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1. 发明申请

US20070239309A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20070239309A1
公开(公告)日：2007-10-11
申请号：US11730891
申请日：2007-04-04
申请人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
发明人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
IPC分类号： G06F19/00
CPC分类号： B24B37/005 , B24B49/105 , B24B49/12
摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
摘要翻译：抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

2. 发明授权

US07021991B2 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US07021991B2
公开(公告)日：2006-04-04
申请号：US10670499
申请日：2003-09-26
申请人： Kazuo Shimizu , Shinro Ohta , Akihiro Tsukada
发明人： Kazuo Shimizu , Shinro Ohta , Akihiro Tsukada
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B23H5/08 , B24B37/046 , B24B49/12 , G01B11/0625
摘要： A polishing apparatus has a polishing table having a polishing surface, a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the polishing table, and a film thickness measuring device embedded in the polishing table. The film thickness measuring device includes a light source for applying light having a predetermined wavelength to a surface of the workpiece, a spectroscope for separating light reflected from the surface of the workpiece, and a charge coupled device array for capturing light separated by the spectroscope. The polishing apparatus also has a controller operable to analyze information captured by the charge coupled device array over the entire surface of the workpiece to obtain a film thickness at a desired point on the surface of the workpiece.
摘要翻译：抛光装置具有：具有研磨面的研磨台，用于保持待研磨的工件的顶环，并将工件压靠在研磨台上的研磨面上，以及嵌入在研磨台中的膜厚测量装置。膜厚测量装置包括：用于将一个具有预定波长的光施加到工件的表面的光源，用于分离从工件表面反射的光的分光器和用于捕获由分光镜分离的光的电荷耦合器件阵列。抛光装置还具有控制器，其可操作以分析由电荷耦合器件阵列在工件的整个表面上捕获的信息，以在工件表面上的期望点处获得膜厚度。

3. 发明授权

US08696924B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08696924B2
公开(公告)日：2014-04-15
申请号：US11730891
申请日：2007-04-04
申请人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
发明人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
IPC分类号： G06F19/00
CPC分类号： B24B37/005 , B24B49/105 , B24B49/12
摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
摘要翻译：抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

4. 发明授权

US07101257B2 Substrate polishing apparatus 有权
标题翻译：基材抛光装置
公开(公告)号：US07101257B2
公开(公告)日：2006-09-05
申请号：US10617789
申请日：2003-07-14
申请人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinro Ohta , Yasuo Tsukuda
发明人： Kazuto Hirokawa , Yoichi Kobayashi , Shunsuke Nakai , Shinro Ohta , Yasuo Tsukuda
IPC分类号： B24B49/00 , B24B5/02
CPC分类号： B24B37/12 , B24B37/013 , B24B49/12 , H01L21/30625
摘要： A substrate polishing apparatus polishes a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed and a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate. The substrate polishing apparatus also has a fluid supply passage for supplying a fluid for measurement, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the fluid for measurement to the fluid chamber.
摘要翻译：衬底抛光装置将诸如半导体晶片的衬底抛光成平面镜面。基板研磨装置具有：被加压基板的研磨台和发光和受光装置，用于将来自研磨台的测量光发射到基板，并接收来自基板的反射光，以测量基板上的膜。衬底抛光装置还具有用于将测量光和反射光通过的用于测量的流体供给到设置在抛光台的发光和光接收位置处的流体室的流体供给通道，以及流体供应控制装置，用于控制向流体室供给测量用流体。

5. 发明授权

US07081044B2 Polishing apparatus and polishing pad 失效
标题翻译：抛光设备和抛光垫
公开(公告)号：US07081044B2
公开(公告)日：2006-07-25
申请号：US10450647
申请日：2002-06-12
申请人： Shinro Ohta , Kazuo Shimizu
发明人： Shinro Ohta , Kazuo Shimizu
IPC分类号： B24B1/00 , B24D11/00
CPC分类号： B24B37/205 , H01L21/30625
摘要： A polishing pad (10) has an upper-layer pad (11) having a hole (11a) defined therein, a light-transmittable window (41) disposed in the hole (11a) for allowing light to pass therethrough, and a lower-layer pad (12) disposed below the upper-layer pad (11) and having a light passage hole (12a) defined therein which has substantially the same diameter as the hole (11a) in the upper-layer pad (11). A transparent film (13) with an adhesive agent applied to upper and lower surfaces thereof is interposed between the upper-layer pad (11) and the lower-layer pad (12). The hole (11a) defined in the upper-layer pad (11) and the light passage hole (12a) defined in the lower-layer pad (12) have substantially the same size as each other.
摘要翻译：抛光垫（10）具有其中限定有孔（11a）的上层衬垫（11），设置在孔（11a）中以允许光通过的透光窗（41）和下层焊盘（12），其设置在上层焊盘（11）的下方，并且具有限定在其中的光通过孔（12a），其具有与上层焊盘（11）中的孔（11a）基本相同的直径）。在上层衬垫（11）和下层衬垫（12）之间插入具有施加到其上表面和下表面的粘合剂的透明膜（13）。限定在上层衬垫（11）中限定的孔（11a）和限定在下层衬垫（12）中的光通孔（12a）具有大致相同的尺寸。

6. 发明申请

US20100015889A1 Processing end point detection method, polishing method,and polishing apparatus 有权
标题翻译：处理终点检测方法，抛光方法和抛光装置
公开(公告)号：US20100015889A1
公开(公告)日：2010-01-21
申请号：US12311560
申请日：2007-10-05
申请人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
发明人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
IPC分类号： B24B49/04 , B24B49/12 , B24B37/04
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , B24B49/16 , B24D7/12 , G01B11/0675 , G01N21/55 , G01N21/9501 , G05B19/406 , G05B19/4065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
摘要翻译：本发明涉及通过计算工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）的处理终点检测方法，例如底物。该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值并且通过在工件的加工期间检测特征点来检测工件的加工终点。

7. 发明授权

US08554356B2 Processing end point detection method, polishing method, and polishing apparatus 有权
标题翻译：处理终点检测方法，抛光方法和抛光装置
公开(公告)号：US08554356B2
公开(公告)日：2013-10-08
申请号：US12311560
申请日：2007-10-05
申请人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
发明人： Noburu Shimizu , Shinro Ohta , Koji Maruyama , Yoichi Kobayashi , Ryuichiro Mitani , Shunsuke Nakai , Atsushi Shigeta
IPC分类号： G06F19/00 , G01B11/00 , B24B49/00 , B24B51/00 , G05B19/406 , G05B19/4065 , G01B11/06 , B24B49/16 , B24B49/12
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , B24B49/16 , B24D7/12 , G01B11/0675 , G01N21/55 , G01N21/9501 , G05B19/406 , G05B19/4065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.
摘要翻译：处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值并且通过在工件的加工期间检测特征点来检测工件的加工终点。

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