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1. 发明申请

US20050016443A1 Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature 失效
公开(公告)号：US20050016443A1
公开(公告)日：2005-01-27
申请号：US10623967
申请日：2003-07-21
申请人： Zheng Lu , Steven Kimbel
发明人： Zheng Lu , Steven Kimbel
IPC分类号： C30B15/20 , C30B29/06 , C30B35/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/20 , C30B29/06 , C30B35/00 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： A method and apparatus for controlling the quenching rate of a monocrystalline ingot pulled from a melt by adjusting one or more post growth processing parameter. A temperature model generates a temperature profile that represents the surface temperature along the length of the ingot at the instant it is pulled from the melt. A first temperature at a particular location along the length of the crystal is determined from the temperature profile. A temperature sensor senses a second temperature at the same particular location. A PLC calculates a quenching rate of the crystal as a function of the first temperature and the second temperature. The PLC generates an error between a target quenching rate and a calculated quenching rate, and one or more post growth process parameters are adjusted as function of the error signal to optimize the quenching rate. Alternatively, temperature readings from the sensor are collected and the quenching rates of the crystal are calculated after crystal growth and post growth quenching. One or more post growth process parameters are modified and programmed for subsequent crystal growth and post growth quenching to achieve optimized quenching rate and crystal quality.

2. 发明申请

US20060005761A1 Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length 审中-公开
标题翻译：通过控制熔体 - 固体界面形状作为轴向长度的函数来生长硅晶体的方法和装置
公开(公告)号：US20060005761A1
公开(公告)日：2006-01-12
申请号：US11145626
申请日：2005-06-06
申请人： Milind Kulkarni , Vijay Nithiananthan , Lee Ferry , JaeWoo Ryu , JinYong Uhm , Steven Kimbel , ChangBum Kim , Joseph Holzer , Richard Schrenker , KangSeon Lee
发明人： Milind Kulkarni , Vijay Nithiananthan , Lee Ferry , JaeWoo Ryu , JinYong Uhm , Steven Kimbel , ChangBum Kim , Joseph Holzer , Richard Schrenker , KangSeon Lee
IPC分类号： C30B15/00 , C30B15/30 , C30B21/06 , C30B27/02
CPC分类号： C30B29/06 , C30B15/22 , C30B15/30 , Y10T117/1008 , Y10T117/1052
摘要： The present invention provides a methods and system for producing semiconductor grade single crystals that are substantially free of undesirable agglomerated defects. A vacancy/interstial (V/I) boundary simulator analyzes various melt-solid interface shapes to predict a corresponding V/I transition curve for each of the various melt-solid interface shapes. A target melt-solid interface shape corresponding to a substantially flat V/I curve is identified for each of a plurality of axial positions along the length of the crystal. Target operating parameters to achieve each of the identified melt-solid interface shapes are stored in a melt-solid interfaced shape profile. A control system is responsive to the stored profile to generate one or more control signals to control one or more output devices such that the melt-solid interfaced shape substantially follows the target shapes as defined by the profile during crystal growth.
摘要翻译：本发明提供了一种生产半导体级单晶的方法和系统，其基本上没有不希望的附聚缺陷。空位/间隙（V / I）边界模拟器分析各种熔体 - 固体界面形状，以预测各种熔体 - 固体界面形状的相应V / I过渡曲线。对于沿着晶体长度的多个轴向位置中的每一个，识别对应于基本上平坦的V / I曲线的目标熔体 - 固体界面形状。实现每个识别的熔体 - 固体界面形状的目标操作参数被存储在熔体 - 固体界面形状轮廓中。控制系统响应于存储的轮廓以产生一个或多个控制信号以控制一个或多个输出装置，使得熔体 - 固体接合形状基本上遵循在晶体生长期间由轮廓限定的目标形状。

3. 发明申请

US20050150445A1 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 有权
标题翻译：具有基本上不含氧化诱导的堆垛层错的空位主导的核的低缺陷密度的硅
公开(公告)号：US20050150445A1
公开(公告)日：2005-07-14
申请号：US11005987
申请日：2004-12-07
申请人： Chang Kim , Steven Kimbel , Jeffrey Libbert , Mohsen Banan
发明人： Chang Kim , Steven Kimbel , Jeffrey Libbert , Mohsen Banan
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/02 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种制备单晶硅锭的方法，以及由此产生的锭或晶片。该方法包括控制（i）生长速度v，（ii）平均轴向温度梯度G 0 O 3，和（iii）晶体从凝固到约750℃的冷却速率。，以便形成具有第一轴向对称区域的区段，该第一轴向对称区域从该晶锭的侧表面径向向内延伸，其中硅自间隙是主要的固有点缺陷，以及第二轴向对称区域，其从第一并朝向锭的中心轴线。该方法的特征在于控制v，G 0和冷却速率以防止在第一区域中形成凝聚的固有点缺陷，同时进一步控制冷却速率以限制氧化物的形成在对晶片进行氧化处理（其他适用于形成这样的故障的氧化处理）之后，在来自该段的晶片中引起堆垛层错。

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