专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08696924B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08696924B2
公开(公告)日：2014-04-15
申请号：US11730891
申请日：2007-04-04
申请人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
发明人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
IPC分类号： G06F19/00
CPC分类号： B24B37/005 , B24B49/105 , B24B49/12
摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
摘要翻译：抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

2. 发明申请

US20070239309A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20070239309A1
公开(公告)日：2007-10-11
申请号：US11730891
申请日：2007-04-04
申请人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
发明人： Mitsuo Tada , Taro Takahashi , Motohiro Niijima , Shinro Ohta , Atsushi Shigeta
IPC分类号： G06F19/00
CPC分类号： B24B37/005 , B24B49/105 , B24B49/12
摘要： A polishing apparatus is used for polishing and planarizing a substrate such as a semiconductor wafer on which a conductive film such as a copper (Cu) layer or a tungsten (W) layer is formed. The polishing apparatus includes a polishing table having a polishing surface, a motor for rotating the polishing table, a top ring for holding a substrate and pressing the substrate against the polishing surface, a film thickness measuring sensor disposed in the polishing table for scanning a surface of the substrate, and a computing device for processing signals of the film thickness measuring sensor to compute a film thickness of the substrate.
摘要翻译：抛光装置用于抛光和平面化诸如形成诸如铜（Cu）层或钨（W）层的导电膜的半导体晶片的衬底。抛光装置包括具有抛光面的研磨台，用于旋转研磨台的马达，用于保持基板并将基板压靠在抛光面上的顶环，设置在抛光台中用于扫描表面的膜厚测量传感器以及用于处理膜厚测量传感器的信号的计算装置，以计算衬底的膜厚度。

3. 发明授权

US06471768B2 Method of and apparatus for growing ribbon of crystal 失效
公开(公告)号：US06471768B2
公开(公告)日：2002-10-29
申请号：US09946518
申请日：2001-09-06
申请人： Kenji Terao , Hideyuki Isozaki , Taro Takahashi , Motohiro Niijima
发明人： Kenji Terao , Hideyuki Isozaki , Taro Takahashi , Motohiro Niijima
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/1044 , Y10T117/1048
摘要： A seed crystal is lowered toward a melt, and a contact between the seed crystal and the melt is detected using an image captured by an imaging device. The temperature of the melt is adjusted to keep a meniscus of the melt in contact with the seed crystal. The temperature of the melt is then lowered to create a wingout extending from the seed crystal. The length and symmetry of the wingout is detected with an image captured by the imaging device, and a ribbon of crystal following the wingout starts to be lifted from the melt.

4. 发明授权

US08454407B2 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US08454407B2
公开(公告)日：2013-06-04
申请号：US12511344
申请日：2009-07-29
申请人： Taro Takahashi , Motohiro Niijima , Akihiko Ogawa
发明人： Taro Takahashi , Motohiro Niijima , Akihiko Ogawa
IPC分类号： B24B49/12
CPC分类号： B24B37/013 , B24B49/105
摘要： A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.
摘要翻译：抛光方法抛光和平坦化基底。将衬底压在旋转的抛光台上的抛光表面上。在抛光期间，抛光台旋转，并且通过设置在抛光台中的涡流传感器扫描基板的抛光表面。监测涡流传感器的输出，并根据涡流传感器输出的变化检测基板损坏。此外，监视通过扫描基板的表面而获得的端点检测传感器的输出，并且根据端点检测传感器的输出的变化来检测抛光终点。在检测到抛光终点之后，监测端点检测传感器或另一传感器的输出，并且检测留在基板的一部分上的膜。

5. 发明申请

US20100035516A1 POLISHING METHOD AND APPARATUS 有权
标题翻译：抛光方法和装置
公开(公告)号：US20100035516A1
公开(公告)日：2010-02-11
申请号：US12511344
申请日：2009-07-29
申请人： Taro TAKAHASHI , Motohiro Niijima , Akihiko Ogawa
发明人： Taro TAKAHASHI , Motohiro Niijima , Akihiko Ogawa
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B49/105
摘要： The present invention relates to a polishing method and apparatus for polishing and planarizing an object to be polished (substrate) such as a semiconductor wafer. The substrate as an object to be polished is pressed against a polishing surface on a rotating polishing table in the polishing method. During polishing of the substrate, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor obtained by scanning the surface, being polished, of the substrate is monitored, and damage of the substrate is detected from a change in the output of the eddy current sensor. Further, an output of an endpoint detecting sensor obtained by scanning the surface, being polished, of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the endpoint detecting sensor or a different sensor is monitored, and monitoring of the remaining film for detecting a film left on a part of the substrate is performed.
摘要翻译：本发明涉及用于抛光和平面化待抛光物体（衬底）如半导体晶片的抛光方法和装置。作为研磨对象的基板在研磨方法中被压靠在旋转研磨台上的研磨面上。在抛光基板期间，旋转抛光台，并且通过设置在抛光台中的涡流传感器来扫描基板的抛光表面。监测通过扫描基板表面而获得的涡流传感器的输出，并根据涡电流传感器的输出的变化来检测基板的损坏。此外，监视通过扫描基板的表面而获得的端点检测传感器的输出，并根据端点检测传感器的输出的变化来检测抛光终点。在检测到抛光终点之后，监视端点检测传感器或不同传感器的输出，并且执行用于检测留在基板的一部分上的膜的剩余膜的监视。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式