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1. 发明授权

US08334204B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08334204B2
公开(公告)日：2012-12-18
申请号：US12220555
申请日：2008-07-24
申请人： Takaaki Matsuoka , Shinji Ide , Yoshiyuki Kikuchi
发明人： Takaaki Matsuoka , Shinji Ide , Yoshiyuki Kikuchi
IPC分类号： H01L21/4763
CPC分类号： H01L21/76834 , H01L21/02115 , H01L21/02167 , H01L21/02274 , H01L21/3146 , H01L21/3148
摘要： The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.
摘要翻译：本发明涉及一种半导体器件的制造方法，该方法包括在基板上形成中间膜的工艺，在中间层中形成开口的工序，填充开口的导电层的形成工序，以及在导电层的表面上形成盖膜的工艺。在形成盖膜的工艺中，同时进行导电层表面的还原处理和膜的形成。

2. 发明授权

US4799170A Method of measuring by coordinate measuring instrument 失效
标题翻译：坐标测量仪测量方法
公开(公告)号：US4799170A
公开(公告)日：1989-01-17
申请号：US841104
申请日：1986-03-18
申请人： Tadao Nakaya , Shinji Ide
发明人： Tadao Nakaya , Shinji Ide
IPC分类号： G01B7/008 , G05B19/401 , G06F15/46 , G01B5/20
CPC分类号： G01B7/008 , G05B19/401 , G05B2219/37021 , G05B2219/37193 , G05B2219/37405
摘要： The present invention relates to a method of measuring by a coordinate measuring instrument. A detecting element is manually moved along a sample of work to be measured in accordance with a predetermined sequence of measuring steps. A moving path of the detecting element is detected by displacement detectors which produce output signals which are inputted to a command unit incorporated in a robot mechanism for storage. Subsequently, a data processing unit gives a command to carry out an automatic measuring sequence, and the robot mechanism is moved along the stored moving path by its drive system, whereby measurement results for dimensions are calculated on the basis of data acquired during the automatic measuring due to the contact between the detecting element and the work and data stored during the manual set-up phase. The detecting element is uncoupled from the drive system of the robot mechanism during the manual set-up phase.
摘要翻译：本发明涉及一种通过坐标测量仪进行测量的方法。根据预定的测量步骤顺序，沿着待测量的工件样品手动地移动检测元件。检测元件的移动路径由位移检测器检测，其产生输入到结合在机器人机构中的命令单元用于存储的输出信号。随后，数据处理单元给出执行自动测量顺序的命令，并且机器人机构通过其驱动系统沿存储的移动路径移动，由此基于在自动测量期间获取的数据来计算尺寸的测量结果由于检测元件与工作之间的接触以及在手动设置阶段存储的数据。在手动设置阶段，检测元件与机器人机构的驱动系统脱离。

3. 发明申请

US20100022048A1 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100022048A1
公开(公告)日：2010-01-28
申请号：US12220555
申请日：2008-07-24
申请人： Takaaki Matsuoka , Shinji Ide , Yoshiyuki Kikuchi
发明人： Takaaki Matsuoka , Shinji Ide , Yoshiyuki Kikuchi
IPC分类号： H01L51/40 , H01L21/44
CPC分类号： H01L21/76834 , H01L21/02115 , H01L21/02167 , H01L21/02274 , H01L21/3146 , H01L21/3148
摘要： The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.
摘要翻译：本发明涉及一种半导体器件的制造方法，该方法包括在基板上形成中间膜的工艺，在中间层中形成开口的工序，填充开口的导电层的形成工序，以及在导电层的表面上形成盖膜的工艺。在形成盖膜的工艺中，同时进行导电层表面的还原处理和膜的形成。

4. 发明申请

US20090053895A1 FILM FORMING METHOD OF POROUS FILM AND COMPUTER-READABLE RECORDING MEDIUM 审中-公开
标题翻译：多孔薄膜成膜方法和计算机可读记录介质
公开(公告)号：US20090053895A1
公开(公告)日：2009-02-26
申请号：US12171952
申请日：2008-07-11
申请人： Yasuhiro OSHIMA , Shinji Ide , Yusaku Kashiwagi , Kotaro Miyatani
发明人： Yasuhiro OSHIMA , Shinji Ide , Yusaku Kashiwagi , Kotaro Miyatani
IPC分类号： H01L21/311
CPC分类号： H01L21/31695 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/31633
摘要： There is provided a method for forming a porous dielectric film stably by: forming a surface densification layer by processing a surface of an SiOCH film formed by a plasma CVD process while using an organic silicon compound source; and releasing CHx groups or OH group from the SiOCH film underneath the surface densification layer by hydrogen plasma processing through the surface densification layer with a controlled rate.
摘要翻译：提供了一种通过以下方法来形成多孔电介质膜的方法：通过在使用有机硅化合物源的同时处理通过等离子体CVD工艺形成的SiOCH膜的表面来形成表面致密化层; 并通过氢等离子体处理，通过表面致密层以受控的速率从表面致密化层下面的SiOCH膜释放CH x基或OH基。

5. 发明申请

US20060154492A1 Forming method of low dielectric constant insulating film of semiconductor device, semiconductor device, and low dielectric constant insulating film forming apparatus 审中-公开
标题翻译：半导体器件，半导体器件和低介电常数绝缘膜形成设备的低介电常数绝缘膜的形成方法
公开(公告)号：US20060154492A1
公开(公告)日：2006-07-13
申请号：US11322318
申请日：2006-01-03
申请人： Shinji Ide , Masaru Sasaki , Satohiko Hoshino
发明人： Shinji Ide , Masaru Sasaki , Satohiko Hoshino
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/0234 , H01L21/3124
摘要： It is an object of the present invention to cure an insulating film of a semiconductor device in a short time while keeping a low dielectric constant. In the present invention, a coating film made of porous MSQ is formed on a substrate, the substrate on which the porous MSQ is formed is placed in a vacuum vessel, and high-density plasma processing at a low electron temperature based on microwave excitation is applied to the coating film by using a plasma substrate processing apparatus, thereby causing an intermolecular dehydration-condensation reaction of hydroxyls in a molecule and another molecule included in the porous MSQ to bond the molecules together, so that a cured insulating film is generated while a low dielectric constant is maintained.
摘要翻译：本发明的目的是在保持低介电常数的同时在短时间内固化半导体器件的绝缘膜。在本发明中，在基板上形成由多孔MSQ制成的涂膜，将形成有多孔质子MSQ的基板放置在真空容器中，基于微波激发的低电子温度的高密度等离子体处理为通过使用等离子体基板处理装置施加到涂膜，从而使分子中的羟基和多孔MSQ中包含的另一个分子的分子间脱水缩合反应将分子结合在一起，从而产生固化的绝缘膜，同时维持低介电常数。

6. 发明授权

US07645481B2 Fabrication of low dielectric constant insulating film 有权
标题翻译：低介电常数绝缘膜的制作
公开(公告)号：US07645481B2
公开(公告)日：2010-01-12
申请号：US10572477
申请日：2004-09-17
申请人： Masaru Sasaki , Satohiko Hoshino , Shinji Ide , Yusaku Kashiwagi
发明人： Masaru Sasaki , Satohiko Hoshino , Shinji Ide , Yusaku Kashiwagi
IPC分类号： C23C16/00 , C04B41/00 , C30B28/12 , C30B17/00
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.
摘要翻译：本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。将含有氢原子的工艺气体供给到反应容器中。将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。通过径向天线将微波提供给反应容器。

7. 发明申请

US20090152686A1 Film Forming Method for Dielectric Film 有权
标题翻译：电介质膜成膜方法
公开(公告)号：US20090152686A1
公开(公告)日：2009-06-18
申请号：US12086030
申请日：2006-12-05
申请人： Shinji Ide , Yasuhiro Oshima , Yusaku Kashiwagi
发明人： Shinji Ide , Yasuhiro Oshima , Yusaku Kashiwagi
IPC分类号： H01L23/58 , H01L21/47 , C23C16/52
CPC分类号： H01L23/5329 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/31633 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L23/53223 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
摘要翻译：本发明是一种SiOCH膜的成膜方法，包括：单位成膜步骤，包括：通过使用有机硅化合物作为原料沉积SiOCH膜元素并通过使用等离子体CVD法沉积步骤; 以及向沉积的SiOCH膜元件提供氢等离子体处理的氢等离子体处理步骤，其中重复数次单元成膜步骤，以在基板上形成SiOCH膜。

8. 发明申请

US20050005844A1 Process and apparatus for forming oxide film, and electronic device material 审中-公开
标题翻译：用于形成氧化膜的方法和设备以及电子器件材料
公开(公告)号：US20050005844A1
公开(公告)日：2005-01-13
申请号：US10849883
申请日：2004-05-21
申请人： Junichi Kitagawa , Shinji Ide , Shigenori Ozaki
发明人： Junichi Kitagawa , Shinji Ide , Shigenori Ozaki
IPC分类号： H01L21/76 , H01J37/32 , H01L21/31 , H01L21/316 , C23C16/00
CPC分类号： H01L21/02238 , H01J37/32192 , H01L21/02164 , H01L21/31662
摘要： An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.
摘要翻译：一种氧化膜形成装置，包括：处理室，用于将电子器件基板设置在预定位置; 用于将水蒸汽供应到处理室中的水蒸气供应装置; 以及用于用等离子体激活水蒸气的等离子体激发装置，由此可以基于水蒸气照射等离子体的电子器件基板的表面。

9. 发明申请

US20100132613A1 FABRICATION OF LOW DIELECTRIC CONSTANT INSULATING FILM 审中-公开
标题翻译：低介电常数绝缘膜的制造
公开(公告)号：US20100132613A1
公开(公告)日：2010-06-03
申请号：US12628397
申请日：2009-12-01
申请人： Masaru SASAKI , Satohiko HOSHINO , Shinji IDE , Yusaku KASHIWAGI
发明人： Masaru SASAKI , Satohiko HOSHINO , Shinji IDE , Yusaku KASHIWAGI
IPC分类号： B05C11/00
CPC分类号： H01L21/31695 , C23C16/401 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3003 , H01L21/31058 , H01L21/3121 , H01L21/31633
摘要： The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.
摘要翻译：本发明涉及通过化学气相沉积工艺形成的包括Si，O和CH的绝缘膜的介电常数降低的方法。将含有氢原子的工艺气体供给到反应容器中。将微波引入反应容器中以提供均匀的电磁波，从而在反应容器中产生含有氢自由基的等离子体。绝缘膜的结构被照射到绝缘膜上的等离子体中所含的氢原子改性，降低了膜的介电常数。通过径向天线将微波提供给反应容器。

10. 发明授权

US07713864B2 Method of cleaning semiconductor substrate conductive layer surface 有权
标题翻译：半导体衬底导电层表面的清洗方法
公开(公告)号：US07713864B2
公开(公告)日：2010-05-11
申请号：US10581601
申请日：2004-12-03
申请人： Masaru Sasaki , Shinji Ide , Shigenori Ozaki
发明人： Masaru Sasaki , Shinji Ide , Shigenori Ozaki
IPC分类号： H01L21/322 , H01L21/4763
CPC分类号： H01L21/02063 , H01J2237/335 , H01L21/02068 , H01L21/76814 , H01L21/76838
摘要： A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.
摘要翻译：一种清洁可以令人满意地除去残留的有机材料和天然氧化物的半导体衬底导电层表面的方法，并且不损害k值而不损坏通孔的侧壁绝缘膜。包括形成在半导体衬底的导电层的表面上的绝缘膜和形成在绝缘膜中以部分地暴露导电层的通孔的半导体器件被携带到反应容器中，在反应中产生包括氢的等离子体容器清洁通孔底部的导电层的表面，残留的有机材料通过灰化分解和除去，导电层表面上的氧化铜膜被还原为Cu。

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