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    • 8. 发明授权
    • Electric field emission device having a triode structure fabricated by using an anodic oxidation process and method for fabricating same
    • 具有通过使用阳极氧化工艺制造的三极管结构的电场发射器件及其制造方法
    • US07554255B2
    • 2009-06-30
    • US10522572
    • 2003-07-30
    • Kun-Hong LeeSun-Kyu HwangSoo-Hwan Jeong
    • Kun-Hong LeeSun-Kyu HwangSoo-Hwan Jeong
    • H01J1/62H01J63/04
    • H01J21/105H01J9/025
    • An electric field emission device having a triode structure is fabricated by using an anodic oxidation process. The device includes a supporting substrate, a bottom electrode layer to be used as an cathode electrode of the device, a gate insulating layer having a plurality of first sub-micro holes, a gate electrode layer having a plurality of second sub-micro holes connecting to the first sub-micro holes, an anode insulating layer having a plurality of third sub-micro holes connecting to the second sub-micro holes, a top electrode layer for hermetically sealing the device, the top electrode layer being used as an anode of the device and a plurality of emitters formed in the first sub-micro holes. The emitters are formed so as to come into as close contact as possible to the electrodes of the device, which results in decreasing a driving voltage.
    • 通过使用阳极氧化工艺制造具有三极管结构的电场发射器件。 该器件包括支撑衬底,用作器件的阴极电极的底部电极层,具有多个第一子微孔的栅极绝缘层,具有多个第二子微孔的栅极电极层 对于第一子微孔,具有连接到第二子微孔的多个第三子微孔的阳极绝缘层,用于气密密封器件的顶电极层,顶电极层用作阳极的阳极 所述装置和形成在所述第一子微孔中的多个发射器。 发射体形成为尽可能接近器件的电极,导致驱动电压降低。