034 , H01L21/67051
摘要： A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.
摘要翻译：使用异丙醇（IPA）干燥基材的方法包括：将加热的流体注入基材的底表面的前期，同时提高基材的温度，以将有机溶剂注入到将干燥气体的基材和其上表面注入，以提高有机溶剂的蒸发能力; 并且终止加热流体的注入并将有机溶剂和干燥气体注入到基板的顶表面的最后阶段。

7. 发明授权

US07601043B2 Method of manufacturing microholes in a cathode substrate of a field emission display using anodic oxidation 失效
标题翻译：在使用阳极氧化的场致发射显示器的阴极基板中制造微孔的方法
公开(公告)号：US07601043B2
公开(公告)日：2009-10-13
申请号：US10542378
申请日：2003-12-26
申请人： Kun Hong Lee , Sun Kyu Hwang , Ok Joo Lee
发明人： Kun Hong Lee , Sun Kyu Hwang , Ok Joo Lee
IPC分类号： H01J9/00
CPC分类号： H01J31/127 , H01J2201/304 , H01J2329/00
摘要： A field emission display (FED) with an integrated triode structure is provided. The FED can be manufactured without using a complex packaging process and have a significantly reduced well diameter and a significantly reduced cathode-to-anode distance. In the FED, front and rear panels form a single body using an anode insulating layer as an intermediate. A method for manufacturing the FED using anodic oxidation is also provided.
摘要翻译：提供具有集成三极管结构的场发射显示器（FED）。 FED可以在不使用复杂包装工艺的情况下制造，并且具有显着减小的井直径和显着降低的阴极到阳极的距离。在FED中，使用阳极绝缘层作为中间体，前面板和后面板形成单体。还提供了使用阳极氧化制造FED的方法。

8. 发明授权

US08793898B2 Apparatus and method for drying substrates 有权
标题翻译：用于干燥基材的装置和方法
公开(公告)号：US08793898B2
公开(公告)日：2014-08-05
申请号：US12600550
申请日：2008-05-22
申请人： Young-Ju Jeong , Bok-Kyu Lee , Sun-Kyu Hwang , Jeong-Yong Bae , Soo-Bin Yong
发明人： Young-Ju Jeong , Bok-Kyu Lee , Sun-Kyu Hwang , Jeong-Yong Bae , Soo-Bin Yong
IPC分类号： F26B3/00
CPC分类号： F26B21/14 , F26B3/00 , H01L21/02057 , H01L21/67034 , H01L21/67051
摘要： A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.
摘要翻译：使用异丙醇（IPA）干燥基材的方法包括：将加热的流体注入基材的底表面的前期，同时提高基材的温度，以将有机溶剂注入到将干燥气体的基材和其上表面注入，以提高有机溶剂的蒸发能力; 并且终止加热流体的注入并将有机溶剂和干燥气体注入到基板的顶表面的最后阶段。

9. 发明申请

US20110168761A1 APPARATUS FOR REPAIRING SEMICONDUCTOR MODULE 审中-公开
标题翻译：修理半导体模块的装置
公开(公告)号：US20110168761A1
公开(公告)日：2011-07-14
申请号：US12987550
申请日：2011-01-10
申请人： Sun-kyu Hwang , Seong-chan Han , Kwang-ho Chun , Jung-hoon Kim , Dong-su Han
发明人： Sun-kyu Hwang , Seong-chan Han , Kwang-ho Chun , Jung-hoon Kim , Dong-su Han
IPC分类号： B23K1/018
CPC分类号： B23K1/018 , B23K1/0016 , B23K1/206 , B23K3/047 , B23K3/08 , B23K2101/42 , H01L24/75 , H01L24/799 , H01L2224/81
摘要： An apparatus for repairing a semiconductor module including: a heating block comprising a thermal contact surface for contacting a defective semiconductor package mounted on a substrate of the semiconductor module to heat the defective semiconductor package using a conduction method and to melt a solder of the defective semiconductor package, and a vacuum adsorption line for adsorbing the defective semiconductor package and separating the defective semiconductor package from the substrate; and a heater installed in the heating block.
摘要翻译：一种用于修复半导体模块的装置，包括：加热块，其包括热接触表面，用于接触安装在半导体模块的基板上的有缺陷的半导体封装，以使用导电方法加热缺陷半导体封装并熔化缺陷半导体的焊料封装，以及用于吸附有缺陷的半导体封装并将有缺陷的半导体封装与衬底分离的真空吸附线; 以及安装在加热块中的加热器。

10. 发明授权

US07554255B2 Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same 失效
标题翻译：具有通过使用阳极氧化工艺制造的三极管结构的电场发射器件及其制造方法
公开(公告)号：US07554255B2
公开(公告)日：2009-06-30
申请号：US10522572
申请日：2003-07-30
申请人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
发明人： Kun-Hong Lee , Sun-Kyu Hwang , Soo-Hwan Jeong
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J21/105 , H01J9/025
摘要： An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.
摘要翻译：通过使用阳极氧化工艺制造具有三极管结构的电场发射器件。该器件包括支撑衬底，用作器件的阴极电极的底部电极层，具有多个第一子微孔的栅极绝缘层，具有多个第二子微孔的栅极电极层对于第一子微孔，具有连接到第二子微孔的多个第三子微孔的阳极绝缘层，用于气密密封器件的顶电极层，顶电极层用作阳极的阳极所述装置和形成在所述第一子微孔中的多个发射器。发射体形成为尽可能接近器件的电极，导致驱动电压降低。

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