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1. 发明授权

US08143623B2 Thin film transistor and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08143623B2
公开(公告)日：2012-03-27
申请号：US12686357
申请日：2010-01-12
申请人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
发明人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L21/28282 , H01L21/84 , H01L27/11568 , H01L27/1203 , H01L29/4234 , H01L29/42392 , H01L29/4908 , H01L29/6675 , H01L29/66833 , H01L29/792
摘要： A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.
摘要翻译：提供薄膜晶体管及其制造方法。在基板上形成具有至少一个突起的绝缘图案层。之后，绝缘图案层上形成有至少一个间隔物和多个彼此分离的非晶半导体图案。间隔件形成在突起的一侧并连接在非晶半导体图案之间。之后，间隔物和非晶半导体图案结晶。随后，去除间隔物下面的突起和绝缘图案层，使得形成具有多个拐角的束结构并悬浮在基底上。然后，顺序地形成载流子隧道层，载流子俘获层和载流子阻挡层，从而柔顺包裹梁结构的角部。此后，在基板上形成栅极以覆盖光束结构并包裹载流子阻挡层。

2. 发明授权

US07249275B2 Clock generating device and method for executing overclocking operation 失效
标题翻译：用于执行超频操作的时钟产生装置和方法
公开(公告)号：US07249275B2
公开(公告)日：2007-07-24
申请号：US10933896
申请日：2004-09-03
申请人： Wen-Shiung Weng , Chi-Kung Kuan , Sheng-Kai Chen , Ming-Chun Chang , Yi-Shu Chang
发明人： Wen-Shiung Weng , Chi-Kung Kuan , Sheng-Kai Chen , Ming-Chun Chang , Yi-Shu Chang
IPC分类号： G06F1/10
CPC分类号： G06F1/08
摘要： A clock tuning device and method for executing overclocking operations on plural elements disposed on a motherboard. The clock tuning device includes a phase-locked loop for outputting a plurality of clock signals to the elements, and a control circuit for controlling the phase-locked loop to adjust the frequencies of the clock signals, so as to execute the overclocking operations on the elements, respectively. The method includes the steps of: increasing the frequency of a first clock signal until one of the elements can't work normally due to an utmost frequency of the first clock signal; resetting all the elements and operating the element corresponding to the first signal according to a safe frequency of the first clock signal; and repeating the above steps to perform overclocking operation on each of the other elements.
摘要翻译：一种用于对设置在母板上的多个元件执行超频操作的时钟调谐装置和方法。时钟调谐装置包括用于向元件输出多个时钟信号的锁相环，以及用于控制锁相环以调整时钟信号的频率的控制电路，以便对该时钟信号执行超频操作元素。该方法包括以下步骤：增加第一时钟信号的频率，直到其中一个元件由于第一时钟信号的最大频率而不能正常工作; 根据第一时钟信号的安全频率，复位所有元件并对与第一信号相对应的元件进行操作; 并重复上述步骤对每个其他元件执行超频操作。

3. 发明授权

US07236022B2 Device and method for setting an initial value 有权
标题翻译：用于设置初始值的设备和方法
公开(公告)号：US07236022B2
公开(公告)日：2007-06-26
申请号：US11000983
申请日：2004-12-02
申请人： Kuo-Lin Tai , Johnson Yang , Sheng-Kai Chen
发明人： Kuo-Lin Tai , Johnson Yang , Sheng-Kai Chen
IPC分类号： H03L7/00
CPC分类号： G11C29/028 , G06F1/06 , G06F1/08 , G11C29/56012
摘要： A device and a method for setting an initial value of a control chip. The device includes a setting unit, which is disposed outside the control chip and provides a setting signal, and a decoder, which is disposed inside the control chip, receives the setting signal, and generates a selecting signal according to the setting signal. The control chip obtains the initial value according to the selecting signal.
摘要翻译：一种用于设置控制芯片的初始值的装置和方法。该设备包括设置在控制芯片外部并提供设置信号的设置单元，并且设置在控制芯片内部的解码器接收设置信号，并根据设置信号产生选择信号。控制芯片根据选择信号获得初始值。

4. 发明申请

US20110084283A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110084283A1
公开(公告)日：2011-04-14
申请号：US12686357
申请日：2010-01-12
申请人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
发明人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L21/28282 , H01L21/84 , H01L27/11568 , H01L27/1203 , H01L29/4234 , H01L29/42392 , H01L29/4908 , H01L29/6675 , H01L29/66833 , H01L29/792
摘要： A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.
摘要翻译：提供薄膜晶体管及其制造方法。在基板上形成具有至少一个突起的绝缘图案层。之后，绝缘图案层上形成有至少一个间隔物和多个彼此分离的非晶半导体图案。间隔件形成在突起的一侧并连接在非晶半导体图案之间。之后，间隔物和非晶半导体图案结晶。随后，去除间隔物下面的突起和绝缘图案层，使得形成具有多个拐角的束结构并悬浮在基底上。然后，顺序地形成载流子隧道层，载流子俘获层和载流子阻挡层，从而柔顺包裹梁结构的角部。此后，在基板上形成栅极以覆盖光束结构并包裹载流子阻挡层。

5. 发明申请

US20050162205A1 Device and method for setting an initial value 有权
标题翻译：用于设置初始值的设备和方法
公开(公告)号：US20050162205A1
公开(公告)日：2005-07-28
申请号：US11000983
申请日：2004-12-02
申请人： Kuo-Lin Tai , Johnson Yang , Sheng-Kai Chen
发明人： Kuo-Lin Tai , Johnson Yang , Sheng-Kai Chen
IPC分类号： G06F1/06 , G06F1/08 , G11C5/00 , G11C8/00 , H03K3/84
CPC分类号： G11C29/028 , G06F1/06 , G06F1/08 , G11C29/56012
摘要： A device and a method for setting an initial value of a control chip. The device includes a setting unit, which is disposed outside the control chip and provides a setting signal, and a decoder, which is disposed inside the control chip, receives the setting signal, and generates a selecting signal according to the setting signal. The control chip obtains the initial value according to the selecting signal.
摘要翻译：一种用于设置控制芯片的初始值的装置和方法。该设备包括设置在控制芯片外部并提供设置信号的设置单元，并且设置在控制芯片内部的解码器接收设置信号，并根据设置信号产生选择信号。控制芯片根据选择信号获得初始值。

6. 发明申请

US20050055597A1 Clock tuning device and method 失效
标题翻译：时钟调谐装置及方法
公开(公告)号：US20050055597A1
公开(公告)日：2005-03-10
申请号：US10933896
申请日：2004-09-03
申请人： Wen-Shiung Weng , Chi-Kung Kuan , Sheng-Kai Chen , Ming-Chun Chang , Yi-Shu Chang
发明人： Wen-Shiung Weng , Chi-Kung Kuan , Sheng-Kai Chen , Ming-Chun Chang , Yi-Shu Chang
IPC分类号： G06F1/04 , G06F1/08
CPC分类号： G06F1/08
摘要： A clock tuning device and method for executing overclocking operations on plural elements disposed on a motherboard. The clock tuning device includes a phase-locked loop for outputting a plurality of clock signals to the elements, and a control circuit for controlling the phase-locked loop to adjust the frequencies of the clock signals, so as to execute the overclocking operations on the elements, respectively. The method includes the steps of: increasing the frequency of a first clock signal until one of the elements can't work normally due to an utmost frequency of the first clock signal; resetting all the elements and operating the element corresponding to the first signal according to a safe frequency of the first clock signal; and repeating the above steps to perform overclocking operation on each of the other elements.
摘要翻译：一种用于对设置在母板上的多个元件执行超频操作的时钟调谐装置和方法。时钟调谐装置包括用于向元件输出多个时钟信号的锁相环，以及用于控制锁相环以调整时钟信号的频率的控制电路，以便对该时钟信号执行超频操作元素。该方法包括以下步骤：增加第一时钟信号的频率，直到其中一个元件由于第一时钟信号的最大频率而不能正常工作; 根据第一时钟信号的安全频率，复位所有元件并对与第一信号相对应的元件进行操作; 并重复上述步骤对每个其他元件执行超频操作。

7. 发明授权

US08247277B2 Manufacturing method of a thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US08247277B2
公开(公告)日：2012-08-21
申请号：US13366269
申请日：2012-02-04
申请人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
发明人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78696 , H01L21/28282 , H01L21/84 , H01L27/11568 , H01L27/1203 , H01L29/4234 , H01L29/42392 , H01L29/4908 , H01L29/6675 , H01L29/66833 , H01L29/792
摘要： A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.
摘要翻译：提供了薄膜晶体管的制造方法。在基板上形成具有至少一个突起的绝缘图案层。在绝缘图案层上形成有至少一个间隔物和彼此分离的多个非晶半导体图案。间隔件形成在突起的一侧并连接在非晶半导体图案之间。间隔物和非晶半导体图案结晶。去除间隔物下面的突起和绝缘图案层，从而形成具有多个拐角的束结构并悬挂在基底上。顺序地形成载流子隧道层，载流子俘获层和载流子阻挡层，以柔顺包裹波束结构的角部。此后，在基板上形成栅极以覆盖光束结构并包裹载流子阻挡层。

8. 发明申请

US20120135571A1 MANUFACTURING METHOD OF A THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US20120135571A1
公开(公告)日：2012-05-31
申请号：US13366269
申请日：2012-02-04
申请人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
发明人： Huang-Chung Cheng , Ta-Chuan Liao , Sheng-Kai Chen , Ying-Hui Chen , Chi-Neng Mo
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L21/28282 , H01L21/84 , H01L27/11568 , H01L27/1203 , H01L29/4234 , H01L29/42392 , H01L29/4908 , H01L29/6675 , H01L29/66833 , H01L29/792
摘要： A manufacturing method of a thin film transistor is provided. An insulating pattern layer having at least one protrusion is formed on a substrate. At least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. The spacer and the amorphous semiconductor patterns are crystallized. The protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. A carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.
摘要翻译：提供了薄膜晶体管的制造方法。在基板上形成具有至少一个突起的绝缘图案层。在绝缘图案层上形成有至少一个间隔物和彼此分离的多个非晶半导体图案。间隔件形成在突起的一侧并连接在非晶半导体图案之间。间隔物和非晶半导体图案结晶。去除间隔物下面的突起和绝缘图案层，从而形成具有多个拐角的束结构并悬挂在基底上。顺序地形成载流子隧道层，载流子俘获层和载流子阻挡层，以柔顺包裹波束结构的角部。此后，在基板上形成栅极以覆盖光束结构并包裹载流子阻挡层。

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