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    • 1. 发明授权
    • Transistor switch with integral body connection to prevent latchup
    • 晶体管开关具有整体连接,以防止闭锁
    • US07486127B2
    • 2009-02-03
    • US11835298
    • 2007-08-07
    • Hayden C. CranfordStacy J. GarvinTodd M. Rasmus
    • Hayden C. CranfordStacy J. GarvinTodd M. Rasmus
    • H03K3/01
    • H03K17/161H03K2217/0018
    • A circuit device having a transistor-based switch topology that substantially eliminates the possibility of latchup of the device. A series-connected low voltage threshold (LVT) N-channel transistor and a pull-up resistor are coupled across a switching (P-channel) transistor so that an integral body connection is provided for the switching transistor, which connects the body of the switching transistor to a node between the pull-up resistor and source terminal of the LVT transistor. The LVT transistor is connected with its gate and drain terminal connected to the output terminal of the switching transistor. The resistor is connected at its other end to the power supply side terminal of the switching transistor. The addition of these components in the particular configuration allows the body connection of the switching transistor to be automatically switched to the highest potential diffusion node.
    • 一种具有基于晶体管的开关拓扑的电路器件,其基本上消除了器件闭锁的可能性。 串联的低电压阈值(LVT)N沟道晶体管和上拉电阻跨越开关(P沟道)晶体管耦合,以便为开关晶体管提供一体的主体连接,开关晶体管连接 开关晶体管连接到LVT晶体管的上拉电阻和源极端子之间的一个节点。 LVT晶体管的栅极和漏极端子连接到开关晶体管的输出端子。 电阻器的另一端连接到开关晶体管的电源侧端子。 在特定配置中添加这些组件允许开关晶体管的主体连接自动切换到最高电位扩散节点。
    • 9. 发明授权
    • Low voltage CMOS circuit for on/off chip drive at high voltage
    • 低压CMOS电路用于高电压开/关芯片驱动
    • US6031394A
    • 2000-02-29
    • US4565
    • 1998-01-08
    • Hayden C. Cranford, Jr.Stacy J. GarvinGeoffrey B. Stephens
    • Hayden C. Cranford, Jr.Stacy J. GarvinGeoffrey B. Stephens
    • H03K3/356H03K17/10H03K19/0175H03K19/00H03K19/003H03K19/094
    • H03K3/356147H03K17/102
    • A low voltage CMOS circuit and method provide output current ability meeting multimode requirements of high voltage off-chip drivers while protecting the CMOS devices from various breakdown mechanisms. The circuit and method utilize intermediate voltages between two power rails and voltage division techniques to limit the voltages to acceptable limits for drain-to-source, gate-to-drain, and gate-to-source of CMOS devices in any chosen technology. The circuit comprises first and second CMOS cascode chains connected between a high voltage power rail, e.g 5 volt and a reference potential power rail, e.g. ground. Each CMOS cascode chain comprises first and second p-type MOS devices in series with first and second n-type MOS devices. An input circuit is coupled to a node at the midpoint of the first CMOS cascode chain. A bias voltage, typically 3.3 volts is connected to the NMOS devices in the first and CMOS cascode chains. A second bias voltage is coupled to the PMOS devices in the first and second CMOS cascode chains. An output is provided from the second CMOS cascode chain to a third CMOS cascode chain for purposes of providing sufficient pullup capability to drive an output circuit comprising a fourth CMOS cascode chain between the high and reference potentials without exceeding the breakdown mechanisms for any MOS device in the CMOS cascode chains.
    • 低电压CMOS电路和方法提供满足多电压芯片驱动器多模式要求的输出电流能力,同时保护CMOS器件免受各种故障机制的影响。 电路和方法利用两个电源轨之间的中间电压和分压技术,将电压限制在任何所选技术中的CMOS器件的漏极到源极,栅极到漏极和栅极到源极的可接受的极限。 该电路包括第一和第二CMOS共源共栅链,其连接在例如5伏的高压电源轨和参考电位电源轨之间。 地面。 每个CMOS共源共栅链包括与第一和第二n型MOS器件串联的第一和第二p型MOS器件。 输入电路耦合到第一CMOS共源共栅链的中点的节点。 通常3.3伏的偏置电压连接到第一和CMOS共源共栅链中的NMOS器件。 第二偏置电压耦合到第一和第二CMOS共源共栅链中的PMOS器件。 从第二CMOS共源共栅链提供输出到第三CMOS共源共栅链,目的是提供足够的上拉能力,以在不超过任何MOS器件的击穿机制的情况下驱动包括高参考电位和参考电位之间的第四CMOS共源共栅链的输出电路 CMOS共源共栅链。
    • 10. 发明授权
    • Transistor switch with integral body connection to prevent latchup
    • 晶体管开关具有整体连接,以防止闭锁
    • US07268613B2
    • 2007-09-11
    • US11263008
    • 2005-10-31
    • Hayden C. Cranford, Jr.Stacy J. GarvinTodd M. Rasmus
    • Hayden C. Cranford, Jr.Stacy J. GarvinTodd M. Rasmus
    • G05F3/02
    • H03K17/161H03K2217/0018
    • A circuit device having a transistor-based switch topology that substantially eliminates the possibility of latchup of the device. A series-connected low voltage threshold (LVT) N-channel transistor and a pull-up resistor are coupled across a switching (P-channel) transistor so that an integral body connection is provided for the switching transistor, which connects the body of the switching transistor to a node between the pull-up resistor and source terminal of the LVT transistor. The LVT transistor is connected with its gate and drain terminal connected to the output terminal of the switching transistor. The resistor is connected at its other end to the power supply side terminal of the switching transistor. The addition of these components in the particular configuration allows the body connection of the switching transistor to be automatically switched to the highest potential diffusion node.
    • 一种具有基于晶体管的开关拓扑的电路器件,其基本上消除了器件闭锁的可能性。 串联的低电压阈值(LVT)N沟道晶体管和上拉电阻跨越开关(P沟道)晶体管耦合,以便为开关晶体管提供一体的主体连接,开关晶体管连接 开关晶体管连接到LVT晶体管的上拉电阻和源极端子之间的一个节点。 LVT晶体管的栅极和漏极端子连接到开关晶体管的输出端子。 电阻器的另一端连接到开关晶体管的电源侧端子。 在特定配置中添加这些组件允许开关晶体管的主体连接自动切换到最高电位扩散节点。